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Monolithic AlN，NbN films and AlN/NbN multilayers with different modulation periods were prepared by reactive magnetic sputtering. The films were characterized by X-ray diffraction, X-ray reflectivity and high-resolution transmission electron microscopy. The results showed that the crystal structure of monolithic AlN and NbN films is close-packed hexagonal (hcp) and face-centered cubic (fcc), respectively. The crystal structure of AlN and NbN is hcp and fcc, respectively, in AlN/NbN multilayers. The interfaces between AlN layers and NbN layers are coherent， i.e., c-NbN (111)∥h-AlN(0002). The lattice mismatch of AlN/NbN multilayers is 013%. The thermodynamic calculation revealed that no matter how thickness of AlN or NbN layer is, the AlN layer does not form nonequilibrium structure of fcc, but the equilibrium structure of hcp. The AlN layers grow in the way of hetero-epitaxial coherent growth with NbN layers.
[1] ［1］ Helmersson U, Todorova S, Barnett S A, Sundgren J E, Market L C, Greene J E 1987 J. Appl. Phys. 62 481
[2] ［2］Mirkarimi P B, Hultman L, Barnett S A 1990 Appl. Phys. Lett. 57 2654
[3] ［3］Sproul W D 1996 Science 273 889
[4] ［4］Sderberg H, Odén M, Molina-Aldareguia J M, Hultman L 2005 J. Appl. Phys. 97 114327
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[6] ［6］Wang L Q, Wang M X, Li D J, Yang J, Yu D S, Su J 2007 Acta Phys. Sin. 56 3435 (in Chinese)［王立群、王明霞、李德军、杨瑾、余大书、宿杰 2007 56 3435］
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[9] ［9］Lao J J, Shao N, Mei F H, Li G Y, Gu M Y 2005 Appl. Phys. Lett. 86 011902
[10] ］Wei L, Kong M, Dong Y S, Li G Y 2005 J. Appl. Phys. 98 074302
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[12] ］Kim I W, Li Q, Marks L D, Barnett S A 2001 Appl. Phys. Lett. 78 892
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[15] ］Li G Y, Lao L J, Tian J W, Han Z H, Gu M Y 2004 J. Appl. Phys. 95 92
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[17] ］Yashar P, Chu X, Barnett S A, Rechner J, Wang Y Y, Wong M S, Sproul W D 1998 Appl. Phys. Lett. 72 1987
[18] ］Xu J H, Yu L H, Dong S R, Kojima I 2008 Thin Solid Films 516 8640
[19] ］Yu L H, Dong S T, Dong S R, Xu J H 2008 Acta Phys. Sin. 57 5151 (in Chinese)［喻利花、董松涛、董师润、许俊华 2008 57 5151］
[20] ］Wu X Y, Kong M, Zhao W J, Li G Y 2009 Acta Phys. Sin. 58 2654 (in Chinese)［乌晓燕、孔明、赵文济、李戈扬 2009 58 2654］
[21] ］Zhao W J, Kong M, Huang B L, Li G Y 2007 Acta Phys. Sin. 56 1574 (in Chinese)［赵文济、孔明、黄碧龙、李戈扬 2007 56 1574］
[22] ］Yue J L, Kong M, Zhao W J, Li G Y 2007 Acta Phys. Sin. 56 1568 (in Chinese)［岳建岭、孔明、赵文济、李戈扬 2007 56 1568］
[23] ］Zhao W J, Dong Y S, Yue J L, Li G Y 2007 Acta Phys. Sin. 56 459 (in Chinese)［ 赵文济、董云杉、岳建岭、李戈扬 2007 56 459］
[24] ］Xu J H, Kamiko M, Zhou Y M, Lu G H, Yamamoto R, Yu L H, Kojima I 2002 Appl. Phys. Lett. 81 1189
[25] ］Xu J H, Kamiko M, Sawada H, Zhou Y M, Yamamoto R, Yu L H, Kojima I 2003 J. Vac. Sci. Technol. B 21 2584
[26] ］Li D, Chu X, Cheng S C, Lin X W, Dravid V P, Chung Y W, Wong M S, Sproul W D 1995 Appl. Phys. Lett. 67 203
[27] ］Wu M L, Guruz M U, Dravid V P, Chung Y W, Anders S, Freire F L Jr, Mariotto G 2000 Appl. Phys. Lett. 76 2692
[28] ］Kim C, Qadri S B, Scanlon M R, Cammarata R C 1994 Thin Solid Films 240 52
