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Based on the dielectric property of carbon nanotube film, the surface plasmon ploariton propagation and localization phenomena on the carbon nanotube film are investigated using THz time-domain spectroscopy technique. The simulation results show that in the gate period of 168um, the resonance peaks of surface plasmon mode are at 0.99THz and 1.95 THz, which are consistent with the theoretical results. Further analysis demonstrates that both the gate thickness and the width have an important effect on the properties of surface plasmon ploaritons.
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Keywords:
- terahertz /
- surface plasmons wave /
- carbon nanotubes
[1] Hao P, Wu Y H, Zhang P 2010 Acta Phys. Sin. 59 6532 (in Chinese)[郝 鹏、 吴一辉、 张 平 2010 59 6532]
[2] Yang J, Cao Q, Zhou C 2010 Opt. Express 18 18550
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[6] Song G F, Wang W M, Cai L K, Guo B S, Wang Q, Xu Y, Wei X, Liu Y T 2010 Acta Phys. Sin. 59 5105 (in Chinese)[宋国峰、 汪卫敏、 蔡利康、 郭宝山、 王 青、 徐 云、 韦 欣、 刘运涛 2010 59 5105]
[7] [8] [9] Arnold C, Zhang Y C, Bivas J G 2010 Appl. Phys. Lett. 96 113108
[10] Hubert A J, Keilmann F, Wittborn J, Aizpurua J, Hillenbrand R 2008 Nano Lett. 8 3766
[11] [12] Lo S Z A, Murphy T E 2010 Appl. Phys. Lett. 96 201104
[13] [14] [15] Gordon R, Brolo A G, Sinton D, Kavanagh K L 2010 Laser Phonton. Rev. 4 311
[16] Lal S, Link S, Halas N J 2007 Nature 1 641
[17] [18] Srituravanich W, Fang N, Sun F, Luo Q, Zhang X 2004 Nano Lett. 4 1085
[19] [20] Maier S A, Atwater H A 2005 J. Appl. Phsy. 98 011101
[21] [22] [23] Chen H T, Kersting R,Cho G C 2003 Appl. Phys. Lett. 83 1
[24] Nagel M, Bolivar P H, Brucherseifer M, Kurz H, Bosserhoff A, Buttner R 2002 Appl. Phys. Lett. 80 154
[25] [26] Giannini V, Berrier A, Maier S A, Sanchez-Gil J A, Rivas J G 2010 Opt. Express 18 2797
[27] [28] Lu Y L, Zhang W L, Qiu M 2007 Active and passive electronic components (Colorado: Hindawi Pulishing Co) p6
[29] [30] [31] Jeon T I, Kim K J, Kang C, Maeng, Son J H, An K H, Lee J Y, Lee Y H 2004 J. Appl. Phys. 95 5736
[32] [33] Bommeli F, Degiorgi L, Wachter P, Bacsa W S, Heer W A, Forro L 1996 Solid State Communication 99 513
[34] [35] Azad A K, Zhao Y G, Zhang W L, He M X 2006 Opt. Lett. 31 2637
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[1] Hao P, Wu Y H, Zhang P 2010 Acta Phys. Sin. 59 6532 (in Chinese)[郝 鹏、 吴一辉、 张 平 2010 59 6532]
[2] Yang J, Cao Q, Zhou C 2010 Opt. Express 18 18550
[3] [4] [5] Chen H, Wang L 2009 Acta Phys. Sin. 58 4605 (in Chinese)[陈 华、 汪 力 2009 58 4605]
[6] Song G F, Wang W M, Cai L K, Guo B S, Wang Q, Xu Y, Wei X, Liu Y T 2010 Acta Phys. Sin. 59 5105 (in Chinese)[宋国峰、 汪卫敏、 蔡利康、 郭宝山、 王 青、 徐 云、 韦 欣、 刘运涛 2010 59 5105]
[7] [8] [9] Arnold C, Zhang Y C, Bivas J G 2010 Appl. Phys. Lett. 96 113108
[10] Hubert A J, Keilmann F, Wittborn J, Aizpurua J, Hillenbrand R 2008 Nano Lett. 8 3766
[11] [12] Lo S Z A, Murphy T E 2010 Appl. Phys. Lett. 96 201104
[13] [14] [15] Gordon R, Brolo A G, Sinton D, Kavanagh K L 2010 Laser Phonton. Rev. 4 311
[16] Lal S, Link S, Halas N J 2007 Nature 1 641
[17] [18] Srituravanich W, Fang N, Sun F, Luo Q, Zhang X 2004 Nano Lett. 4 1085
[19] [20] Maier S A, Atwater H A 2005 J. Appl. Phsy. 98 011101
[21] [22] [23] Chen H T, Kersting R,Cho G C 2003 Appl. Phys. Lett. 83 1
[24] Nagel M, Bolivar P H, Brucherseifer M, Kurz H, Bosserhoff A, Buttner R 2002 Appl. Phys. Lett. 80 154
[25] [26] Giannini V, Berrier A, Maier S A, Sanchez-Gil J A, Rivas J G 2010 Opt. Express 18 2797
[27] [28] Lu Y L, Zhang W L, Qiu M 2007 Active and passive electronic components (Colorado: Hindawi Pulishing Co) p6
[29] [30] [31] Jeon T I, Kim K J, Kang C, Maeng, Son J H, An K H, Lee J Y, Lee Y H 2004 J. Appl. Phys. 95 5736
[32] [33] Bommeli F, Degiorgi L, Wachter P, Bacsa W S, Heer W A, Forro L 1996 Solid State Communication 99 513
[34] [35] Azad A K, Zhao Y G, Zhang W L, He M X 2006 Opt. Lett. 31 2637
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