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The temperature distribution in the cell of single crystal diamond grown by the temperature gradient method has been studied, which is based on the finite element method. Our results shwo that the temperature distribution in the synthetic process of single crystal diamond is not uniform. The highest temperature in the cell is located at the outside of single carbon solvent, and the lowest temperature in the cell is located near the diamond seed. The heat transfer and the mass transport have a same direction （from outside of carbon source to diamond seed）. The temperature gradient in the axial direction is higher than that in the radial direction, which explains why the size of synthetic single crystal diamond in the axial direction is larger than that in the radial direction. The model will be useful for the design of single crystal diamond grown by the temperature gradient method. Furthermore, this work will be hopeful to improve the cubic anvil type high pressure techniques for the synthesis of high quality diamond crystals.
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Keywords:
- cell /
- temperature field /
- single crystal diamond /
- finite element method
[1] ［1］Sumiya H, Satoh S 1996 Diamond and Related Materials 5 1359
[2] ［2］Abbaschian Reza, Zhu Henry, Clarke Carter 2005 Diamond and Related Materials 14 1916
[3] ［3］Sumiya H, Nakamoto Y, Shimizu K, Kanda H 2008 Applied Physics Letters 93 1101915
[4] ［4］Wang J H, He D W 2008 Acta Phys. Sin. 57 3397 （in Chinese）［王江华、贺端威 2008 57 3397］
[5] ［5］Zhou Z Y, Chen G C, Tang W Z, Lu F X 2006 Chin. Phys. 15 980
[6] ［6］Luo J F, Tang B C, Gao C X, Li M, Han Y H, Zou G T 2005 Chin. Phys. 14 1770
[7] ［7］Liu S C, Wang L J, Cheng X R, Sun G X, Li J L, Hu X D, Shen Z T 1977 Acta Phys. Sin. 26 363 （in Chinese）［刘世超、 王莉君、 成向荣、 孙帼显、 李家璘、 胡欣德、 沈主同 1977 26 363］
[8] ［8］Pan B C, Xia S D 1993 Acta Phys. Sin. 42 320 （in Chinese）［潘必才、夏上达 1993 42 320］
[9] ［9］Liu F B, Wang J D, Chen D R, Yan D Y 2009 Chin. Phys. B 18 2041
[10] ［10 ］Strong H M, Chrenko R M 1971 J. Phys. Chem. 75 1838
[11] ］ Sumiya H, Satoh S 1996 Diamond and Related Materials 5 1359
[12] ］ Burns R C, Hansen J O, Spits R A, Sibanda M, Welbourn C M, Welch D L 1999 Diamond and Related Materials 8 1433
[13] ］Cheng Y, Huang Q J, Liu X J 2008 Chin. Phys. B 17 4273
[14] ］Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Grace Zhang, Phillip Bex 2002 J. Phys: Condens. Matter 14 11269
[15] ］Han Q G, Jia X P, Ma H A, Li R, Zhang C, Li Z C, Tian Y 2009 Acta Phys. Sin. 58 4812 （in Chinese）［韩奇钢、贾晓鹏、马红安、李瑞、张聪、李占厂、田宇 2009 58 4812］
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[1] ［1］Sumiya H, Satoh S 1996 Diamond and Related Materials 5 1359
[2] ［2］Abbaschian Reza, Zhu Henry, Clarke Carter 2005 Diamond and Related Materials 14 1916
[3] ［3］Sumiya H, Nakamoto Y, Shimizu K, Kanda H 2008 Applied Physics Letters 93 1101915
[4] ［4］Wang J H, He D W 2008 Acta Phys. Sin. 57 3397 （in Chinese）［王江华、贺端威 2008 57 3397］
[5] ［5］Zhou Z Y, Chen G C, Tang W Z, Lu F X 2006 Chin. Phys. 15 980
[6] ［6］Luo J F, Tang B C, Gao C X, Li M, Han Y H, Zou G T 2005 Chin. Phys. 14 1770
[7] ［7］Liu S C, Wang L J, Cheng X R, Sun G X, Li J L, Hu X D, Shen Z T 1977 Acta Phys. Sin. 26 363 （in Chinese）［刘世超、 王莉君、 成向荣、 孙帼显、 李家璘、 胡欣德、 沈主同 1977 26 363］
[8] ［8］Pan B C, Xia S D 1993 Acta Phys. Sin. 42 320 （in Chinese）［潘必才、夏上达 1993 42 320］
[9] ［9］Liu F B, Wang J D, Chen D R, Yan D Y 2009 Chin. Phys. B 18 2041
[10] ［10 ］Strong H M, Chrenko R M 1971 J. Phys. Chem. 75 1838
[11] ］ Sumiya H, Satoh S 1996 Diamond and Related Materials 5 1359
[12] ］ Burns R C, Hansen J O, Spits R A, Sibanda M, Welbourn C M, Welch D L 1999 Diamond and Related Materials 8 1433
[13] ］Cheng Y, Huang Q J, Liu X J 2008 Chin. Phys. B 17 4273
[14] ］Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Grace Zhang, Phillip Bex 2002 J. Phys: Condens. Matter 14 11269
[15] ］Han Q G, Jia X P, Ma H A, Li R, Zhang C, Li Z C, Tian Y 2009 Acta Phys. Sin. 58 4812 （in Chinese）［韩奇钢、贾晓鹏、马红安、李瑞、张聪、李占厂、田宇 2009 58 4812］
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