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Tunable ultraviolet laser based on intracavity third harmonic generation of external cavity surface emitting laser

Cheng Jia Wu Ya-Dong Yan Ri Peng Xue-Fang Zhu Ren-Jiang Wang Tao Jiang Li-Dan Tong Cun-Zhu Song Yan-Rong Zhang Peng

Citation:

Tunable ultraviolet laser based on intracavity third harmonic generation of external cavity surface emitting laser

Cheng Jia, Wu Ya-Dong, Yan Ri, Peng Xue-Fang, Zhu Ren-Jiang, Wang Tao, Jiang Li-Dan, Tong Cun-Zhu, Song Yan-Rong, Zhang Peng
cstr: 32037.14.aps.73.20231923
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  • Ultraviolet laser has high frequency, short wavelength, large single-photon energy, and high spatial resolution, and has wide applications in many fields such as fine processing, life sciences, and spectroscopy. In this work, a wavelength tunable ultraviolet laser based on intracavity third harmonic generation from an external-cavity surface-emitting laser is reported. The W-type resonant cavity of the laser is composed of a distributed Bragg reflector (DBR) at the bottom of the gain chip, three plane-concave mirrors, and a rear plane mirror. On the arm containing the gain chip, a birefringent filter is inserted at the Brewster angle as the polarization and wavelength tuning element, which can also narrow the linewidth of the fundamental laser to a certain extent. A type-I phase-matched LBO crystal is placed on the beam waist between the folding mirrors M2 and M3 to convert the 980 nm fundamental laser into 490 nm blue light, and a type-I phase-matched BBO crystal is inserted in the beam waist near the rear mirror to produce a 327 nm ultraviolet output from the remained 980 nm fundamental laser and the frequency-doubled 490 nm second harmonic. Before the BBO crystal, a half-wave plate at 980 nm is employed to change the polarization of the fundamental laser, so as to meet the type-I phase-matching condition of the used BBO crystal. Owing to the larger nonlinear coefficient of the type-I phase-matched BBO crystal, and its obviously higher transmittance at 327 nm wavelength than the usually used LBO crystal, the output power is obtained to be 538 mW at 327 nm ultraviolet wavelength, corresponding to a conversion efficiency of 1.1% from pump light to ultraviolet laser. The experiment is performed under conditions of 15 ℃ temperature, 47 W absorbed pump power, 5 mm-length LBO and 5 mm-length BBO crystals. By using a 2 mm-thick birefringent filter as the tuning element, 34.1 nm tuning range of the 980 nm fundamental laser, 14.3 nm tuning range of the 490 nm second harmonic, and 8.6 nm tuning range of the 327 nm third harmonic are obtained. The ultraviolet laser exhibits good beam quality as well as acceptable power stability with the maximum power fluctuation less than 2% within 4.5 h.
      Corresponding author: Zhang Peng, zhangpeng2010@cqnu.edu.cn
    • Funds: Project supported by the Cooperation Project between Chongqing Local Universities and Institutions of Chinese Academy of Sciences, Chongqing Municipal Education Commission (Grant No. HZ2021007), the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant No. KJZD-M201900502), the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant Nos. KJQN202200557, KJQN202300525), the National Natural Science Foundation of China (Grant Nos. 61975003, 61790584, 62025506), and the Chongqing Normal University Fund Project, China (Grant No. 23XLB003).
    [1]

    唐娟, 廖健宏, 蒙红云 2007 激光与光电子学进展 44 52Google Scholar

    Tang J, Liao J H, Meng H Y 2007 Laser Optoelectron. Prog. 44 52Google Scholar

    [2]

    俞君, 曾智江, 朱三根 2008 红外 29 9Google Scholar

    Yu J, Zeng Z J, Zhu S G 2008 Infrared 29 9Google Scholar

    [3]

    李林, 李正佳, 何艳艳 2005 激光杂志 6 1Google Scholar

    Li L, Li Z J, He Y Y 2005 Laser J. 6 1Google Scholar

    [4]

