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利用中国散裂中子源大气中子辐照谱仪, 对某款16 nm FinFET工艺制造的近存计算架构人工智能AI芯片进行了大气中子单粒子效应辐照测试研究. 辐照测试中, 在累积中子注量为1.51×1010 n/cm2 (1 MeV以上)情况下, 共探测到5类共计35个软错误, 尤其是探测到不同于传统冯诺伊曼架构芯片单粒子效应的计算与存储单元同时发生单粒子效应新现象. 基于所探测到的两类功能单元同时单粒子效应新现象, 结合蒙特卡罗仿真模拟, 初步给出了近存计算架构AI芯片内物理布局上, 核心功能单元间可降低同时发生单粒子效应的安全间距建议. 该研究为进一步探究非传统冯诺伊曼架构芯片单粒子效应提供了参考与借鉴.For the near-memory computing architecture AI chip manufactured by using 16 nm FinFET technology, atmospheric neutron single event effect irradiation tests are conducted for the first time in China by using the atmospheric neutron irradiation spectrometer (ANIS) at the China Spallation Neutron Source. During the irradiation, the YOLOV5 algorithm neural network running on the AI chip is used for real-time detection of target objects, including mice, keyboard, and luggage. The purpose of the test is to investigate the new single event effect that may occur on near-memory computing architecture AI chip. Finally, at an accumulated neutron fluence of 1.51×1010 n·cm–2 (above 1 MeV), a total of 35 soft errors are detected in 5 categories. Particularly noteworthy is the observation of a new finding, where both computing and memory units experience single event effects simultaneously, which is different from the traditional von Neumann architecture chips. Based on the single event effects that occur simultaneously in these two units, combined with Monte Carlo simulation, a preliminary estimation is made of the physical layout distance between the computing unit and the memory unit on the chip. Furthermore, suggestions are proposed to simultaneously reduce the risk of single event effect in multi cells. This study provides valuable reference and insights for further exploring the single event effects in non-traditional von Neumann architecture chips.
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Keywords:
- near memory computing /
- AI chip /
- spallation neutron source /
- atmospheric neutron /
- single event effect
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图 2 待测芯片数据流架构及AI应用示意图
Fig. 2. Diagram of data flow architecture and AI applications for the test chip.
图 4 辐照实验所用中子能谱, 其中ANIS为实验所用能谱, JEDEC为参考能谱
Fig. 4. Neutron spectrum applied in the irradiation test, ANIS with the utilized spectrum during irradiation test, and the JEDEC with the referred.
图 8 大气中子入射硅半导体所产生的主要次级粒子
Fig. 8. Secondary particles of atmospheric neutron striking silicon.
表 1 探测到的不同类型单粒子效应
Table 1. Detected kinds of single event effect.
软错误 数量 SEU/MEM 30 SEU/COMP 2 SEU/MEM+COMP 1 Timeout 1 Process-killed 1 
下载: 导出CSV
表 2 存储单元单粒子效应
Table 2. Single event effect in memory cell.
翻转单元 数量 翻转单元 数量 1 3 10 8 2 5 11 1 4 2 13 1 8 10
下载: 导出CSV
表 3 不同单元效应截面和软错误率
Table 3. Cross section and soft error rate of different cells.
单元 单粒子效应截面/(10–10 cm2) 软错误率/FIT 存储 20.5 30.40 计算 1.99 2.94 控制 1.32 1.96
下载: 导出CSV
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[1] 周正, 黄鹏, 康晋锋 2022 71 148507
Google Scholar
Zhou Z, Huang P, Kang J F 2022 Acta Phys. Sin. 71 148507
Google Scholar
[2] 郭昕婕, 王光燿, 王绍迪 2023 电子与信息学报 45 1888
Google Scholar
Guo X J, Wang G Y, Wang S D 2023 J. Electron. Inf. Technol. 45 1888
Google Scholar
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Google Scholar
[4] 康旺, 寇竞, 赵巍胜 2024 中国科学: 信息科学 54 16
Google Scholar
Kang W, Kou J, Zhao W S 2024 Sci. Sin. Inf. 54 16
Google Scholar
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Google Scholar
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Google Scholar
Liu W Q, Chen K, Wu B, Deng E Y, Wang Y, Gong Y, Cui Y J, Wang C H 2024 Sci. Sin. Inf. 54 34
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[7] Wilfried H, Anand R, Kaushik R, Bhaswar C, Charudatta M P, Cheng W, Supratik G 2023 Adv. Mater. 35 2204944
Google Scholar
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Wang X, Zhang F Q, Chen W, Guo X Q, Ding L L, Luo Y H 2020 Acta Phys. Sin. 69 162901
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Wang X, Zhang F Q, Chen W, Guo X Q, Ding L L, Luo Y H 2019 Acta Phys. Sin. 68 052901
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Google Scholar
Cao S, Yin W, Zhou B, Hu Z L, Shen F, Yi T C, Wang S L, Liang T J 2024 Acta Phys. Sin. 73 092501
Google Scholar
[14] Wang H B, Wang Y S, Xiao J H, Wang S L, Liang T J 2021 IEEE Trans. Nucl. Sci. 68 394
Google Scholar
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Google Scholar
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Google Scholar
[17] Jordan D A, Jennings C L, Michael J W 2018 IEEE Radiation Effects Data Workshop (REDW) Waikoloa, HI, USA
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Google Scholar
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Google Scholar
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Google Scholar
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