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A double rectangular comb slow-wave structure with a round beam channel is proposed as the slow-wave structure (SWS) circuit of a broad bandwidth traveling-wave tube at W-band. The "cold" characteristic of the SWS and the transmission of the input/output structure are simulated and optimized in this paper. The results show that this circuit has a very broad bandwidth, and that the impedance of the structure with round beam channel can be the same as that of sheet beam by modifying the distance between the double vanes and the radius of the beam channel. Moreover, the transmission of the whole tube is so good that the VSWR can be kept at below 2 in a very broad bandwidth after optimization. The output performance is investigated by both the big signal theory MTSS and the PIC code MAFIA, and they have the same results that in 10 GHz bandwidth the output power is over 40 W and the gain is above 29 dB under a driven power of 50 mW.
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Keywords:
- double rectangular comb slow-wave structure /
- W band /
- broad bandwidth /
- traveling-wave tube
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[2] Liao F J 2003 Acta Electronica Sin. 31 1361 (in Chinese) [廖复疆 2003 电子学报 31 1361]
[3] Linde G J, Ngo M T, Danly B G 2008 IEEE Transactions on Aerospace and Electronic Systems 44 1102
[4] Liang D W 1999 Telecommunication Engineering 6 93 (in Chinese) [梁德文 1999 电讯技术 6 93]
[5] Kory C L, Read M E, Ives R L 2009 IEEE Trans. Electron Devices 56 713
[6] Theiss A J, Meadows C L, Freeman R 2010 IEEE Trans. Plasma Sci. 38 1239
[7] Gao P, Booske J H, Yang Z H 2010 Acta Phys. Sin. 59 8484 ( in Chinese) [高鹏, Booske J H, 杨中海 2010 59 8484]
[8] Lu Z G, Wei Y Y, Gong Y B 2007 Acta Phys. Sin. 56 3318 (in Chinese) [路志刚, 魏彦玉, 宫玉彬 2007 56 3318]
[9] Kory C, Ives L, Read M 2005 13th Int. Conf.Terahertz Electron, Williamsburg, pp.85---86
[10] Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730
[11] Ives R L 2004 IEEE Trans. Plasma Sci. 32 1277
[12] Smirnova E I, Carlsten B E, Earley L M 2008 IEEE Trans. Plasma Sci. 36 763
[13] Feng J J, Hu Y F, Cai J 2010 IEEE International Vacuum Electronics Conference California, USA, pp.501---502
[14] Wang Z C, Lu D J, Wang L 2008 Journal of Electronics and Information Technology 30 2792 (in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]
[15] Zhu Y P 1997 Radar and Ecm 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]
[16] Shin Y M, Barnett L R, Gamzina D 2009 Appl. Phys. Lett. 95 181505
[17] Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 221504
[18] Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices 56 706
[19] Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501
[20] Tang T, Gong H R, Gong Y B 2010 High Power Laser and Particle Beam 5 1103 (in Chinese) [唐涛, 巩华荣, 宫玉斌 2010 强激光与粒子束 5 1103]
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[1] Gerum W, Lippert G, Malzahn P 2001 IEEE Trans. Electron Devices 48 72
[2] Liao F J 2003 Acta Electronica Sin. 31 1361 (in Chinese) [廖复疆 2003 电子学报 31 1361]
[3] Linde G J, Ngo M T, Danly B G 2008 IEEE Transactions on Aerospace and Electronic Systems 44 1102
[4] Liang D W 1999 Telecommunication Engineering 6 93 (in Chinese) [梁德文 1999 电讯技术 6 93]
[5] Kory C L, Read M E, Ives R L 2009 IEEE Trans. Electron Devices 56 713
[6] Theiss A J, Meadows C L, Freeman R 2010 IEEE Trans. Plasma Sci. 38 1239
[7] Gao P, Booske J H, Yang Z H 2010 Acta Phys. Sin. 59 8484 ( in Chinese) [高鹏, Booske J H, 杨中海 2010 59 8484]
[8] Lu Z G, Wei Y Y, Gong Y B 2007 Acta Phys. Sin. 56 3318 (in Chinese) [路志刚, 魏彦玉, 宫玉彬 2007 56 3318]
[9] Kory C, Ives L, Read M 2005 13th Int. Conf.Terahertz Electron, Williamsburg, pp.85---86
[10] Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730
[11] Ives R L 2004 IEEE Trans. Plasma Sci. 32 1277
[12] Smirnova E I, Carlsten B E, Earley L M 2008 IEEE Trans. Plasma Sci. 36 763
[13] Feng J J, Hu Y F, Cai J 2010 IEEE International Vacuum Electronics Conference California, USA, pp.501---502
[14] Wang Z C, Lu D J, Wang L 2008 Journal of Electronics and Information Technology 30 2792 (in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]
[15] Zhu Y P 1997 Radar and Ecm 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]
[16] Shin Y M, Barnett L R, Gamzina D 2009 Appl. Phys. Lett. 95 181505
[17] Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 221504
[18] Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices 56 706
[19] Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501
[20] Tang T, Gong H R, Gong Y B 2010 High Power Laser and Particle Beam 5 1103 (in Chinese) [唐涛, 巩华荣, 宫玉斌 2010 强激光与粒子束 5 1103]
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