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Six-layer Ba0.6Sr0.4TiO3 (BST) films are prepared by an improved sol-gel method. The effects of various preheating methods on morphology and dielectric properties are studied. XRD results reveal that all BST films preferentially grow along the (110) direction and have cubic perovskite structures, and that preheating can obviously enhance crystallization. XPS results show that the preheating can also decrease surface non-perovskite structure and cause perovskite structure to increase markedly. AFM results display that as the preheating number increases, BST films show significant improvement on morphology with surface roughness reducing. The dielectric property measurement exhibits that tunability is remarkably increased with the increase of preheating number. BST film with all layers preheated shows that its tunability exceeds 55% at 20V bias voltage, while BST film with odd number layers preheated presents a moderate capacitance, lower dielectric loss, approximately 50% tunability at 20V bias voltage and significant increase in figure of merit (FOM) with the bias voltage. The excellent combination of dielectric properties can satisfy the application demand of microwave tunable devices. Also, the relevant mechanism of high tunability is discussed.
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Keywords:
- preheating /
- high tunability /
- sol-gel /
- BST
[1] Liao J X, Pan X F, Wang H Q, Zhang J, Fu X J, Tian Z 2009 Rare Metal Materials and Engineering 38 1987 (in Chinese) [廖家轩、潘笑风、王洪全、张 佳、傅向军、田 忠 2009 稀有金属材料与工程 38 1987]
[2] Khalfallaoui A, Velu G, Burgnies L, Carru J C 2010 IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 57 1029
[3] Yan X, Ren W, Shi P, Wu X Q, Chen X F, Yao X 2008 Appl. Surf. Sci. 255 2129
[4] Wang J, Zhang T J, Xiang J H, Zhang B S 2008 Mater. Chem. and Phys. 108 445
[5] Liao J X, Yang C R, Tian Z, Yang H G, Jin L 2006 J. Phys. D: Appl. Phys. 39 2473
[6] Somnath C R, Sharma M C, Bhatnagar G L, Manchanda R, Balakrishman V R,Samanta S B 2004 Appl. Surf. Sci. 236 306
[7] Zhong S, Alpay S P, Cole M W, Ngo S, Hirsch S, Demaree J D 2007 Appl. Phys. Lett. 90 092901
[8] Candy C L, Li H, Alpay S P, Salamanca L R, Roytburd A L, Ramesh R 2000 Appl. Phys. Lett. 77 1695
[9] Lee H Y, Liu H J, Liang Y C, Wu K F, Lee C H 2009 J. Electrochem. Soc. 156 G114
[10] Liao J X, Wei X B, Pan X F, Zhang J, Fu X J, Wang H Q 2009 Journal of Inorganic Materials 24 962 (in Chinese) [廖家轩、魏雄邦、潘笑风、张 佳、傅向军、王洪全 2009 无机材料学报 24 962]
[11] Liao J X, Wang H Q, Pan X F, Fu X J, Zhang J, Tian Z 2009 Journal of Inorganic Materials 24 387 (in Chinese) [廖家轩、王洪全、潘笑风、傅向军、张 佳、田 忠 2009 无机材料学报 24 387]
[12] West A R 1984 Solid State Chemistry and its Applications ( New York: John Wiley and Sons )
[13] Peng L S, Xi X X, Moeckly B H, Alpay S P 2003 Appl. Phys. Lett. 83 4592
[14] Durand-Drouhin O, Lejeune M, Clin M, Ballutaud D Benlahsen 2001 Solid State Communications 118 179
[15] Zhang X H, Ma Bin, Zhang Z Z, Jin Q Y 2010 Chin. Phys. B 19 107504
[16] Li S T, Cao J X, Fan G H, Zhang Y, Zheng S W, Su J 2010 Chin. Phys. B 19 107206
