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After low pressure fluorine plasma ecthing and oxygen ion passivation, a crystallized layer composed of SiO2 nano-crystal grains is observed in an amorphous fused silica surface. The depth of crystallized layer is at least several hundreds nanometers. Fluorine and carbon ion are generated from Ar/CF4 by the method of electron cyclotron resonance (ECR). F ion breaks Si-O band of initial silica surface layer and releases O ion. Carbon ion combines with oxygen ion, and turns into CO2, and SiF4 is generated from fluorine and silicon. After initial surface layer is removed, unsaturated Si atom remains. Si dangling bond recombines with new O ion and then creates crystallized -cristobalite nano-crystal grains under a high temperature.
[1] Campbell J H, Hawley-Fedder R A, Stolz C J, Menapace J A, Borden M R, Whitman P K, Yu J, Runkel M J, Riley M O, Feit M D, Hackel R P 2004 Proc. SPIE 5341 84
[2] Hua J R, Zu X T, Li L, Xiang X, Chen M, Jiang X D, Yuan X D, Zheng W G 2010 Acta Phys. Sin. 59 2519 (in Chinese) [花金荣, 祖小涛, 李莉, 向霞, 陈猛, 蒋晓东, 袁晓东, 郑万国 2010 59 2519]
[3] Huang J, Jiang X D, Liu H J, Lv H B,Wang H J, Yuan X D, Zheng WG 2010 Acta Phys. Sin. 59 4677 (in Chinese) [黄进, 蒋晓东, 刘红婕, 吕海兵, 王海军, 袁晓东, 郑万国 2010 59 4677]
[4] Wang F R, Huang J, Liu H J, Zhou X D,Jiang X D, Wu W D, Zheng W G 2010 Acta Phys. Sin. 59 5122 (in Chinese) [王凤蕊, 黄进, 刘红婕, 周信达, 蒋晓东, 吴卫东, 郑万国 2010 59 5122]
[5] Liang F, Sun Q, Gingras D, Vallée R, Chin S R 2010 Appl. Phys. Lett. 96 101903
[6] Ferris K F, Chick L A, Exarhos G J, Risser S M 1998 Proc. SPIE 3244 142
[7] Genin F Y, Stolz C J 1996 Proc. SPIE 2870 439
[8] Kozlowski M R, Tench R J, Chow R, Sheehan L M 1994 Proc. SPIE 2253 743
[9] Trnch R J, Kozlowski M R, Chow R 1994 Proc. SPIE 2253 596
[10] Kozlowski M R, Carr J, Hutcheon I, Torres R, Sheehan L, Camp D, Yan M 1998 Proc. SPIE 3244 365
[11] Brusasco R M, Penetrante B M, Peterson J E, Maricle S M, Menapace J A 2002 Proc. SPIE 4679 48
[12] Genin F Y, Stolz C J, Kozlowski M R 1997 Proc. SPIE 2966 273
[13] Fanara C, Shore P, Nicholls J R, Lyford N, Sommer P, Fiske P 2006 Proc. SPIE 6273 62730A
[14] Suzuki K, Okudaira S, Sakudo N, Kanomata I 1977 Jpn. J. Appl. Phys. 16) 1979
[15] Geller R 1976 IEEE. Trans. Nucl. Sci. NS-23 904
[16] Sakudo N, Tokiguchi K, Koike H, Kanomata I 1977 Rev. Sci. Instrum 48 762
[17] Keskar N R, Chelikowsky J R 1992 Phys. Rev. B 46 1
[18] Cartry G, Magne L, Cernogora G 2000 J. Phys. D Appl. Phys. 33 1303
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[1] Campbell J H, Hawley-Fedder R A, Stolz C J, Menapace J A, Borden M R, Whitman P K, Yu J, Runkel M J, Riley M O, Feit M D, Hackel R P 2004 Proc. SPIE 5341 84
[2] Hua J R, Zu X T, Li L, Xiang X, Chen M, Jiang X D, Yuan X D, Zheng W G 2010 Acta Phys. Sin. 59 2519 (in Chinese) [花金荣, 祖小涛, 李莉, 向霞, 陈猛, 蒋晓东, 袁晓东, 郑万国 2010 59 2519]
[3] Huang J, Jiang X D, Liu H J, Lv H B,Wang H J, Yuan X D, Zheng WG 2010 Acta Phys. Sin. 59 4677 (in Chinese) [黄进, 蒋晓东, 刘红婕, 吕海兵, 王海军, 袁晓东, 郑万国 2010 59 4677]
[4] Wang F R, Huang J, Liu H J, Zhou X D,Jiang X D, Wu W D, Zheng W G 2010 Acta Phys. Sin. 59 5122 (in Chinese) [王凤蕊, 黄进, 刘红婕, 周信达, 蒋晓东, 吴卫东, 郑万国 2010 59 5122]
[5] Liang F, Sun Q, Gingras D, Vallée R, Chin S R 2010 Appl. Phys. Lett. 96 101903
[6] Ferris K F, Chick L A, Exarhos G J, Risser S M 1998 Proc. SPIE 3244 142
[7] Genin F Y, Stolz C J 1996 Proc. SPIE 2870 439
[8] Kozlowski M R, Tench R J, Chow R, Sheehan L M 1994 Proc. SPIE 2253 743
[9] Trnch R J, Kozlowski M R, Chow R 1994 Proc. SPIE 2253 596
[10] Kozlowski M R, Carr J, Hutcheon I, Torres R, Sheehan L, Camp D, Yan M 1998 Proc. SPIE 3244 365
[11] Brusasco R M, Penetrante B M, Peterson J E, Maricle S M, Menapace J A 2002 Proc. SPIE 4679 48
[12] Genin F Y, Stolz C J, Kozlowski M R 1997 Proc. SPIE 2966 273
[13] Fanara C, Shore P, Nicholls J R, Lyford N, Sommer P, Fiske P 2006 Proc. SPIE 6273 62730A
[14] Suzuki K, Okudaira S, Sakudo N, Kanomata I 1977 Jpn. J. Appl. Phys. 16) 1979
[15] Geller R 1976 IEEE. Trans. Nucl. Sci. NS-23 904
[16] Sakudo N, Tokiguchi K, Koike H, Kanomata I 1977 Rev. Sci. Instrum 48 762
[17] Keskar N R, Chelikowsky J R 1992 Phys. Rev. B 46 1
[18] Cartry G, Magne L, Cernogora G 2000 J. Phys. D Appl. Phys. 33 1303
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