[29] ］Litimein F, Bouhafs B, Dridi Z, Ruterana P 2002 New J. Phys. 4 64
[30] ］Christensen N E, Gorczyca I 1994 Phys. Rev. B 50 4397
[31] ］Li Q, Kim I W, Barnett S A, Marks L D 2002 J. Mater. Res. 17 1224
[32] ］Wang Y Y, Wong M S, Chia W J, Rechner J, Sproul W D 1998 J. Vac. Sci. Technol. A 16 2913
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[1] ［1］ Helmersson U, Todorova S, Barnett S A, Sundgren J E, Market L C, Greene J E 1987 J. Appl. Phys. 62 481
[2] ［2］Mirkarimi P B, Hultman L, Barnett S A 1990 Appl. Phys. Lett. 57 2654
[3] ［3］Sproul W D 1996 Science 273 889
[4] ［4］Sderberg H, Odén M, Molina-Aldareguia J M, Hultman L 2005 J. Appl. Phys. 97 114327
[5] ［5］Barshilia H C, Deepthi B, Rajam K S 2008 J. Appl. Phys. 104 113532
[6] ［6］Wang L Q, Wang M X, Li D J, Yang J, Yu D S, Su J 2007 Acta Phys. Sin. 56 3435 (in Chinese)［王立群、王明霞、李德军、杨瑾、余大书、宿杰 2007 56 3435］
[7] ［7］Hultman L, Barero J, Flink A, Sderberg H, Larsson K, Petrova V, Odén M, Greene J E, Petrov I 2007 Phys. Rev. B 75 155437
[8] ［8］Xu J H, Yu L H, Azuma Y, Fujimoto T, Umehara H, Kojima I 2002 Appl. Phys. Lett. 81 4139
[9] ［9］Lao J J, Shao N, Mei F H, Li G Y, Gu M Y 2005 Appl. Phys. Lett. 86 011902
[10] ］Wei L, Kong M, Dong Y S, Li G Y 2005 J. Appl. Phys. 98 074302
[11] ］Madan A, Kim I W, Cheng S C, Yashar P, Dravid V P, Barnett S A 1997 Phys. Rev. Lett. 78 1743
[12] ］Kim I W, Li Q, Marks L D, Barnett S A 2001 Appl. Phys. Lett. 78 892
[13] ］Hu X P, Yu X J, Lao J J, Li G Y, Gu M Y 2003 J. Vac. Sci.
[14] Technol. B 21 2411
[15] ］Li G Y, Lao L J, Tian J W, Han Z H, Gu M Y 2004 J. Appl. Phys. 95 92
[16] ］Chu X, Wong M S, Sproul W D, Barnett S A 1993 Surf. Coat. Technol. 57 13
[17] ］Yashar P, Chu X, Barnett S A, Rechner J, Wang Y Y, Wong M S, Sproul W D 1998 Appl. Phys. Lett. 72 1987
[18] ］Xu J H, Yu L H, Dong S R, Kojima I 2008 Thin Solid Films 516 8640
[19] ］Yu L H, Dong S T, Dong S R, Xu J H 2008 Acta Phys. Sin. 57 5151 (in Chinese)［喻利花、董松涛、董师润、许俊华 2008 57 5151］
[20] ］Wu X Y, Kong M, Zhao W J, Li G Y 2009 Acta Phys. Sin. 58 2654 (in Chinese)［乌晓燕、孔明、赵文济、李戈扬 2009 58 2654］
[21] ］Zhao W J, Kong M, Huang B L, Li G Y 2007 Acta Phys. Sin. 56 1574 (in Chinese)［赵文济、孔明、黄碧龙、李戈扬 2007 56 1574］
[22] ］Yue J L, Kong M, Zhao W J, Li G Y 2007 Acta Phys. Sin. 56 1568 (in Chinese)［岳建岭、孔明、赵文济、李戈扬 2007 56 1568］
[23] ］Zhao W J, Dong Y S, Yue J L, Li G Y 2007 Acta Phys. Sin. 56 459 (in Chinese)［ 赵文济、董云杉、岳建岭、李戈扬 2007 56 459］
[24] ］Xu J H, Kamiko M, Zhou Y M, Lu G H, Yamamoto R, Yu L H, Kojima I 2002 Appl. Phys. Lett. 81 1189
[25] ］Xu J H, Kamiko M, Sawada H, Zhou Y M, Yamamoto R, Yu L H, Kojima I 2003 J. Vac. Sci. Technol. B 21 2584
[26] ］Li D, Chu X, Cheng S C, Lin X W, Dravid V P, Chung Y W, Wong M S, Sproul W D 1995 Appl. Phys. Lett. 67 203
[27] ］Wu M L, Guruz M U, Dravid V P, Chung Y W, Anders S, Freire F L Jr, Mariotto G 2000 Appl. Phys. Lett. 76 2692
[28] ］Kim C, Qadri S B, Scanlon M R, Cammarata R C 1994 Thin Solid Films 240 52
[29] ］Litimein F, Bouhafs B, Dridi Z, Ruterana P 2002 New J. Phys. 4 64
[30] ］Christensen N E, Gorczyca I 1994 Phys. Rev. B 50 4397
[31] ］Li Q, Kim I W, Barnett S A, Marks L D 2002 J. Mater. Res. 17 1224
[32] ］Wang Y Y, Wong M S, Chia W J, Rechner J, Sproul W D 1998 J. Vac. Sci. Technol. A 16 2913
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