静电力显微镜研究二相材料及其界面介电特性

孙志; 王暄; 韩柏; 宋伟; 张冬; 郭翔宇; 雷清泉

doi:10.7498/aps.62.030703

摘要

利用静电力显微镜(EFM)研究了二相材料不同区域的介电特性. 制备了高定向石墨/聚乙烯、云母/聚乙烯等层叠状二相材料复合物, 在EFM相位检测模式下观测二相材料过渡界面处, 可以发现二相材料中介电常数较大的材料会引起较大的相位滞后角Δθ该相位滞后角正切值tan(Δθ) 与探针电压VEFM存在二次函数关系, 且函数二次项系数与样品的介电常数存在增函数关系, 进而可在微纳米尺度下区分不同微区域内材料的介电常数差异. 研究表明EFM 可用于对材料介电特性的微纳米尺度测量, 这对分析复合材料二相界面区域特性有积极意义.

关键词:

Abstract

Dielectric property of two-phase stack-up sample is studied by electric force microscopy (EFM). Highly oriented pyrolytic graphite (HOPG)/polyethylene(PE) and mica/PE are fabricated. The phenomenon that phase shift (Δθ) of conducting probe varys with dielectric constant of material is discovered near the interface between the two materials by using phase detection EFM. The characteristic curves of tan(Δθ) versus tip voltage VEFM are of parabolic type. Quadratic coefficient increases with dielectric constant ε increasing. An approach to the qualitative analysis of the dielectric property near the interface between different material at the micro/nanometer scale, is provided in this paper.

Keywords:

作者及机构信息

1.
哈尔滨理工大学电气与电子工程学院, 黑龙江省电介质工程国家重点实验室培育基地, 工程电介质及其应用教育部重点实验室, 哈尔滨 150080

基金项目: 国家重点基础研究发展计划 (批准号: 2009CB724505)、国家自然科学基金 (批准号: 5097702)、黑龙江省电介质工程国家重点实验室培育基地前沿项目预研基金 (批准号: DE2012B07)和哈尔滨理工大学青年科学研究基金(批准号: 2011YF013)资助的课题.

Authors and contacts

1.
College of Electrical and Electronic Engineer, Harbin University of Science and Technology, State Key Laboratory Breeding Base of Dielectrics Engineering, Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin 150080, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2009CB724505), the National Natural Science Foundation of China (Grant No. 5097702), State Key Laboratory Breeding Base of Dielectrics Engineering, China (Grant No. DE2012B07) and Harbin University of Science and Technology Science Foundation for Youths, China (Grant No. 2011YF013).

参考文献

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[25]	Zhao H B, Han L 2008 Nanotechnology & Precision Engineering 6 89 (in Chinese) [赵慧斌, 韩立 2008 纳米技术与精密工程 6 89]
[26]	Qi G C, Yang Y L, Yan H, Guan L, Li Y B, Qiu X H, Wang C 2009 J. Phys. Chem. C 113 204
[27]	Qi G C, Yan H, Guan L, Yang Y L, Qiu X H, Wang C, Li Y B, Jiang Y P 2008 J. Appl. Phys. 103 114311
[28]	Zhang D D, Wang R, Jiang Y P, Qi G C, Wang C, Qiu X H 2011 Physics 40 573 (in Chinese) [张冬冬, 王锐, 蒋烨平, 戚桂村, 王琛, 裘晓辉 2011 物理 40 573]
[29]	Piarristeguy A A, Ramonda M, Pradel A 2010 J. Non-Cryst. Solids. 356 2402
[30]	Mesa G, Dobado Fuentes E, Sáenz J J 1996 J. Appl. Phys. 79 39
[31]	Kazuya G, Kazuhiro H 1998 J. Appl. Phys. 84 4043

