| [1] |
Zhao Hua-Liang, Peng Hong-Ling, Zhou Xu-Yan, Zhang Jian-Xin, Niu Bo-Wen, Shang Xiao, Wang Tian-Cai, Cao Peng. Structural design of dual carrier multiplication avalanche photodiodes on InP substrate. Acta Physica Sinica,
2023, 72(19): 198502.
doi: 10.7498/aps.72.20230885
|
| [2] |
Wang Ao-Shuang, Xiao Qing-Quan, Chen Hao, He An-Na, Qin Ming-Zhe, Xie Quan. Design and simulation of Mg2Si/Si avalanche photodiode. Acta Physica Sinica,
2021, 70(10): 108501.
doi: 10.7498/aps.70.20201923
|
| [3] |
Zhang Hai-Yan, Wang Lin-Li, Wu Chen-Yi, Wang Yu-Rong, Yang Lei, Pan Hai-Feng, Liu Qiao-Li, Guo Xia, Tang Kai, Zhang Zhong-Ping, Wu Guang. Avalanche photodiode single-photon detector with high time stability. Acta Physica Sinica,
2020, 69(7): 074204.
doi: 10.7498/aps.69.20191875
|
| [4] |
Zhao Hong-Yu, Wang Di, Wei Zhi, Jin Guang-Yong. Finite element analysis and experimental study on electrical damage of silicon photodiode induced by millisecond pulse laser. Acta Physica Sinica,
2017, 66(10): 104203.
doi: 10.7498/aps.66.104203
|
| [5] |
Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang. Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica,
2011, 60(4): 047303.
doi: 10.7498/aps.60.047303
|
| [6] |
Mo Qiu-Yan, Zhao Yan-Li. Frequency responses of communication avalanche photodiodes. Acta Physica Sinica,
2011, 60(7): 072902.
doi: 10.7498/aps.60.072902
|
| [7] |
Han Jin-Liang, Sun Li-Zhong, Chen Xiao-Shuang, Lu Wei, Zhong Jian-Xin. First-principles study of gold p-type doping in Hg1－xCdxTe. Acta Physica Sinica,
2010, 59(2): 1202-1211.
doi: 10.7498/aps.59.1202
|
| [8] |
Halimulati, Abai, Baishan, Aimaiti. Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica,
2008, 57(2): 1161-1165.
doi: 10.7498/aps.57.1161
|
| [9] |
Wang Jin-Dong, Wu Zu-Heng, Zhang Bing, Wei Zheng-Jun, Liao Chang-Jun, Liu Song-Hao. A new circuit model for avalanche photodiodes to detect infrared single photon by transient process of transmission lines. Acta Physica Sinica,
2008, 57(9): 5620-5626.
doi: 10.7498/aps.57.5620
|
| [10] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
doi: 10.7498/aps.55.1424
|
| [11] |
Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li. Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1－xCdxTe films. Acta Physica Sinica,
2005, 54(8): 3726-3733.
doi: 10.7498/aps.54.3726
|
| [12] |
HUANG SHI-HUA, MO YU-DONG. RESONANT RAMAN SCATTERING OF Hg1-xCdxTe . Acta Physica Sinica,
2001, 50(5): 964-967.
doi: 10.7498/aps.50.964
|
| [13] |
LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
2001, 50(2): 262-267.
doi: 10.7498/aps.50.262
|
| [14] |
CHANG YONG, CHU JUN-HAO, TANG WEN-GUO, SHEN WEN-ZHONG, TANG DING-YUAN. PHOTOLUMINESCENCE OF Sb-DOPED Hg1-xCdxTe. Acta Physica Sinica,
1997, 46(5): 959-963.
doi: 10.7498/aps.46.959
|
| [15] |
LI BIAO, CHU JUN-HAO, SHI XIAO-HONG, CHEN XIN-QIANG, CAO JU-YING, TANG DING-YUAN. FREE CARRIER ABSORPTION SPECTRA FOR Hg1-xCdxTe EPILAYERS. Acta Physica Sinica,
1996, 45(9): 1430-1437.
doi: 10.7498/aps.45.1430
|
| [16] |
JIANG SHAN, ZHU HAO-RONG, SHEN XUE-CHU, J. SCHILZ. THE PRESSURE DEPENDENCE OF ENERGY GAP FOR MIXED CRYSTAL Hg0.3Cd0.7Te. Acta Physica Sinica,
1989, 38(11): 1858-1863.
doi: 10.7498/aps.38.1858
|
| [17] |
Fu Rou-li. LOW FREQUENCY ABSORPTION BAND IN Hg1-xCdxTe. Acta Physica Sinica,
1986, 35(10): 1299-1305.
doi: 10.7498/aps.35.1299
|
| [18] |
LI MING-FU, CHEN JIAN-XIN, YAO YU-SHU, BAI GUANG. HYDROSTATIC PRESSURE DEPENDENCE OF GOLD ACCEPTOR LEVELS IN Si. Acta Physica Sinica,
1985, 34(8): 1068-1074.
doi: 10.7498/aps.34.1068
|
| [19] |
TSCHEN DSIN-GUANG. SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica,
1965, 21(2): 383-389.
doi: 10.7498/aps.21.383
|
| [20] |
SEN HSUEH-CHU, CHEN NING-CHIANG. PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF GERMANIUM ESAKI DIODES. Acta Physica Sinica,
1964, 20(10): 1019-1026.
doi: 10.7498/aps.20.1019
|
下载:
