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高压偏振拉曼光谱（High-pressure Polarized Raman Spectroscopy,HPRS）是一种能够定量提取拉曼张量元随压力变化的光谱表征方法．通过调整金刚石对顶砧（DAC）的入射光与散射光的偏振方向，测量角度依赖的高压拉曼光谱强度．本文构建了一种基于DAC的原位偏振拉曼装置，在背散射配置中引入半波片，选取常用于单晶Si（100）和二维薄片Te（001）为研究对象，实现样品静止条件下的偏振角连续扫描． HPRS分析显示，Si（100）的F2g拉曼活性模的拉曼张量元在低于12 GPa压力下呈反比例函数式减小，反映了Si在无相变前提下的非线性压力响应； Te（001）的面内各向异性随压力的增加而增强且部分模偏离理想形式，其中A1拉曼活性模的张量元比值b/c/在~1.5 GPa附近出现由降转升的拐点，与基于输运实验测量的电子结构相变点相近（~2GPa）．本研究构建了HPRS原位测量与分析框架，实现了从基准体系验证到物质的应用，表明HPRS对微弱对称性扰动与电子结构重排的灵敏响应，为判断物质在高压下的电极化性、键合特性等提供直接、可量化的证据补充．High-pressure polarized Raman spectroscopy (HPRS) refers to a spectroscopic technique in which a diamond anvil cell (DAC) is employed as the pressure-generating device, and the polarization orientations of both incident and scattered light are systematically controlled to measure the angular dependence of Raman spectral intensities under varying pressures. This enables the quantitative extraction of the pressure evolution of Raman tensor elements. In this study, we developed an in-situ high-pressure polarized Raman setup based on a backscattering configuration incorporating a half-wave plate, allowing continuous variation of the polarization angle without rotating the sample. Quantitative determination of Raman tensor elements was achieved through polar coordinate fitting of the measured intensity profiles. Singlecrystal Si(100), commonly used for Raman calibration, and two-dimensional Te(110) flakes exhibiting in-plane anisotropy were selected as model systems for investigation. Our results show that over the pressure range of 0~12 GPa, the angular distribution pattern and periodicity of Si(100) remain unchanged, while the main Raman peak exhibits an approximately linear blue shift with increasing pressure. The Raman tensorelement associated with the active mode decreases according to an inverse power-law function, reflecting the response of the polarizability derivative to volume compression in the absence of phase transitions. For two-dimensional Te(110), the in-plane anisotropy increases with pressure, accompanied by deviations of certain modes from ideal symmetry-predicted behavior. Notably, the ratio of Raman tensor elements displays an inflection point near 1.5 GPa, transitioning from a decreasing to an increasing trend, with clearly observable changes in polarized Raman responses within the 1.2~1.6 GPa range. It is in close proximity to the electronic structure phase transition point determined from transport experiments (~2 GPa). Collectively, studies on single-crystal Si(100) and two-dimensional Te(110) demonstrate that HPRS is a robust in-situ method for probing symmetry evolution, anisotropic behavior, and incipient electronic rearrangements in materials under compression.
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