电负性气体的掺入对容性耦合Ar等离子体的影响

洪布双; 苑涛; 邹帅; 唐中华; 徐东升; 虞一青; 王栩生; 辛煜

doi:10.7498/aps.62.115202

摘要

本文利用朗缪尔静电探针对掺入了电负性气体O2, Cl2, SF6的由4068 MHz激发的单射频容性耦合Ar等离子体进行了诊断测量. 测量结果表明: 随着电负性气体流量的增加, 电子能量概率分布函数出现了高能峰, 高能峰且有向高能侧漂移的现象; 电负性气体掺入Ar等离子体后显著降低了等离子体的电子密度; 电子温度随着电负性气体流量比的增加而升高. 另外, 本文还测量了掺入三种电负性气体后在不同流量比下的混合气体等离子体的电负度α . 对实验现象进行了初步的解释.

关键词:

Abstract

Investigation of electronegative plasmas has now been atrractive due to the advantages of negative-ion assisted etching and charge-free ion implantation in semiconductor manufacture. Langmuir electrostatic probe, as a simple, inexpensive and good spatial resolution diagnosic tool, is popularly used in investigating electronegative plasmas. In this paper, the Langmuir electrostatic probe is proposed to measure the capacitively coupled Ar plasmas with added electronegative gases, such as O2, Cl2 and SF6. The experimental results from the measurements of Ar plasmas with added electronegative gases driven by a 40.68 MHz field indicate that, with increasing flow rate of electronegative gas, high energy peak will occur in electron energy possibility function and shift towards higher energyside. The addition of electronegative gases reduces the electron density significantly as the electron temperature increases. We also calculate the electronegativity of Ar plasmas for the three kinds of electronegative gases. The preliminary interpretations of the above experimental phenomena are presented.

Keywords:

作者及机构信息

1.
苏州大学物理科学与技术学院, 江苏省薄膜材料重点实验室, 苏州 215006;

2.
苏州阿特斯阳光电力科技有限公司, 苏州 215011

基金项目: 国家自然科学基金(批准号: 11175127)资助的课题.

Authors and contacts

1.
Provincial Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;

2.
Canadian Solar Inc. Suzhou 215011, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11175127).

参考文献

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[2]	Stoffels E, Stoffels W W, Kroesen G M W 2001 Plasma sources Sci. Technol. 10 311
[3]	Crespo R M, Palop J I F, Hernández M A, Del Pino S B, Díaz-Cabrera J M, Ballesteros J 2006 J. App. Phys. 99 053303
[4]	Doucet H J 1970 Phys. Lett. 33 A 283
[5]	Sheridan T E 1999 J. phys. D: Appl. Phys. 32 1761
[6]	Chabert P, Sheridan T E, Boswell R W, Perrin J 1999 Plasma Sources Sci. Technol. 8 561
[7]	Boyd R L F, Thompson J B 1959 Proc. R. Soc. A 252 102
[8]	Shindo M, Uchino S, Lchiki R, Yoshimura S, Kawai Y 2001 Rev. Sci. Instrum. 72 2288
[9]	Chung T H, Shin Y M, Seo D C 2006 Contrib. Plasma Phys. 46 348
[10]	Joh H M, Chung T H, Chung K S 2010 Thin Solid Films 518 6686
[11]	Conway J, Sirse N, Karkari S K, Turner M M 2010 Plasma Sources Sci. Technol. 19 065002
[12]	Draghici M, Stamate E 2010 J. Phys. D: Appl. Phys. 43 155205
[13]	Stenzel R L 1976 Rev. Sci. Instrum. 47 603
[14]	Piejak R B, Godyak V A, Garner R, Alexandrovich B M 2004 J. App. Phys. 95 3785
[15]	Piejak R B, Al Kuzee J, Braithwaite N S J 2005 Plasma Sources Sci. Technol. 14 734
[16]	Sun K, Xin Y, Huang X J, Yuan Q H, Ning Z Y 2008 Acta Phys. Sin. 57 6465 [孙恺, 辛煜, 黄晓江, 袁强华, 宁兆元 2008 57 6465]
[17]	Schwabedissen A, Benck E C, Roberts J R 1998 Plasma Sources Sci. Technol. 7 119
[18]	Malyshev M V, Fuller N C M, Bogart K H A, Donnelly V M 2000 J. Appl. Phys. 105 113307
[19]	Tuszewski M, White R R 2002 Plasma Sources Sci. Technol. 11 338
[20]	Zhou S, Tang Z H, Ji L L, Su X D, Xin Y 2012 Acta. Phys. Sin 61 075204 [邹帅, 唐中华, 吉亮亮, 苏晓东, 辛煜 2012 61 075204]
[21]	Malyshev M V, Donnelly V M 2000 J. Appl. Phys. 87 1642
[22]	Wang Z, Lichtenberg A J, Cohen R H 1998 Plasma Source Sci. Technol. 8 151
[23]	Lallement L, Rhallabi A, Cardinaud C, Peignon-Fernandez M C, Alves L L 2009 Plasma Sources Sci. Technol. 18 025001
[24]	Noguchi M, Hirao T, Shindo T H, Sakurauchi K, Yamagata Y, Uchino K, Kawai Y, Muraoka K 2003 Plasma Sources Sci. Technol. 12 403
[25]	Franklin R N 2002 Plasma Sources Sci. Technol. 11 A31
[26]	Stoffels E, Stofeels W W, Vender D, Kando M, Kroesen G M W, Hoog F J 1995 Phys. Rev. E 51 2435
[27]	Katsch H M, Strum T, Quandt E, Dobele H F 2000 Plasma sources Sci. Technol. 9 323
[28]	Passchier J P P, Goedheer W J 1993 J. Appl. Phys. 73 1073
[29]	Lichtenberg A J, Kouznetsov I G, Lee Y T, Lieberman M A, Kaganovich I D, Tsendin L D 1997 Plasma Sources Sci. Technol. 6 437