    Sasaki T, Mori Y, Yoshimura M 2000 Mat. Sci. Eng. R. 30 54Google Scholar

    [5]

    Wang C X, Wang G Y, Hicks A V 2006 Proc. SPIE 6100 19Google Scholar

    [6]

    Hodgson N, Li M, Held A 2003 Proc. SPIE 4977 281Google Scholar

    [7]

    Basov N G, Danilychev V A, Popov Y M 1970 JETP Lett. 12 329

    [8]

    Rhodes C K 1979 Mol. Phys. 1 2Google Scholar

    [9]

    Oka M, Liu L Y, Wiechmann W 1995 IEEE J. Sel. Top. Quant. 1 859Google Scholar

    [10]

    Yap Y K, Inagaki M, Nakajima S 1996 Opt. Lett. 21 1348Google Scholar

    [11]

    Deyra L, Martial I 2014 Opt. Lett. 39 2236Google Scholar

    [12]

    Jewell J L, Harbison J P, Scherer A 1991 IEEE J. Quantum Electron. 27 1332Google Scholar

    [13]

    Crump P, Wenzel H, Erbert G 2012 Proc. SPIE 8241 222Google Scholar

    [14]

    Rahimi-Iman A 2016 J. Optics-UK 18 093003Google Scholar

    [15]

    Guina M, Rantamäki A, Härkönen A 2017 J. Phy. D Appl. Phys. 50 383001Google Scholar

    [16]

    Hastie J E, Morton L G, Dawson M D 2006 J. Opt. Soc. Am. B 1 109

    [17]

    Jennifer E H, Morton L G, Kemp A J 2006 Appl. Phys. Lett. 89 061114Google Scholar

    [18]

    Schwarzbäck T, Kahle H, Eichfelder M 2011 J. Opt. Soc. Korea 1 22Google Scholar

    [19]

    Shu Q Z, Caprara A L, Berger J D 2009 Proc. SPIE 7193 339Google Scholar

    [20]

    Polanik M, Hirlinger A J 2016 Annu. Rep. 8 140

    [21]

    Kaneda Y, Yarborough J M, Li L 2008 Opt. Lett. 33 1705Google Scholar

    [22]

    Meyer J T, Lukowski M L, Hessenius C 2021 Opt. Commun. 499 127255Google Scholar

    [23]

    Zondy J J 1991 Opt. Commun. 81 427Google Scholar

    [24]

    Nightingale J L,Becker R A, Willis P C 1987 Appl. Phys. Lett. 51 716Google Scholar

    [25]

    Smith A V, Armstrong D J, Alford W J 1998 J. Opt. Soc. Am. B 15 122Google Scholar

  • 图 1  (a)增益芯片外延结构简图; (b) DBR反射谱、有源区多量子阱PL谱及激光光谱

    Figure 1.  (a) Schematics of the epitaxial structure of gain chip; (b) the reflection spectrum of DBR, the PL spectrum of the multiple quantum wells in active region, and the laser spectrum.

    图 2  紫外VECSEL实物图

    Figure 2.  Photograph of the ultraviolet VECSEL.

    图 3  紫外VECSEL谐振腔中基频光腔模光斑半径大小随谐振腔位置的变化情况

    Figure 3.  Evolution of the cavity mode radius of fundamental laser with the various position of the ultraviolet VECSEL.

    图 4  基频VECSEL和紫外VECSEL的输出功率

    Figure 4.  Output powers of the IR VECSEL and UV VECSEL.

    图 5  (a) 基频激光的波长调谐图; (b) 倍频激光的波长调谐图; (c) 紫外激光的波长调谐与输出功率图

    Figure 5.  (a) Wavelength tuning of the fundamental laser; (b) wavelength change of the frequency doubled laser; (c) tuning range and powers of the UV output.

