Enhancement of tandem organic light-emitting diode performance by inserting an ultra-thin Ag layer in charge generation layer

Tao Hong; Gao Dong-Yu; Liu Bai-Quan; Wang Lei; Zou Jian-Hua; Xu Miao; Peng Jun-Biao

doi:10.7498/aps.66.017302

Abstract

White organic light-emitting diodes (WOLEDs) have attracted both scientific and industrial interest in the solidstate lighting and display applications due to their exceptional merits,such as high luminances,low power consumptions, high efficiencies,fast response times,wide-viewing angles,flexibilities and simple fabrications.The power efficiency of WOLED has been step-by-step improved in the last 20 years,however,the lifetime of WOLED is still unsatisfactory, which greatly restricts the further development of WOLED.In general,the tandem structure can be used to obtain high-efficiency and long-lifetime WOLED.One of the most important features of this kind of structure is that the different-colors emitting units can be connected by the charge generation layer.Therefore,the key to achieving a highperformance tandem device is how to design the charge generation layer.In this paper,we first develop a tandem green OLED by using an effective charge generation layer with an ultra-thin Ag layer between 4,7-diphenyl-1,10-phenanthroline:CsCO3 and hexaazatriphenylenehexacabonitrile,achieving high luminance,low voltage,high efficiency and long lifetime.The green tandem device with ultra-thin Ag layer (device C) obtains a highest luminance of 290000 cd/m2,which is 1.4 and 1.9 times higher than those of the tandem devices without ultra-thin Ag (device B) and singleunit device (device A),respectively.The driving voltage of device C is 7.2 V at 1000 cd/m2,1.4 V lower than that of device B.Besides,the maximum current efficiency of device C is 60.4 cd/A,which is 2.4% and 220% higher than those of device B (59 cd/A) and device A (18.7 cd/A),respectively.The power efficiency of device C is 26 lm/W,which is 21% higher than that of device B (21.5 lm/W).Moreover,the lifetime (T80) of device C reaches 250 h at an initial luminance of 10000 cd/m2,which is nearly 100 times higher than that of device B (2.7 h).Finally,we fabricate a white tandem device with the optimized charge generation layer,achieving a current efficiency and power efficiency of 75.9 cd/A and 36.1 lm/W at 1000 cd/m2,respectively.In addition,the lifetime (T80) is 77 h at an initial luminance of 10000 cd/m2.All the excellent performances are ascribed to the introduction of the ultra-thin Ag layer into the charge generation layer, which can effectively block the charge generation layer from diffusing.This exciting discovery can provide an effective way to design efficient and stable WOLED,which is beneficial to the solid-state lighting and display markets.

Keywords:

Authors and contacts

1.
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;
2.
New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510730, China

Corresponding author: Wang Lei, mslwang@scut.edu.cn;psjbpeng@scut.edu.cn ; Peng Jun-Biao, mslwang@scut.edu.cn;psjbpeng@scut.edu.cn

Funds: Project supported by the National Key Basic Research and Development Program of China（Grant No. 2015CB655004), National Natural Science Foundation of China（Grant Nos. 61574061, 61574062), Science and Technology Program of Guangdong Province, China（Grant Nos. 2014B090916002, 2015B090915001, 2015B090914003), Special Support Program of Guangdong Province, China（Grant No. 2014TQ01C321), China Post-Doctoral Science Foundation（Grant Nos. 2015M582380, 2016M590779) and Pear River ST Nova Program of Guangzhou, China（Grant Nos. 201506010015, 201505051412482).

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[39]	Fan C, Yang C, Chem 2014 Soc. Rev. 43 6439
[40]	Yang X, Zhou G, Wong W Y 2015 Chem. Soc. Rev. 44 8484

