| [1] |
Bai Wen-Qing, Yang Jiang-Tao, Yang Cui-Hong, Chen Yun-Yun. Interband optical conductivity in electromagnetic field modulated strained black phosphorene. Acta Physica Sinica,
2024, 73(13): 137803.
doi: 10.7498/aps.73.20240445
|
| [2] |
Shi Yan, Zhang Tian-Hui. Control of self-organization: From equilibrium to non-equilibrium. Acta Physica Sinica,
2020, 69(14): 140503.
doi: 10.7498/aps.69.20200161
|
| [3] |
Zhang Qiang-Qiang, Hu Jian-Yong, Jing Ming-Yong, Li Bin, Qin Cheng-Bing, Li Yao, Xiao Lian-Tuan, Jia Suo-Tang. Research on fluorescence lifetime dynamics of quantum dot by single photons modulation spectrum. Acta Physica Sinica,
2019, 68(1): 017803.
doi: 10.7498/aps.68.20181797
|
| [4] |
Qiao Zhi-Xing, Qin Cheng-Bing, He Wen-Jun, Gong Ya-Ni, Xiao Lian-Tuan, Zhang Guo-Feng, Chen Rui-Yun, Gao Yan, Jia Suo-Tang. Lifetime modulation of graphene oxide film by laser direct writing for the fabrication of micropatterns. Acta Physica Sinica,
2018, 67(6): 066802.
doi: 10.7498/aps.67.20172331
|
| [5] |
Wang Qian, Liu Wei-Guo, Gong Lei, Wang Li-Guo, Li Ya-Qing. Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption. Acta Physica Sinica,
2018, 67(21): 217201.
doi: 10.7498/aps.67.20181509
|
| [6] |
Zhang Xi-Ren, Gao Chun-Ming. Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique. Acta Physica Sinica,
2014, 63(13): 137801.
doi: 10.7498/aps.63.137801
|
| [7] |
Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng. First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices. Acta Physica Sinica,
2010, 59(8): 5661-5666.
doi: 10.7498/aps.59.5661
|
| [8] |
Zhu Yi-Ming, Kaz Hirakawa, Chen Lin, He Bo-Yong, Huang Yuan-Shen, Jia Xiao-Xuan, Zhang Da-Wei, Zhuang Song-Lin. Terahertz power dissipation spectra of electrons in bulk GaAs under high electric fields at low temperature. Acta Physica Sinica,
2009, 58(4): 2692-2696.
doi: 10.7498/aps.58.2692
|
| [9] |
Zhang Qing-Bin, Hong Wei-Yi, Lan Peng-Fei, Yang Zhen-Yu, Lu Pei-Xiang. Control of attosecond pulse generation with modulated polarization gating. Acta Physica Sinica,
2008, 57(12): 7848-7854.
doi: 10.7498/aps.57.7848
|
| [10] |
Zhang Xi-Ren, Li Bin-Cheng, Liu Xian-Ming. Measurement of electronic transport property of semiconductors by three-dimensional modulated free carrier absorption technique. Acta Physica Sinica,
2008, 57(11): 7310-7316.
doi: 10.7498/aps.57.7310
|
| [11] |
Shu Qiang, Shu Yong-Chun, Zhang Guan-Jie, Liu Ru-Bin, Yao Jiang-Hong, Pi Biao, Xing Xiao-Dong, Lin Yao-Wang, Xu Jing-Jun, Wang Zhan-Guo. Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure. Acta Physica Sinica,
2006, 55(3): 1379-1383.
doi: 10.7498/aps.55.1379
|
| [12] |
Xing Xiu-San. Nonequilibrium statistical information theory. Acta Physica Sinica,
2004, 53(9): 2852-2863.
doi: 10.7498/aps.53.2852
|
| [13] |
LI YAN-FEI. SUPERCONDUCTING FLUCTUATION AND PARACONDUCTIV-ITY IN AMORPHOUS ZrCo ALLOYS. Acta Physica Sinica,
1990, 39(6): 151-156.
doi: 10.7498/aps.39.151
|
| [14] |
LI YU-ZHANG, XU ZHONG-YING, GE WEI-KUN, XU JI-SONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA. NONEQUILIBRIUM PHONON EFFECTS IN HOT CARRIER RELAXATION PROCESSES OF MULTIPLE QUANTUM WELL STRUCTURES. Acta Physica Sinica,
1989, 38(9): 1540-1544.
doi: 10.7498/aps.38.1540
|
| [15] |
XIONG SHI-JIE. RELAXATION PROCESSES OF CARRIERS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES WITH MODULATEDLY DISTRIBUTED RECOMBINATION CENTERS. Acta Physica Sinica,
1986, 35(12): 1624-1633.
doi: 10.7498/aps.35.1624
|
| [16] |
YUI SHOU-DUNG, WOO DAU-WEI, TON FU-DI, TAM HOA-YEN. MINORITY CARRIER LIFETIME IN SILICON CARBIDE BY THE ELECTROLUMINESCENCE METHOD. Acta Physica Sinica,
1966, 22(9): 976-981.
doi: 10.7498/aps.22.976
|
| [17] |
WANG CHI-MING. THE PHASE-SHIFT LIFETIME OF EXCESS CARRIERS IN SEMICONDUCTORS UNDER SINUSOIDAL INJECTION. Acta Physica Sinica,
1966, 22(3): 318-324.
doi: 10.7498/aps.22.318
|
| [18] |
HUNG GIAN. THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica,
1966, 22(4): 385-403.
doi: 10.7498/aps.22.385
|
| [19] |
ZHUANG WEI-HWA, PAN GUI-SHENG. MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD. Acta Physica Sinica,
1963, 19(3): 191-201.
doi: 10.7498/aps.19.191
|
| [20] |
WANG SHOU-WU. THE MEASUREMENT OF THE LIFE TIME OF MINORITY CURRENT CARRIERS IN SEMICONDUCTORS BY OBSERVING THE PHOTO-CONDUCTIVE DECAY OF THE SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica,
1963, 19(3): 176-190.
doi: 10.7498/aps.19.176
|
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