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In this paper the phase transition temperature of epitaxial ferroelectric thin film is analyzed and discussed systematically via the dynamic Ginzburg-Landau (DGL) equation by taking the effective interior stress, surface eigenstrain relaxation and depolarization field. When the thickness of ferroelectric film is changed, external and internal factors, which affect phase transition temperature of ferroelectric thin films,are presented to explain the experimental observations. There is a good quantitative agreement between the theoretical results and experimental data for BaTiO3 thin film epitaxially grown on SrTiO3 substrate.
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Keywords:
- size effect /
- ferroelectric thin film /
- phase transition temperature /
- boundary conditions
[1] Zeng H R, Yu H F, Chu R Q, Li R G, Yin Q R, Tang X G 2005 Acta Phys. Sin. 54 1437 (in Chinese) [曾华荣、余寒峰、初瑞清、李国荣、殷庆瑞、唐新桂 2005 54 1437]
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[3] Zhao X Y, Liu S J, Zhu J H, Dai N, Hu G J 2008 Acta Phys. Sin. 57 5968 (in Chinese) [赵晓英、刘世建、褚君浩、戴 宁、胡古今 2008 57 5968]
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[5] Qiu Q Y, Nagarajan V, Alpay S P 2008 Phys. Rev. B 78 064117
[6] Hu Z S, Tang M H, Wang J B, Zheng X J, Zhou Y C 2008 Phys. B 403 3700
[7] Zembilgotov A G, Pertsev N A, Kohlstedt H, Waser R 2002 J. Appl. Phys. 91 2247
[8] Alpay S P, Misirlioglu I B, Sharma A, Ban Z G 2004 J. Appl. Phys. 95 8118
[9] Wang Y L, Wei T R, Liu B T, Deng Z C 2007 Acta Phys. Sin. 56 2931 (in Chinese) [王英龙、魏同茹、刘保亭、邓泽超 2007 56 2931]
[10] Zheng Y, Wang B, Woo C H 2007 Phys. Lett. A 368 117
[11] Sun P N, Cui L, Lv T Q 2009 Chin. Phys. B 18 1658
[12] Zhou J, Lv T Q, Xie W G, Cao W W 2009 Chin. Phys. B 18 3054
[13] Iijima K, Terashima T, Yamamoto K, Hirata K, Bando Y 1990 Appl. Phys. Lett. 56 527
[14] Onodera A, Kawamura Y, Okabe T, Terauchi H 1999 J. Eur. Ceram. Soc. 19 1477
[15] Streiffer S K, Eastman J A, Fong D D, Thompson C, Munkholm A, Murty M V R, Auciello O, Bai G R, Stephenson G B 2002 Phys.Rev.Lett. 89 067601
[16] Petraru A, Pertsev N A, Kohlstedt H, Poppe U, Waser R, Solbach A, Klemradt U 2007 J. Appl. Phys. 101 114106
[17] Lichtensteiger C, Triscone J M, Junquera J, Ghosez P 2005 Phys. Rev. Lett. 94 047603
[18] Palova L, Chandra P, Rabe K M 2007 Phys. Rev. B 76 014112
[19] Speck J S, Pompe W 1994 J. Appl. Phys. 76 466
[20] Junquera J, Ghosez P 2003 Nature (London) 422 506
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[1] Zeng H R, Yu H F, Chu R Q, Li R G, Yin Q R, Tang X G 2005 Acta Phys. Sin. 54 1437 (in Chinese) [曾华荣、余寒峰、初瑞清、李国荣、殷庆瑞、唐新桂 2005 54 1437]
[2] Ai S T 2006 Chin. Phys. 15 1364
[3] Zhao X Y, Liu S J, Zhu J H, Dai N, Hu G J 2008 Acta Phys. Sin. 57 5968 (in Chinese) [赵晓英、刘世建、褚君浩、戴 宁、胡古今 2008 57 5968]
[4] Wang B, Woo C H 2005 J. Appl. Phys. 97 084109
[5] Qiu Q Y, Nagarajan V, Alpay S P 2008 Phys. Rev. B 78 064117
[6] Hu Z S, Tang M H, Wang J B, Zheng X J, Zhou Y C 2008 Phys. B 403 3700
[7] Zembilgotov A G, Pertsev N A, Kohlstedt H, Waser R 2002 J. Appl. Phys. 91 2247
[8] Alpay S P, Misirlioglu I B, Sharma A, Ban Z G 2004 J. Appl. Phys. 95 8118
[9] Wang Y L, Wei T R, Liu B T, Deng Z C 2007 Acta Phys. Sin. 56 2931 (in Chinese) [王英龙、魏同茹、刘保亭、邓泽超 2007 56 2931]
[10] Zheng Y, Wang B, Woo C H 2007 Phys. Lett. A 368 117
[11] Sun P N, Cui L, Lv T Q 2009 Chin. Phys. B 18 1658
[12] Zhou J, Lv T Q, Xie W G, Cao W W 2009 Chin. Phys. B 18 3054
[13] Iijima K, Terashima T, Yamamoto K, Hirata K, Bando Y 1990 Appl. Phys. Lett. 56 527
[14] Onodera A, Kawamura Y, Okabe T, Terauchi H 1999 J. Eur. Ceram. Soc. 19 1477
[15] Streiffer S K, Eastman J A, Fong D D, Thompson C, Munkholm A, Murty M V R, Auciello O, Bai G R, Stephenson G B 2002 Phys.Rev.Lett. 89 067601
[16] Petraru A, Pertsev N A, Kohlstedt H, Poppe U, Waser R, Solbach A, Klemradt U 2007 J. Appl. Phys. 101 114106
[17] Lichtensteiger C, Triscone J M, Junquera J, Ghosez P 2005 Phys. Rev. Lett. 94 047603
[18] Palova L, Chandra P, Rabe K M 2007 Phys. Rev. B 76 014112
[19] Speck J S, Pompe W 1994 J. Appl. Phys. 76 466
[20] Junquera J, Ghosez P 2003 Nature (London) 422 506
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