多壁碳纳米管薄膜的压阻效应研究

王永田; 刘宗德; 易军; 薛志勇

doi:10.7498/aps.61.057302

摘要

对多壁碳纳米管薄膜的压阻效应进行了研究. 实验所用的多壁碳纳米管用热灯丝化学气相沉积法合成, 压阻效应用三点弯曲法测量. 研究发现: 在室温下与500微应变内, 原始的多壁碳纳米管薄膜无明显压阻效应, 而经化学修饰处理的碳纳米管膜的压阻因子最高可达120左右, 大大超过多晶硅(Si)在35℃时的压阻因子30, 并且压阻因子与制备方法密切相关. 重点讨论了多壁碳纳米管薄膜产生压阻效应的机制.

关键词:

In this paper, the piezoresistive effect of the multiwalled carbon nanotube (MWCNT) film is studied. Carbon nanotubes are synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the MWCNT film is studied by a three-point bending test. The gauge factor of the MWCNT film under 500 microstrain is found to be at most 120 at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in MWCNT film is also discussed.

Keywords:

作者及机构信息

1.
华北电力大学电站设备状态监测与控制教育部重点实验室, 北京 102206;

2.
华北电力大学苏州研究院, 苏州 215123;

3.
中国科学院物理研究所, 北京 100190

基金项目: 国家自然科学基金(批准号: 51101056, 51006034)、国家重点基础研究发展计划(批准号: 2011CB710706)、新金属材料国家重点实验室开放基金(批准号: 2010Z-02)和苏州市科技计划项目(批准号: SYG201002)资助的课题.

Authors and contacts

1.
Key Laboratory of Condition Monitoring and Control for Power Plant Equipment of Ministry of Education, North China Electric Power University, Beijing 102206, China;

2.
The Suzhou Research Institute of North China Electric Power University, Suzhou 215123, China;

3.
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51101056, 51006034), the National Basic Research Program of China (Grant No. 2011CB710706), the State Key Laboratory of Advanced Metals and Materials (Grant No. 2010Z-02), and the Planned Science and Technology Project of Suzhou, China (Grant No. SYG201002).

参考文献

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施引文献

[1]	Lijima S 1991 Nature 358 56
[2]	Zhang Z X§Hou S M§Zhao X Y, Zhang H, Sun J P, Liu W M,Xue Z Q, Shi Z J, Gu Z N 2002 Acta Phys. Sin. 51 434 (in Chinese) [张兆祥, 侯士敏, 赵兴钰, 张浩, 孙建平, 刘惟敏, 薛增泉,施祖进, 顾镇南 2002 51 434]
[3]	Wang Y J§Wang L D§Yang M, Yan C, Wang X D, Xi C P, Li SN 2011 Acta Phys. Sin. 60 077303 (in Chinese) [王益军, 王六定, 杨敏, 严诚, 王小冬, 席彩萍, 李邵宁 2011 60 077303]
[4]	Liu H, Yin H J, Xia S N 2009 Acta Phys. Sin. 58 8489 (in Chinese) [刘红, 印海建, 夏树宁 2009 58 8489]
[5]	Gaal R, Salvetat J P, Forro L 2000 Phys. Rev. B 61 7320
[6]	Bozhko A D, Sklovsky D E, Nalimova V A, Rinzler A G, SmalleyR E, Fischer J E 1998 Appl. Phys. A: Mater. Sci. Process 67 75
[7]	Tombler T W, Zhou C, Alexseyev L, Kong J, Dai H, Liu L, JayanthiS C, Tang M, Wu S Y 2000 Nature 405 769
[8]	Paulson S, Falvo M R, Snider N 1999 Appl. Phys. Lett. 75 2936
[9]	Fang L, Wang W L, Ding P D, Liao K J, Wang J 1999 J. Appl.Phys. 86 5185
[10]	Wang W L, Jiang X, Taube K, Klages C P 1997 J. Appl. Phys. 82729
[11]	Rueckers T, Kim K, Joselevich E, Tseng G Y, Cheung C L, LieberC M 2000 Science 289 94
[12]	WangWL, Liao K J, Feng B, Sanchez G, PoloMC, Esteve J 1998Diam. Relat. Mater. 7 528
[13]	Cao P J, Gu Y S, Liu F, Liu H W, Zhang Q F, Wang Y G, Gao H J2004 Acta Phys. Sin. 53 854 (in Chinese) [曹培江,顾有松, 刘飞, 刘虹雯, 张琦锋, 王岩国, 高鸿钧 2004 53 854]
[14]	Wu Z H, Wang W L, Liao K J, Wang Y T, Hu C G, Fu G Z, WanB Y, Yu P 2004 Acta Phys. Sin. 53 3462 (in Chinese) [吴子华,王万录, 廖克俊, 王永田, 胡陈果, 付光宗, 万步勇, 余鹏 2004 53 3462]
[15]	Jin L, Bower C, Zhou O 1998 Appl. Phys. Lett. 73 1197
[16]	Shui X P, Chung D L 1995 Smart Mater. Struct. 5 243
[17]	Kazaoui S, Minami N, Jacquemin R, Kataura H, Achiba Y 1999Phys. Rev. B 60 13339
[18]	He Y L, Lin H Y, Wu X H, Yu M B, Yu X M, Wang H, Li C 1996Chinese Journal of Materials Researc H 10 33 (in Chinese) [何宇亮, 林鸿溢, 武旭辉, 余明斌, 于晓梅, 王珩, 李冲 1996材料研究导报 10 33]
[19]	Wang W L, Zhang Z G, Liao K J, Wu B, Zhang S B, Liao M Y1997 Chinese J. Semiconductors 1997 18 474 (in Chinese) [王万录, 张振刚, 廖克俊, 吴彬, 张世斌, 廖梅勇 1997 半导体学报 18 474]
[20]	Jang JW, Lee D K, Lee C E, Lee T J, Lee C J, Noh S J 2002 SolidState Communications 122 619
[21]	Bachtold A, Jonge M D, Grove R K, McEuen P L, Buitelaar M,Schonenberger C 2001 Phys. Rev. Lett. 87 166801
[22]	Kaiser A B 1989 Phys. Rev. B 40 2806
[23]	Kaiser A B, Dusberg G, Roth S 1998 Phys. Rev. B 57 1418
[24]	Kaiser A B, Flanagan G U, Stewart D M, Beaglehole D 2001 SyntheticMetals 117 67
[25]	Kim G T, Burghard M, Suh D S, Liu K, Park J G, Roth S, Park YW 1999 Synthetic Metals 105 207
[26]	Yoon Y G, Mazzoni M S C, Choi H J, Ihm J, Louie S G 2001Phys. Rev. Lett. 86 688
[27]	Buldum A, Lu J P 2001 Phys. Rev. B 63 161403
[28]	FuhrerMS, Nygard J, Shih L, Forero M, Yoon Y G, MazzoniMSC, Choi H J, Ihm J, Louie S G, Zettl A, McEuen P L 2000 Science288 494
[29]	Liu K, Avouris Ph, Martel R, Hsu W K 2001 Phys. Rev. B 63161404
[30]	Hertel T, Walkup R E, Avouris P 1998 Phys. Rev. B 58 13870
[31]	Stahl H, Appenzeller J, Martel R, Avouris Ph, Lengeler B 2000Phys. Rev. Lett. 85 5186

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