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In this work, Ta/BaTiO3/Al2O3 multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology. Obvious resistive switching performance can be observed by increasing the compliance current. Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO3/Al2O3. The reproducible and stable resistive switching behaviors in Ta/BaTiO3/Al2O3/ITO device at Icc = 10–2 A are reported. The results show that no obvious degradation is found after 365 successive cycles tests.
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Keywords:
- resistive switching /
- oxygen vacancies migration /
- compliance current /
- Joule heating
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图 1 (a) Ta/BaTiO3/Al2O3/ITO器件XRD图, 插图为器件结构示意图; (b)器件截面示意图; (c) Ta电极表面SEM扫描图片, 插图为EDS原子百分比分析结果
Fig. 1. (a) XRD pattern of Ta/BaTiO3/Al2O3/ITO device, the inset shows the schematic diagram of the device; (b) SEM cross-sectional image of the device; (c) SEM image of Ta surface, the insert is the result of EDS analysis.
图 2 (a) Ta/BaTiO3/Al2O3/ITO器件在Icc = 10–3, 5 × 10–3, 10–2 A下的电阻开关; (b) 50个器件中部分器件的I-V曲线图
Fig. 2. (a) The RS behaviors of the Ta/BaTiO3/Al2O3/ITO device with Icc = 10–3, 5 × 10–3, 10–2 A; (b) I-V characteristic curves for some cells of the fifty devices.
图 3 Ta/BaTiO3/Ta器件的I-V特性, 插图为器件结构示意图
Fig. 3. The I-V curves measured for the Ta/BaTiO3/Ta device, the inset is schematic figure for stacked structures of the device.
图 4 Icc = 10–2 A, Ta/BaTiO3/Al2O3/ITO器件相关特征的拟合结果 (a) I-V; (b) I-V2 (高偏压区域);
Fig. 4. Icc = 10–2 A, the fitting result for characteristics of the Ta/BaTiO3/Al2O3/ITO device: (a) I-V; (b) I-V2 (high-voltage region)
图 5 Ta/BaTiO3/Al2O3/ITO器件中电阻开关的原理示意图
Fig. 5. The schematic diagrams of the RS in the Ta/BaTiO3/Al2O3/ITO device.
图 6 (a) Icc = 10–2 A, Ta/BaTiO3/Al2O3/ITO器件连续循环100圈后LRS和HRS变化情况; (b) 器件循环365圈中RS现象的随机选取
Fig. 6. (a) The resistance evolution of HRS and LRS for the Ta/BaTiO3/Al2O3/ITO device with Icc = 10–2 A; (b) the continuous endurance measurements for the device.
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[1] Hu Z Q, Li Q, Li M Y, Wang Q W, Zhu Y D, Zhao X Z, Liu Y, Dong S X 2013 Appl. Phys. Lett. 102 102901
Google Scholar
[2] Zhou G D, Sun B, Hu X, Sun L, Zou Z, Xiao B, Qiu W, Wu B, Li J, Han J, Liao L, Xu C, Xiao G, Xiao L, Cheng J, Zheng S, Wang L, Song Q, Duan S 2021 Adv. Sci. 8 2003765
Google Scholar
[3] Sun B, Zhao W X, Liu Y H, Chen P 2015 Funct. Mater. Lett. 8 1550010
Google Scholar
[4] Wang J S, Liang D D, Wu L C, Li X P, Chen P 2018 Solid State Commun. 275 8
Google Scholar
[5] Lee J S, Lee S, Noh T W 2015 Appl. Phys. Rev. 2 031303
Google Scholar
[6] Lacaita A L, Wouters D J 2008 Phys. Stat. Sol. A 205 2281
[7] Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, A Petraru A, Hwang C S 2012 Rep. Prog. Phys. 75 076502
Google Scholar
[8] Kumar P, Maikap S, Ginnaram S, Qiu J T, Jana D, Chakrabarti S, Samanta S, S Singh S, Roy A, Jana S 2017 J. Electrochem. Soc. 164 B127
Google Scholar
[9] Petzold S, Zintler A, Eilhardt R, Piros E, Kaiser N, Sharath S U, Vogel T, Major Má, McKenna K P, Molina-Luna L, Alff L 2019 Adv. Electron. Mater. 5 1900484