施引文献

[1]	Samukawa S, Mieno T 1996 Plasma sources Sci. Technol. 5 132
[2]	Stoffels E, Stoffels W W, Kroesen G M W 2001 Plasma sources Sci. Technol. 10 311
[3]	Crespo R M, Palop J I F, Hernández M A, Del Pino S B, Díaz-Cabrera J M, Ballesteros J 2006 J. App. Phys. 99 053303
[4]	Doucet H J 1970 Phys. Lett. 33 A 283
[5]	Sheridan T E 1999 J. phys. D: Appl. Phys. 32 1761
[6]	Chabert P, Sheridan T E, Boswell R W, Perrin J 1999 Plasma Sources Sci. Technol. 8 561
[7]	Boyd R L F, Thompson J B 1959 Proc. R. Soc. A 252 102
[8]	Shindo M, Uchino S, Lchiki R, Yoshimura S, Kawai Y 2001 Rev. Sci. Instrum. 72 2288
[9]	Chung T H, Shin Y M, Seo D C 2006 Contrib. Plasma Phys. 46 348
[10]	Joh H M, Chung T H, Chung K S 2010 Thin Solid Films 518 6686
[11]	Conway J, Sirse N, Karkari S K, Turner M M 2010 Plasma Sources Sci. Technol. 19 065002
[12]	Draghici M, Stamate E 2010 J. Phys. D: Appl. Phys. 43 155205
[13]	Stenzel R L 1976 Rev. Sci. Instrum. 47 603
[14]	Piejak R B, Godyak V A, Garner R, Alexandrovich B M 2004 J. App. Phys. 95 3785
[15]	Piejak R B, Al Kuzee J, Braithwaite N S J 2005 Plasma Sources Sci. Technol. 14 734
[16]	Sun K, Xin Y, Huang X J, Yuan Q H, Ning Z Y 2008 Acta Phys. Sin. 57 6465 [孙恺, 辛煜, 黄晓江, 袁强华, 宁兆元 2008 57 6465]
[17]	Schwabedissen A, Benck E C, Roberts J R 1998 Plasma Sources Sci. Technol. 7 119
[18]	Malyshev M V, Fuller N C M, Bogart K H A, Donnelly V M 2000 J. Appl. Phys. 105 113307
[19]	Tuszewski M, White R R 2002 Plasma Sources Sci. Technol. 11 338
[20]	Zhou S, Tang Z H, Ji L L, Su X D, Xin Y 2012 Acta. Phys. Sin 61 075204 [邹帅, 唐中华, 吉亮亮, 苏晓东, 辛煜 2012 61 075204]
[21]	Malyshev M V, Donnelly V M 2000 J. Appl. Phys. 87 1642
[22]	Wang Z, Lichtenberg A J, Cohen R H 1998 Plasma Source Sci. Technol. 8 151
[23]	Lallement L, Rhallabi A, Cardinaud C, Peignon-Fernandez M C, Alves L L 2009 Plasma Sources Sci. Technol. 18 025001
[24]	Noguchi M, Hirao T, Shindo T H, Sakurauchi K, Yamagata Y, Uchino K, Kawai Y, Muraoka K 2003 Plasma Sources Sci. Technol. 12 403
[25]	Franklin R N 2002 Plasma Sources Sci. Technol. 11 A31
[26]	Stoffels E, Stofeels W W, Vender D, Kando M, Kroesen G M W, Hoog F J 1995 Phys. Rev. E 51 2435
[27]	Katsch H M, Strum T, Quandt E, Dobele H F 2000 Plasma sources Sci. Technol. 9 323
[28]	Passchier J P P, Goedheer W J 1993 J. Appl. Phys. 73 1073
[29]	Lichtenberg A J, Kouznetsov I G, Lee Y T, Lieberman M A, Kaganovich I D, Tsendin L D 1997 Plasma Sources Sci. Technol. 6 437

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