Cited By

[1]	Liu B Q, Gao D Y, Wang J B, Zou J H, Peng J B 2015 Acta Phys.-Chim. Sin. 31 1823(in Chinese)[刘佰全, 高栋雨, 王剑斌, 邹建华, 彭俊彪2015物理化学学报31 1823]
[2]	Liu B Q, Tao H, Su Y J, Gao D Y, Lan L F, Zou J H, Peng J B 2013 Chin. Phys. B 22 077303
[3]	Liu B Q, Luo D X, Zou J H, Gao D Y, Ning H L, Wang L, Peng J B, Cao Y 2015 J. Mater. Chem. C 3 6359
[4]	Nishimoto T, Yasuda T, Lee S Y, Kondo R, Adachi C 2014 Mater. Horiz. 1 264
[5]	Zhang D, Duan L, Zhang Y, Cai M, Zhang D, Qiu Y 2015 Light Sci. Appl. 4 232
[6]	Meyer J, Shu A, Kröger M, Kahn A 2010 Appl. Phys. Lett. 96 133308
[7]	Wang Q, Ma D G 2010 Chem. Soc. Rev. 39 2387
[8]	Kanno H, Giebink N C, Sun Y, Forrest S R 2006 Appl. Phys. Lett. 89 023503
[9]	Zhang H M, Dai Y F, Ma D G 2008 J. Phys. D:Appl. Phys. 41 102006
[10]	Chiba T, Pu Y J, Kido J 2015 Adv. Mater. 27 4681
[11]	Hofle S, Bernhard C, Bruns M, Kubel C, Scherer T, Lemmer U, Colsmann A 2015 ACS Appl. Mater. Interfaces 7 8132
[12]	Ran G Z, Jiang D F, Kan Q, Chen H D 2010 Appl. Phys. Lett. 97 233304
[13]	Chen Y H, Chen J S, Ma D G, Yan D H, Wang L X, Zhu F R 2011 Appl. Phys. Lett. 98 243309
[14]	Liu J, Shi X D, Wu X K, Wang J, He G F 2015 J. Disp. Technol. 11 4
[15]	Kanno H, Holmes R J, Sun Y, Kena-Cohen S, Forrest S R 2006 Adv. Mater. 18 339
[16]	Chen C W, Lu Y J, Wu C C, Wu E H, Yang Y 2005 Appl. Phys. Lett. 87 241121
[17]	Hamwi S, Meyer J, Kroger M, Winkler T, Witte M, Riedl T, Kahn A, Kowalsky W 2010 Adv. Funct. Mater. 20 1762
[18]	Zhou D Y, Shi X B, Liu Y, Gao C H, Wang K, Liao L S 2014 Org. Electron. 15 3694
[19]	Chen C W, Lu Y J, Wu C C, Wu E H, Chu C C, Yang Y 2005 Appl. Phys. Lett. 87 241121
[20]	Sun H D, Chen Y H, Chen J S, Ma D G 2016 IEEE J. Sel. Top. Quant. Electron. 22 1
[21]	Meyer J, Kroger M, Hamwi S, Gnam F, Riedl T, Kowalsky W, Kahn A 2010 Appl. Phys. Lett. 96 193302
[22]	Liao L S, Klubek K P, Tang C W 2004 Appl. Phys. Lett. 84 167
[23]	Leem D S, Lee J H, Kim J J, Kang J W 2008 Appl. Phys. Lett. 93 103304
[24]	Lee S H, Lee J H, Kim K H, Yoo S J, Kim T G, Kim J W, Kim J J 2012 Org. Electron. 13 2346
[25]	Kim D H, Kim T W 2014 Org. Electron. 15 3452
[26]	Qi X F, Slootsky M, Forrest S 2008 Appl. Phys. Lett. 93 193306
[27]	Liao L S, Klubek K P 2008 Appl. Phys. Lett. 92 223311
[28]	Law C W, Lau K M, Fung M K, Chan M Y, Wong F L, Lee C S, Lee S T 2006 Appl. Phys. Lett. 89 133511
[29]	Wang Y P, Mi B X, Gao Z Q, Guo Q, Wang W 2011 Acta Phys. Sin. 60 087808 （in Chinese)[王旭鹏, 密保秀, 高志强, 郭晴, 黄维2011 60 087808]
[30]	Zhou D Y, Zu F S, Zhang Y J, Shi X B, Aziz H, Liao L S 2014 Appl. Phys. Lett. 105 083301
[31]	Sun H D, Guo Q X, Yang D Z, Chen Y H, Chen J S, Ma D G 2015 ACS Photon. 2 271
[32]	Zhao Y B, Tan S T, Demir H V, Sun X W 2015 Org. Electron. 23 70
[33]	Diez C, Reusch T C G, Lang E, Dobbertin T, Brtting W 2012 J. Appl. Phys. 111 103107
[34]	Zhou D Y, Siboni H Z, Wang Q, Liao L S, Aziz H 2014 J. Appl. Phys. 116 223708
[35]	Yu J N, Lin H, Tong L, Li C, Zhang H, Zhang J H, Wang Z X, Wei B 2013 Phys. Status Solidi A 210 408
[36]	Liu B Q, Xu M, Wang L, Tao H, Su Y J, Gao D Y, Lan L F, Zou J H, Peng J B 2014 Nano-Micro Lett. 6 335
[37]	Liu B Q, Xu M, Tao H, Su Y J, Gao D Y, Zou J H, Lan L F, Peng J B 2014 Chin. Sci. Bull. 59 3090
[38]	Liu B Q, Wang L, Gao D Y, Xu M, Zhu X H, Zou J H, Lan L F, Ning H L, Peng J B, Cao Y 2015 Mater. Horiz. 2 536
[39]	Fan C, Yang C, Chem 2014 Soc. Rev. 43 6439
[40]	Yang X, Zhou G, Wong W Y 2015 Chem. Soc. Rev. 44 8484

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Vol. 66, Issue 1 - 2017-01-05

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