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利用非自耗真空电弧熔炼法制备了NdNi2Ge2化合物样品,采用X射线粉末衍射技术和Rietveld全谱拟合分析方法测定了其晶体结构. 结果显示该化合物的空间群为I4/mmm,点阵参数为:a=4.120(1),c=9.835(0),Z=2,Nd原子占据2a晶位,Ni原子占据4d晶位,Ge原子占据4e晶位. NdNi2Ge2化合物呈现顺磁性,应用居里-外斯定律拟合计算得到居里-外斯常数为25.8,居里-外斯温度为6.24 K. 有效势磁矩为3.69B,这与理论计算Nd3+的磁矩相符,表明磁矩主要源于Nd3+. 电阻率变化范围为0.3 m-11 m,电阻曲线拟合显示NdNi2Ge2呈半金属性.
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关键词:
- NdNi2Ge2 /
- Rietveld结构精修 /
- 电磁输运
The sample of compound NdNi2Ge2 is prepared by arc melting. The crystal structure is analyzed using powder X-ray diffraction and refined with Rietveld is method. It is shown that NdNi2Ge2 intermetallic compound crystallizes into a tetragonal structure with space group of I/4mmm and its lattice constant is a=4.120(1),c=9.835(0), Z=2. Nd atoms occupy 2a positions, Ni atoms 4d positions and Ge atom 4e positions. NdNi2Ge2 intermetallic compound has a Curie-Weiss constant of 25.8 and Curie-Weiss temperature of 6.24 K. The effective magnetic moment is 3.69B, which is very close to that of Nd3+. It implies that the magnetic moment originates mainly from Nd3+ ion. The resistivity varies from 0.3 m1.1 m. Fitting results show that this intermetallic compound is semimetal.-
Keywords:
- NdNi2Ge2 /
- Rietveld refinement /
- electromagnetic transport
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[20] Jeon H C, Kang T W, Kim T W, Kang Joongoo, Chang K J 2005 Appl. Phys. Lett. 87 092501
[21] [22] [23] Ayoub J P, Faver L, Ronda A, Berbezier I, De Padova P, Olivieri B 2006 Mat. Sci. Semicond. Process 9 832
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[32] Hong C 2004 Journal of Solid State Chemistry. 177 4341
[33] [34] Szytula A 1988 Magn. Magn. Mater. 75 298
[35] -
[1] DiVncenzo D P 1995 Science 270 255
[2] [3] Ahn K Y, Shafer M W 1970 J. Appl. Phys. 41 1260
[4] [5] Muger A 1986 Phys. Rep. 141 51
[6] [7] De Boeck J, Oesterholt R, Van Esch A, Bender H, Bruynseraede C, Van Hoof C, Borghs G 1996 appl. Phys. Lett. 68 2744
[8] Ohno H 1996 Appl. Phys. Lett. 69 3636
[9] [10] Ohno H 1998 Science 281 951
[11] [12] [13] Ohno Y, Young D K, Beschoten B, Matsukura F, Ohno H, Awschalom D D 1999 Nature 402 790
[14] [15] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[16] [17] Thaler G T, Overberg E, Gila B, Frazier R, Abernathy C R, Pearton S J, Lee J S, Lee S Y, Park Y D, Khim Z G, Kim J, Ren F 2002 Appl. Phys. Lett. 80 3964
[18] [19] Chitta V A, Coaquira J A H, Fernandez J R L, Duarte C A, Leite L R, Schikora D, As D J, Lischka K, Abramof E 2004 Appl. Phys. Lett. 85 3777
[20] Jeon H C, Kang T W, Kim T W, Kang Joongoo, Chang K J 2005 Appl. Phys. Lett. 87 092501
[21] [22] [23] Ayoub J P, Faver L, Ronda A, Berbezier I, De Padova P, Olivieri B 2006 Mat. Sci. Semicond. Process 9 832
[24] [25] Morresi L, Pinto N, Ficcadenti M, Murri R, Orazio F D, Lucari F 2006 Mater. Sci. Eng. B 126 197
[26] Venturini V, Malaman B 1996 J. Alloy. Compds. 235 201
[27] [28] Budko S L, Islam Z, Wiener T A, Fisher I R, Lacerda A H, Canfield P C 1999 Magn. Magn. Mater. 205 53
[29] [30] [31] Liu Y C, Guo Y Q, Zhou H P, Tao K 1999 Journal of Inorganic Materials 14 3(in Chinese) [刘耀诚、 郭永权、 周和平、 陶 琨 1999 无机材料学报 14 3]
[32] Hong C 2004 Journal of Solid State Chemistry. 177 4341
[33] [34] Szytula A 1988 Magn. Magn. Mater. 75 298
[35]
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