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We report on the study of CdSe quantum dot microcavity formed between two distributed Bragg reflectors (DBRs). The active region consisting of CdSe quantum dots is embedded in PMMA. We use the transfer matrix method (TMM) to simulate the reflectivity spectrum of the microcavity. We demonstrate an enhancement of the spontaneous emission from the colloidal CdSe quantum dots in the microcavity. After embedding the QDs in the cavity, the full width at half maximum (FWHM) is narrowed to 7.5 nm compared with 27.9 nm of QDs in free space. The emission of the quantum dots is enhanced by a factor of 3.7 due to the microcavity effect.
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Keywords:
- CdSe quantum dots /
- photoluminescence enhancement /
- microcavity effect
[1] Kazes M, Lewis D Y, Ebenstein Y, Banin U 2004 Adv. Funct. Mater. 14 957
[2] Schfer J, Mondia J P, Sharma R, Lu Z H, Susha A S, Rogach A L, Wang L J 2008 Nano Lett. 8 1709
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[18] Ma H, Ma G H, Wang W J, Gao X X, Ma H L 2008 Chin. Phys. B 17 1280
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[22] [23] Hu L, Wu H Z, Du L X, Ge H Y, Chen X, Dai N 2011 Nanotechnol. 22 125202
[24] Lao Y F 2005 Ph.D. Dissertation (Shanghai:Chinese Academy of Sciences) (in Chinese)[劳燕锋 2005 博士论文 (上海: 中国科学院) ]
[25] [26] [27] Finlayson C E, Ginger D S, Greenham N C 2000 Appl. Phys. Lett. 77 2500
[28] Wang X Y, Shih C K, Xu J F, Xiao M 2006 Appl. Phys. Lett. 89 113114
[29] [30] [31] Liu B L, Wang B, Xu Z Y 2000 Chin. J. Semicond. 22 335 (in Chinese) [刘宝利、王 炳、徐仲英 2000 半导体学报 22 335]
[32] Murray C B, Kagan C R, Bawendi M G 2000 Annu. Rev. Mater. Sci. 30 545
[33] [34] [35] Chen D A, Shen L, Zhang J Y, Cui Y P 2007 Acta Phys. Sin. 56 6340 (in Chinese) [陈定安、沈 里、张家雨、崔一平 2007 56 6340]
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[1] Kazes M, Lewis D Y, Ebenstein Y, Banin U 2004 Adv. Funct. Mater. 14 957
[2] Schfer J, Mondia J P, Sharma R, Lu Z H, Susha A S, Rogach A L, Wang L J 2008 Nano Lett. 8 1709
[3] [4] Roither J, Kovalenko M V, Pichler S, Schwarzl T, Heiss W 2005 Appl. Phys. Lett. 86 241104
[5] [6] [7] Antonello A, Guglielmi M, Bello V, Mattei G, Chiasera A, Ferrari M, Martucci A 2010 J. Phys. Chem. C 114 18423
[8] [9] Poitras C B, Lipson M, Du H, Hahn M A, Krauss T D 2003 Appl. Phys. Lett. 82 4032
[10] Valappil N, Luberto M, Menon V M, Zeylikovich I, Gayen T K, Franco J, Dan B B, Alfano R R 2007 Photo. Nanostruct. Fundam. Appl. 5 184
[11] [12] [13] DeLouise L A, Ouyang H M 2009 Phys. Status Solidi C 6 1729
[14] Martiradonna L, De Vittorio M, Troisi L, Todaro M T, Mazzeo M, Stomeo T, Anni M, Cingolani R, Gigli G 2005 Microelectron. Eng. 7879 593
[15] [16] [17] Cao J, Liu X, Zhang X B, Wei F X, Zhu W Q, Jiang X Y, Zhang Z L, Xu S H 2007 Acta Phys. Sin. 56 1088 (in Chinese) [曹 进、刘 向、张晓波、委福祥、朱文清、蒋雪茵、张志林、许少鸿 2007 56 1088]
[18] Ma H, Ma G H, Wang W J, Gao X X, Ma H L 2008 Chin. Phys. B 17 1280
[19] [20] [21] Zhu B H, Wang F F, Zhang K, Ma G H, Gu Y Z, Guo L J, Qian S X 2008 Acta Phys. Sin. 57 6557 (in Chinese) [朱宝华、王芳芳、张 琨、马国宏、顾玉宗、郭立俊、钱士雄 2008 57 6557]
[22] [23] Hu L, Wu H Z, Du L X, Ge H Y, Chen X, Dai N 2011 Nanotechnol. 22 125202
[24] Lao Y F 2005 Ph.D. Dissertation (Shanghai:Chinese Academy of Sciences) (in Chinese)[劳燕锋 2005 博士论文 (上海: 中国科学院) ]
[25] [26] [27] Finlayson C E, Ginger D S, Greenham N C 2000 Appl. Phys. Lett. 77 2500
[28] Wang X Y, Shih C K, Xu J F, Xiao M 2006 Appl. Phys. Lett. 89 113114
[29] [30] [31] Liu B L, Wang B, Xu Z Y 2000 Chin. J. Semicond. 22 335 (in Chinese) [刘宝利、王 炳、徐仲英 2000 半导体学报 22 335]
[32] Murray C B, Kagan C R, Bawendi M G 2000 Annu. Rev. Mater. Sci. 30 545
[33] [34] [35] Chen D A, Shen L, Zhang J Y, Cui Y P 2007 Acta Phys. Sin. 56 6340 (in Chinese) [陈定安、沈 里、张家雨、崔一平 2007 56 6340]
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