    图 6  (a)基频激光的光束质量M2因子, 插图为光强的二维分布图; (b)倍频激光的光束质量M2 因子, 插图为对应的二维光强分布图

    Figure 6.  (a) Beam quality M2 factor of the fundamental laser, the inset shows a 2-dimension distribution of the laser spot; (b) M2 factor of the frequency-doubled laser, and the 2-dimension distribution of the laser intensity is also shown as an inset.

    图 7  紫外VECSEL输出功率的稳定性

    Figure 7.  Stability of the output powers of the ultraviolet VECSEL.

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  • [1]

    唐娟, 廖健宏, 蒙红云 2007 激光与光电子学进展 44 52Google Scholar

    Tang J, Liao J H, Meng H Y 2007 Laser Optoelectron. Prog. 44 52Google Scholar

    [2]

    俞君, 曾智江, 朱三根 2008 红外 29 9Google Scholar

    Yu J, Zeng Z J, Zhu S G 2008 Infrared 29 9Google Scholar

    [3]

    李林, 李正佳, 何艳艳 2005 激光杂志 6 1Google Scholar

    Li L, Li Z J, He Y Y 2005 Laser J. 6 1Google Scholar

    [4]

    Sasaki T, Mori Y, Yoshimura M 2000 Mat. Sci. Eng. R. 30 54Google Scholar

    [5]

    Wang C X, Wang G Y, Hicks A V 2006 Proc. SPIE 6100 19Google Scholar

    [6]

    Hodgson N, Li M, Held A 2003 Proc. SPIE 4977 281Google Scholar

    [7]

    Basov N G, Danilychev V A, Popov Y M 1970 JETP Lett. 12 329

    [8]

    Rhodes C K 1979 Mol. Phys. 1 2Google Scholar

    [9]

    Oka M, Liu L Y, Wiechmann W 1995 IEEE J. Sel. Top. Quant. 1 859Google Scholar

    [10]

    Yap Y K, Inagaki M, Nakajima S 1996 Opt. Lett. 21 1348Google Scholar

    [11]

    Deyra L, Martial I 2014 Opt. Lett. 39 2236Google Scholar

    [12]

    Jewell J L, Harbison J P, Scherer A 1991 IEEE J. Quantum Electron. 27 1332Google Scholar

    [13]

    Crump P, Wenzel H, Erbert G 2012 Proc. SPIE 8241 222Google Scholar

    [14]

    Rahimi-Iman A 2016 J. Optics-UK 18 093003Google Scholar

    [15]

    Guina M, Rantamäki A, Härkönen A 2017 J. Phy. D Appl. Phys. 50 383001Google Scholar

    [16]

    Hastie J E, Morton L G, Dawson M D 2006 J. Opt. Soc. Am. B 1 109

    [17]

    Jennifer E H, Morton L G, Kemp A J 2006 Appl. Phys. Lett. 89 061114Google Scholar

    [18]

    Schwarzbäck T, Kahle H, Eichfelder M 2011 J. Opt. Soc. Korea 1 22Google Scholar

    [19]

    Shu Q Z, Caprara A L, Berger J D 2009 Proc. SPIE 7193 339Google Scholar

    [20]

    Polanik M, Hirlinger A J 2016 Annu. Rep. 8 140

    [21]

    Kaneda Y, Yarborough J M, Li L 2008 Opt. Lett. 33 1705Google Scholar

    [22]

    Meyer J T, Lukowski M L, Hessenius C 2021 Opt. Commun. 499 127255Google Scholar

    [23]

    Zondy J J 1991 Opt. Commun. 81 427Google Scholar

    [24]

    Nightingale J L,Becker R A, Willis P C 1987 Appl. Phys. Lett. 51 716Google Scholar

    [25]

    Smith A V, Armstrong D J, Alford W J 1998 J. Opt. Soc. Am. B 15 122Google Scholar

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Publishing process
  • Received Date:  07 December 2023
  • Accepted Date:  08 January 2024
  • Available Online:  19 February 2024
  • Published Online:  20 April 2024
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