[17] Yin Y, Fu X H, Zhang L, Ye H 2009 Acta Phy. Sin.58 5013 (in Chinese) [尹 伊、傅兴海、张 磊、叶 辉 2008 58 5013]
[18] Jun S J, Kim S Y, Lee J, Kim Y W 2001 Appl. Phys. Lett. 78 2542
[19] Cramer N, Ali M, Kalkur T S 2005 Appl. Phys. Lett. 87 032903
[20] Chang W, James S H, Adriaan C C, Jeffrey M P, Steven W K, Charles M G, Douglas B C 1999 Appl. Phys. Lett. 74 1033
[21] Peng D W, Meng Z Y 2003 Microelectronic Engineering 66 631
[22] Lee S Y, Tseng T Y 2002 Appl. Phys. Lett. 80 1797
[23] Cole M W, Joshi P C, Ervin M H 2001 J. Appl. Phys. 89 6336
[24] Tomoaki Y, Vladimir O S, Andreas N, Muralt P, Alexander K T, Nava S 2006 Appl. Phys. Lett. 89 032905
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[1] Liao J X, Pan X F, Wang H Q, Zhang J, Fu X J, Tian Z 2009 Rare Metal Materials and Engineering 38 1987 (in Chinese) [廖家轩、潘笑风、王洪全、张 佳、傅向军、田 忠 2009 稀有金属材料与工程 38 1987]
[2] Khalfallaoui A, Velu G, Burgnies L, Carru J C 2010 IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 57 1029
[3] Yan X, Ren W, Shi P, Wu X Q, Chen X F, Yao X 2008 Appl. Surf. Sci. 255 2129
[4] Wang J, Zhang T J, Xiang J H, Zhang B S 2008 Mater. Chem. and Phys. 108 445
[5] Liao J X, Yang C R, Tian Z, Yang H G, Jin L 2006 J. Phys. D: Appl. Phys. 39 2473
[6] Somnath C R, Sharma M C, Bhatnagar G L, Manchanda R, Balakrishman V R,Samanta S B 2004 Appl. Surf. Sci. 236 306
[7] Zhong S, Alpay S P, Cole M W, Ngo S, Hirsch S, Demaree J D 2007 Appl. Phys. Lett. 90 092901
[8] Candy C L, Li H, Alpay S P, Salamanca L R, Roytburd A L, Ramesh R 2000 Appl. Phys. Lett. 77 1695
[9] Lee H Y, Liu H J, Liang Y C, Wu K F, Lee C H 2009 J. Electrochem. Soc. 156 G114
[10] Liao J X, Wei X B, Pan X F, Zhang J, Fu X J, Wang H Q 2009 Journal of Inorganic Materials 24 962 (in Chinese) [廖家轩、魏雄邦、潘笑风、张 佳、傅向军、王洪全 2009 无机材料学报 24 962]
[11] Liao J X, Wang H Q, Pan X F, Fu X J, Zhang J, Tian Z 2009 Journal of Inorganic Materials 24 387 (in Chinese) [廖家轩、王洪全、潘笑风、傅向军、张 佳、田 忠 2009 无机材料学报 24 387]
[12] West A R 1984 Solid State Chemistry and its Applications ( New York: John Wiley and Sons )
[13] Peng L S, Xi X X, Moeckly B H, Alpay S P 2003 Appl. Phys. Lett. 83 4592
[14] Durand-Drouhin O, Lejeune M, Clin M, Ballutaud D Benlahsen 2001 Solid State Communications 118 179
[15] Zhang X H, Ma Bin, Zhang Z Z, Jin Q Y 2010 Chin. Phys. B 19 107504
[16] Li S T, Cao J X, Fan G H, Zhang Y, Zheng S W, Su J 2010 Chin. Phys. B 19 107206
[17] Yin Y, Fu X H, Zhang L, Ye H 2009 Acta Phy. Sin.58 5013 (in Chinese) [尹 伊、傅兴海、张 磊、叶 辉 2008 58 5013]
[18] Jun S J, Kim S Y, Lee J, Kim Y W 2001 Appl. Phys. Lett. 78 2542
[19] Cramer N, Ali M, Kalkur T S 2005 Appl. Phys. Lett. 87 032903
[20] Chang W, James S H, Adriaan C C, Jeffrey M P, Steven W K, Charles M G, Douglas B C 1999 Appl. Phys. Lett. 74 1033
[21] Peng D W, Meng Z Y 2003 Microelectronic Engineering 66 631
[22] Lee S Y, Tseng T Y 2002 Appl. Phys. Lett. 80 1797
[23] Cole M W, Joshi P C, Ervin M H 2001 J. Appl. Phys. 89 6336
[24] Tomoaki Y, Vladimir O S, Andreas N, Muralt P, Alexander K T, Nava S 2006 Appl. Phys. Lett. 89 032905
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