施引文献

[1]	Kao K C, Hwang W 1981 Electrical Transport in Solid (Oxford: Pergamon Press) p168
[2]	Zhang P H, Fan Y, Wang F C, Xie H, Li G, Lei Q Q 2005 Chin. Phys. Lett. 22 1253
[3]	Li S T, Cheng P F, Zhao L, Li J Y 2012 Acta. Phys. Sin. 58 523 (in Chinese) [李盛涛, 成鹏飞, 赵雷, 李建英 2009 58 523]
[4]	Cheng P F, Li S T, Li J Y 2012 Acta. Phys. Sin. 61 187302 (in Chinese) [成鹏飞, 李盛涛, 李建英 2012 61 187302]
[5]	Holger S, Julius G V 2010 Scanning Force Microscopy of Polymers (Deutschland: Springer Press) p10
[6]	Lei Q Q, Fan Y, Wang X 2006 Trans China Electrotechnical Soc 21 1 (in Chinese) [雷清泉, 范勇, 王暄 2006 电工技术学报 21 1]
[7]	Belaidi S, Girard P, Leveque G 1997 J. Appl. Phys. 81 1023
[8]	Yves M, David W A, Kumar H W 1988 Appl. Phys. Lett. 52 1103
[9]	Paula M V, Yossi R, Angus K 2005 Scanning Probe Microscopy: Characterization, Nanofabrication, and Device Application of Functional Materials (Netherlands: Kluwer Academic Publishers) p289
[10]	Jones J T, Bridger P M, Marsh O J, McGill T C 1999 Appl. Phys. Lett. 75 1326
[11]	Marchi F, Dianoux R, Smilde H J H, Mur P, Comin F, Chevrier J 2008 J. Electrostat. 66 538
[12]	Zhu Y F, Xu C H, Wang B, Woo C H 2005 Comp. Mater. Sci. 33 53
[13]	Jeandupeux O, Marsico V, Acovic A, Fazan P, Brune H 2002 Microelectron Reliab. 42 225
[14]	Okur S, Yakuphanoglu F 2009 Sensor Actuat A Phys. 149 241
[15]	Benstetter G, Biberger R, Liu D P 2009 Thin Solid Films 517 5100
[16]	Doukkali A, Ledain S, Guasch C, Bonnet J 2004 Appl. Sur. Sci. 235 507
[17]	Albrecht V, Janke A, Drechsler, Schubert G, Németh E, Simon F 2006 Progr Colloid Polym. Sci. 132 48
[18]	Riedel C, Arinero R, Tordjeman P 2009 J. Appl. Phys. 106 024315
[19]	Riedel C, Schwartz G A, Arinero R 2010 Ultramicroscopy 110 634
[20]	Krayev A V, Talroze R V 2004 Polymer 45 8195
[21]	Krayev A V, Shandryuk G A, Grigorov L N, Talroze R V 2006 Macromol. Chem. Phys. 207 966
[22]	Lewis T J 1994 IEEE Tran. Dielect. El. In. 1 812
[23]	Lewis T J. 2004 IEEE Tran. Dielect. El. In. 11 739
[24]	Tanaka T, Kozako M, Fuse M, Ohki Y 2004 IEEE Tran. Dielect. El. In. 12 669
[25]	Zhao H B, Han L 2008 Nanotechnology & Precision Engineering 6 89 (in Chinese) [赵慧斌, 韩立 2008 纳米技术与精密工程 6 89]
[26]	Qi G C, Yang Y L, Yan H, Guan L, Li Y B, Qiu X H, Wang C 2009 J. Phys. Chem. C 113 204
[27]	Qi G C, Yan H, Guan L, Yang Y L, Qiu X H, Wang C, Li Y B, Jiang Y P 2008 J. Appl. Phys. 103 114311
[28]	Zhang D D, Wang R, Jiang Y P, Qi G C, Wang C, Qiu X H 2011 Physics 40 573 (in Chinese) [张冬冬, 王锐, 蒋烨平, 戚桂村, 王琛, 裘晓辉 2011 物理 40 573]
[29]	Piarristeguy A A, Ramonda M, Pradel A 2010 J. Non-Cryst. Solids. 356 2402
[30]	Mesa G, Dobado Fuentes E, Sáenz J J 1996 J. Appl. Phys. 79 39
[31]	Kazuya G, Kazuhiro H 1998 J. Appl. Phys. 84 4043

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