[10] Hsieh W K, Lam KT, Chang S J 2015 Mater. Sci. Semicon. Proc. 35 30
Google Scholar
[11] Scott J C, Bozano L D 2007 Adv. Mater. 19 1452
Google Scholar
[12] Lai R L, Wei M L, Wang J B, Zhou K, Qiu X Y 2021 J. Phys. D: Appl. Phys. 54 015101
Google Scholar
[13] Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
Google Scholar
[14] Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou Y N, Wu Y A 2020 ACS Appl. Mater. Inter. 12 54243
Google Scholar
[15] Sun B, Zhou G D, Guo T, Zhou Y N, Wu Y A 2020 Nano Energy 75 104938
Google Scholar
[16] Tsai T M, Lin C C, Chen W C, Wu C H, Yang C C, Tan Y F, Wu P Y, Huang H C, Zhang Y C, Sun L C, Chou S Y 2020 J. Alloy. Compd. 826 154126
Google Scholar
[17] Saylan S, Aldosari H M, Humood K, Jaoude M A, Ravaux F, Mohammad B 2020 Sci. Rep-UK 10 19541
Google Scholar
[18] Chen R, Hu W, Zou L, Xie W, Li B, Bao D 2014 Appl. Phys. Lett. 104 242111
Google Scholar
[19] Choi H H, Paik S H, Kim Y, Kim M, Kang Y S, Lee S S, Jho J Y, Park J H 2021 J. Ind. Eng. Chem. 94 233
Google Scholar
[20] Strachan J P, Strukov D B, Borghetti J, Yang J J, Medeiros-Ribeiro G, Williams R S 2011 Nanotechnology 22 254015
Google Scholar
[21] Tang Y, Zhang X, Lu Y, Chen P 2021 Functional Mater. Lett. 14 2150025
Google Scholar
[22] Liu C F, Tang X G, Wang L Q, Tang H, Jiang Y P, Liu Q X, Li W H, Tang Z H 2019 Nanomaterials 9 1124
Google Scholar
[23] Hu C, Wang Q, Bai S, Xu M, He D, Lyu D, Qi J 2017 Appl. Phys. Lett. 110 073501
Google Scholar
[24] Kim H D, Kim S, Yun M J 2018 J. Alloy. Compd. 742 822
Google Scholar
[25] Zhou G D, Duan S, Li P, et al. 2018 Adv. Electron. Mater. 1700567
[26] Liu H C, Tang X G, Liu Q X, Jiang Y P, Li W H, Guo X B, Tang Z H 2020 Ceram. Int. 46 21196
Google Scholar
[27] Pan X, Shuai Y, Wu C, Luo W, Sun X, Zeng H, Guo H, Yuan Y, Zhou S, Böttger R, Cheng H, Zhang J, Zhang W, Schmidt H 2019 Solid State Ionics 334 1
Google Scholar
[28] Lü W, Li C, Zheng L, Xiao J, Lin W, Li Q, Wang X R, Huang Z, Zeng S, Han K, Zhou W, Zeng K, Chen J, Ariando, Cao W, Venkatesan T 2017 Adv. Mater. 29 1606165
Google Scholar
[29] Wei L J, Yuan Y, Wang J, Tu H Q, Gao H Q, You B, Du J 2017 Phys. Chem. Chem. Phys. 19 11864
Google Scholar
[30] Wang Y H, Zhao K H, Shi X L, Xie G L, Huang S Y, Zhang L W 2013 Appl. Phys. Lett. 103 031601
Google Scholar
[31] Razi P M, Gangineni R B 2019 Thin Solid Films 685 59
Google Scholar
[32] Wang G, Hu L, Xia Y, Li Q, Xu Q 2020 J. Magn. Magn. Mater. 493 165728
Google Scholar
[33] Chen Y T, Chang T C, Yang P C, Huang J J, Tseng H C, Huang H C, Yang J B, Chu A K, Gan D S, Tsai M J, Sze S M 2013 IEEE Electr. Device Lett. 34 226
Google Scholar
[34] Liu Y D, Hu C Z, Wang J J, Zhong N, Xiang P H, Duan C G 2020 J. Mater. Chem. C. 8 5815
Google Scholar
[35] Sharath S U, Vogel S, Molina-Luna L, Hildebrandt E, Wenger C, Kurian J, Duerrschnabel M, Niermann T, Niu G, Calka P, Lehmann M, Kleebe H J, Schroeder T, Alff L 2017 Adv. Funct. Mater. 27 1700432
Google Scholar
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