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Peng Ying-Zha, Zhang Kai, Zheng Bai-Lin. Analytical analysis of concentration distribution and diffusion-induced stress of finite-length cylindrical electrode under galvanostatic operation. Acta Physica Sinica,
2024, 73(15): 158201.
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Wang Bo, Li Yu-Dong, Guo Qi, Liu Chang-Ju, Wen Lin, Ren Di-Yuan, Zeng Jun-Zhe, Ma Li-Ya. Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor. Acta Physica Sinica,
2015, 64(8): 084209.
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Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica,
2015, 64(16): 167305.
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2015, 64(12): 127303.
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Nan Yi-Bing, Tang Yi, Zhang Li-Jun, Chang Yue-E, Chen Ting-Ai. A sectioned method to correct spectral imaging data degraded by satellite vibrations. Acta Physica Sinica,
2014, 63(1): 010701.
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2012, 61(10): 108501.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
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Tang Qiu-Yan, Tang Yi, Cao Wei-Liang, Wang Jing, Nan Yi-Bing, Ni Guo-Qiang. Simulation of imaging spectrometers degraded by satellite vibrations. Acta Physica Sinica,
2012, 61(7): 070202.
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2011, 60(12): 128501.
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Luo Zhen-Fei, Wu Zhi-Ming, Xu Xiang-Dong, Wang Tao, Jiang Ya-Dong. Aging in the electrical properties of nanostructured vanadium oxide thin film exposed to air. Acta Physica Sinica,
2011, 60(6): 067302.
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Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs. Acta Physica Sinica,
2009, 58(1): 511-517.
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Shen Zi-Cai, Kong Wei-Jin, Feng Wei-Quan, Ding Yi-Gang, Liu Yu-Ming, Zheng Hui-Qi, Zhao Xue, Zhao Chun-Qing. Degradation model of the optical properties of the thermal control coatings. Acta Physica Sinica,
2009, 58(2): 860-864.
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Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
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Liu Yu-An, Du Lei, Bao Jun-Lin. Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2008, 57(4): 2468-2475.
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Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju. Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’s. Acta Physica Sinica,
2007, 56(3): 1662-1667.
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica,
2006, 55(11): 6118-6122.
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Feng Yu-Qing, Hou Li-Na, Zhu Tao, Yao Shu-De, Zhan Wen-Shan. Thermal stability of the magnetic tunnel junctions with nano-oxide layers. Acta Physica Sinica,
2005, 54(9): 4340-4344.
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2002, 51(1): 163-166.
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LIU HONG-XIA, HAO YUE. STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(9): 1769-1773.
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FAN HAI-FU, QIAN JIN-ZI. PROCEDURE FOR SOLVING THE PROBLEM OF PHASE DEGENERATION RESULTING FROM DIRECT METHODS. Acta Physica Sinica,
1981, 30(5): 594-601.
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