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In this paper, an InP-based mesa-structure uni-traveling-carrier photodetector is designed. By adopting Gaussian doping scheme in the absorption layer and incorporating an appropriate cliff layer, high speed and high saturation current characteristics are both achieved simultaneously. For the device with a 14 μm2 active area, the simulated results indicate that the bandwidth reaches 58 GHz and DC saturation current increases up to 158 mA at a reverse bias of 2 V. Under high optical injection, the bandwidth degradation and current saturation are studied, which are caused by energy band shift and electric field collapse.
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Keywords:
- uni-traveling-carrier photodetector /
- uni-traveling-carrier /
- high speed /
- saturation current
[1] Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Tech. Dig. 13 166
[2] Jun D H, Jang J H, Adesida I, Song J I 2006 Jpn. J. Appl. Phys. 45 3475
[3] Wang X, Duan N, Chen H, Campbell J C 2007 IEEE Photon. Technol. Lett. 19 1272
[4] Chtioui M, Lelarge F, Enard A, Pommereau F, Carpentier D, Marceaux A, Dijk F V, Achouche M 2012 IEEE Photon. Technol. Lett. 24 318
[5] Zhang R, Hraimel B, Li X, Zhang P, Zhang X 2013 Opt. Express 21 6943
[6] Shi J W, Kuo F M, Bowers J E 2012 IEEE Photon. Technol. Lett. 24 533
[7] Li Z, Pan H, Chen H, Beling A, Campbell J C 2010 IEEE J. Quantum Electron. 46 626
[8] Guo J C, Zuo Y H, Zhang Y, Zhang L Z, Cheng B W, Wang Q M 2010 Acta Phys. Sin. 59 4524 (in Chinese) [郭建川, 左玉华, 张云, 张岭梓, 成步文, 王启明 2010 59 4524]
[9] Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 61 138501]
[10] Li C, Xue C L, Li C B, Liu Z, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 118503
[11] Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 Jpn. J. Appl. Phys. 36 6263
[12] Ishibashi T, Furuta T, Fushimi H, Ito H 2001 Ishibashi T, Furuta T, Fushima H, Ito H 2001 Proceedings of SPIE San Jose, USA, Jan. 19-25, 2001 p469
[13] Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. E83-C 938
[14] Pan H, Wang X, Beling A, Chen H, Campbell J C 2007 International Conference on Numerical Simulation of Optoelectronic Devices Newark, USA Sep. 24-28, 2007 p79
[15] Shi T, Xiong B, Sun C, Luo Y 2011 Chin. Opt. Lett. 9 082302
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[1] Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Tech. Dig. 13 166
[2] Jun D H, Jang J H, Adesida I, Song J I 2006 Jpn. J. Appl. Phys. 45 3475
[3] Wang X, Duan N, Chen H, Campbell J C 2007 IEEE Photon. Technol. Lett. 19 1272
[4] Chtioui M, Lelarge F, Enard A, Pommereau F, Carpentier D, Marceaux A, Dijk F V, Achouche M 2012 IEEE Photon. Technol. Lett. 24 318
[5] Zhang R, Hraimel B, Li X, Zhang P, Zhang X 2013 Opt. Express 21 6943
[6] Shi J W, Kuo F M, Bowers J E 2012 IEEE Photon. Technol. Lett. 24 533
[7] Li Z, Pan H, Chen H, Beling A, Campbell J C 2010 IEEE J. Quantum Electron. 46 626
[8] Guo J C, Zuo Y H, Zhang Y, Zhang L Z, Cheng B W, Wang Q M 2010 Acta Phys. Sin. 59 4524 (in Chinese) [郭建川, 左玉华, 张云, 张岭梓, 成步文, 王启明 2010 59 4524]
[9] Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 61 138501]
[10] Li C, Xue C L, Li C B, Liu Z, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 118503
[11] Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 Jpn. J. Appl. Phys. 36 6263
[12] Ishibashi T, Furuta T, Fushimi H, Ito H 2001 Ishibashi T, Furuta T, Fushima H, Ito H 2001 Proceedings of SPIE San Jose, USA, Jan. 19-25, 2001 p469
[13] Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. E83-C 938
[14] Pan H, Wang X, Beling A, Chen H, Campbell J C 2007 International Conference on Numerical Simulation of Optoelectronic Devices Newark, USA Sep. 24-28, 2007 p79
[15] Shi T, Xiong B, Sun C, Luo Y 2011 Chin. Opt. Lett. 9 082302
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