The hydrostatic pressure coefficient of gold acceptor levels Er in Silicon was measured by transient capacitance method. Under the pressure range of 0-8 Kbar, thepressure coefficient (?(Ec-ET))/(?P) =-1.9 meV/kbar. The electron capture cross section of gold acceptor centers does not depend on pressure within the experimental accuracy. By comparing the present result of hydrostatic pressure coefficient with the uniaxial pressure coefficient reported in [13], we conclude that the defect potential is lack of Td symmetry. Therefore, the gold acceptor levels are not originated by simple gold substitutional or interstitial configuration in Si crystals.