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1998, 47(1): 68-74.
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1996, 45(4): 715-720.
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1995, 44(4): 622-628.
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1995, 44(8): 1328-1334.
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1992, 41(6): 992-998.
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1992, 41(4): 689-696.
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1988, 37(2): 311-317.
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DING XUN-MIN, DONG GUO-SHENG, YANG SHU, CHEN PING, WANG XUN. AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS. Acta Physica Sinica,
1985, 34(5): 634-639.
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JIN XIAO-FENG, FENG YI-QING, ZHUANG CHENG-QUN, WANG XUN. THE THERMAL DESORPTION SPECTRA STUDY OF HYDROGEN CHEMISORPTION ON Si(100) CLEAN SURFACE. Acta Physica Sinica,
1984, 33(6): 747-754.
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XU YA-BUO, DONG GUO-SHENG, DING XUN-MIN, YANG SHU, WANG XUN. THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE. Acta Physica Sinica,
1983, 32(10): 1339-1343.
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Yu Ming-ren, Yang Guang, Wang Xun. DETERMINATION OF THE ATOMIC CONCENTRATION RATIO ON InP (100) CLEAN SURFACES BY X-RAY PHOTOELECTRON SPECTROSCOPY. Acta Physica Sinica,
1983, 32(6): 799-802.
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