Ni全硅化金属栅功函数调节技术研究

周华杰; 徐秋霞

doi:10.7498/aps.60.108102

摘要

通过制备栅内不同掺杂条件的Ni全硅化金属栅电容并分析其C-V和Vfb-EOT特性发现,Ga和Yb较常规的杂质而言具有更好的栅功函数调节能力,能够分别将Ni全硅化金属栅电极功函数调节到价带顶和导带底附近,满足高性能体硅平面互补金属氧化物半导体(CMOS)器件对栅电极功函数的要求. 同时根据电偶极子(Dipole)理论分析了Ga和Yb具有较强栅功函数调节能力的原因. 另外,研究发现栅内掺入Ga或Yb杂质后的Ni全硅化金属栅电容的电容值变大、栅极泄漏电流反而变小,通过对C-V和栅极泄漏电流特性进行分析,对这一现象进行了解释.

关键词:

金属栅电极 /
功函数 /
硅化物

Abstract

Through fabricating Ni-FUSI metal gate capacitors and analyzing their C-V and Vfb-EOT characteristics, it is found that Ga or Yb has more favorable modulation ability than conventional dopants. The work function of Ni-FUSI metal gate is modulated close to the top of valince band and the bottom of conduction band, which meets the requirement of high performance CMOS devices. The high modulation abilities of Ga and Yb are explained by dipole theory. Moreover, it is found that the capacitance value of Ni-FUSI metal gate capacitor increases after incorporating Ga or Yb into Ni-FUSI metal gate, but the gate leakage current decreases. And the detailed explanation for the above phenomena is also included in this article by analyzing C-V and gate leakage current characteristics.

Keywords:

metal gate /
work function /
silicide

作者及机构信息

1.
中国科学院微电子器件与集成技术重点实验室,北京 100029

基金项目: 国家02科技重大专项项目(批准号:2009ZX02035-06)资助的课题.

Authors and contacts

1.
Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029,China

参考文献

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施引文献

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[3]
[4]
[5]	Polishchuk I, Ranade P, King T J, Hu C M 2002 IEEE electron device letters 23 200
[6]	Ha D, Takeuchi H, Choi Y K, King T J 2004 IEEE transactions on electron devices 51 1989
[7]
[8]	Tavel B, Skotnicki T, Pares G, Carriere N, Rivoire M, Leverd F, Julien C, Torres J, Pantel R 2001 International Electron Devices Meeting 825
[9]
[10]	Mayuzumi S, Yamakawa S, Tateshita Y, Hirano T, Nakata M, Yamaguchi S, Tai K, Wakabayashi H, Tsukamoto M, Nagashima N 2009 IEEE Trans. Electron Devices 56 620
[11]
[12]
[13]	Chen Y, Chen K, Yeh W, Yuan J, Yeh F 2010 IEEE Transactions on Device and Materials Reliability Issue: 99 1
[14]	Zhou H J, Xu Q X 2007 Chinese Journal of Semiconductors 28 1532
[15]
[16]	Shan X N, Huang R, Li Y, Cai Y M 2007 Acta Physica Sinica 56 4943 (in Chinese) [单晓楠、黄如、李炎、蔡一茂 2007 56 4943]
[17]
[18]
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[20]
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[22]
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[25]
[26]
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[28]
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[30]	Sim J H, Wen H C, Lu lP, Kwong D L 2003 IEEE Electron Device Letters 24 631
[31]
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[33]	Yu D S, Wu C H, Huang C H, Chin A, ChenW J, Zhu C X, Li M F, Kwong D L 2003 IEEE Electron Device Lett. 24 739
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[38]
[39]	Yu H Y, Chen J D, Li M F, Lee S J, Kwong D L, van Dal M, Kittl JA, Lauwers A, Augendre E, Kubicek S, Zhao C, Bender H, Brijs B, Geenen L, Benedetti A, Absil P, Jurczak M, Biesemans S 2005 International Electron Devices Meeting p630
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[43]
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[46]
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[48]	Sivasubramani P, Boscke T S, Huang J, Young C D, Kirsch P D, Krishnan S A, Quevedo-Lopez M A, Govindarajan S, Ju B S, Harris H R, Lichtenwalner D J, Jur J S, Kingon A I, Kim J, Gnade B E, Wallace R M, Bersuker G, Lee B H, Jammy R 2007 IEEE Symposium on VLSI Technology p68
[49]
[50]
[51]	Lim A E J, Lee R T P, Samudra G S, Kwong DL, Yeo Y C 2008 IEEE Transactions on Electron Devices 55 2370

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