[1] |
Yang Ke-Li. Period-adding bifurcations in a discontinuous system with a variable gap. Acta Physica Sinica,
2015, 64(12): 120502.
doi: 10.7498/aps.64.120502
|
[2] |
Huang Jing-Guo, Lu Jin-Xing, Zhou Wei, Tong Jing-Chao, Huang Zhi, Chu Jun-Hao. Investigation of high power terahertz emission in gap crystal based on collinear difference frequency generation. Acta Physica Sinica,
2013, 62(12): 120704.
doi: 10.7498/aps.62.120704
|
[3] |
He Qin-Yu, Luo Hai-Jin, Wang Yin-Zhen, Li Wei, Su Jia-Bin, Lei Zheng-Da, Chen Zhen-Rui, Zhang Yong. Effects of random pores on the thermoelectric properties of Si100P2.5 (GaP)1.5 bulk. Acta Physica Sinica,
2012, 61(23): 237201.
doi: 10.7498/aps.61.237201
|
[4] |
Liu Feng, Li Yi, Shi Jun-Kai, Hu Xiao-Kun, Li Jiang, Li Yan-Feng, Xing Qi-Rong, Hu Ming-Lie, Chai Lu, Wang Qing-Yue. Frequency tunable terahertz pulses generated from GaP waveguide emitter. Acta Physica Sinica,
2012, 61(3): 034210.
doi: 10.7498/aps.61.034210
|
[5] |
Liu Feng, Hu Xiao-Kun, Li Yan-Feng, Xing Qi-Rong, Hu Ming-Lie, Chai Lu, Wang Ching-Yue. GaP terahertz emitter with micro-pyramid anti-reflection layer. Acta Physica Sinica,
2012, 61(4): 040703.
doi: 10.7498/aps.61.040703
|
[6] |
Liu Feng, Xing Qi-Rong, Hu Ming-Lie, Li Yan-Feng, Wang Chang-Lei, Chai Lu, Wang Qing-Yue. Experimental study on nonlinear absorption and Kerr effect in undoped GaP induced by femtosecond laser. Acta Physica Sinica,
2011, 60(1): 017806.
doi: 10.7498/aps.60.017806
|
[7] |
Li Yang-Ping, Liu Zheng-Tang. Plasma emission diagnostics for the optimization of deposition parameters in RF magnetron sputtering of GaP film. Acta Physica Sinica,
2009, 58(7): 5022-5028.
doi: 10.7498/aps.58.5022
|
[8] |
Fang Kun, Gao Shan-Min, Jiang Wei, Zhang Jiang, Cao Chuan-Bao, Zhu He-Sun. Formation mechanism of GaP nanorods under mild Benzene-thermal condition. Acta Physica Sinica,
2007, 56(6): 3488-3492.
doi: 10.7498/aps.56.3488
|
[9] |
Li Yang-Ping, Liu Zheng-Tang, Zhao Hai-Long, Liu Wen-Ting, Yan Feng. RF magnetron sputtering of GaP thin film and computer simulation of its depositing process. Acta Physica Sinica,
2007, 56(5): 2937-2944.
doi: 10.7498/aps.56.2937
|
[10] |
LIN XIU-HUA. XPS INVESTIGATION OF INTERFACE CHARACTERISTICS IN Au/GaP CONTACT SYSTEM. Acta Physica Sinica,
1998, 47(12): 2018-2024.
doi: 10.7498/aps.47.2018
|
[11] |
ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI. THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica,
1991, 40(8): 1329-1338.
doi: 10.7498/aps.40.1329
|
[12] |
WANG EN-GE, ZHANG LI-YUAN, WANG HUAI-YU. EFFECT OF STRAIN ON THE BULK AND THE SURFACE ELECTRONIC STRUCTURES OF (GaP)1/(InP)1(111) SUPERLATTICE. Acta Physica Sinica,
1991, 40(3): 459-468.
doi: 10.7498/aps.40.459
|
[13] |
JIANG WEI-DONG, FAN YONG-LIANG, SHENG CHI, YU MING-REN. ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE. Acta Physica Sinica,
1990, 39(9): 1429-1434.
doi: 10.7498/aps.39.1429
|
[14] |
LU XUE-KUN, HOU XIAO-YUAN, CING XUN-MIN, CHEN PING. GaP BAND STRUCTURE STUDIED BY ARUPS. Acta Physica Sinica,
1990, 39(8): 108-114.
doi: 10.7498/aps.39.108
|
[15] |
XIAO HAN-YU, LU XUE-KUN, DONG GUO-SHENG, DING XUN-MIN, CHEN PING. INITIAL STAGE OF OXYGEN ADSORPTION ON GaP(111) SURFACES. Acta Physica Sinica,
1990, 39(10): 1665-1670.
doi: 10.7498/aps.39.1665
|
[16] |
. INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1989, 38(8): 1265-1270.
doi: 10.7498/aps.38.1265
|
[17] |
LU XUE-KUN, DONG GUO-SHENG. SURFACE STATES OF GaP(111) SURFACE STUDIED BY ARUPS AND HREELS. Acta Physica Sinica,
1989, 38(12): 1974-1980.
doi: 10.7498/aps.38.1974
|
[18] |
HUANG QI-SHENG. ANTIBONDING STATE AND RELATED PROPERTIES OF Fe-ACCEPT OR IN GaP AND GaAs. Acta Physica Sinica,
1987, 36(11): 1481-1484.
doi: 10.7498/aps.36.1481
|
[19] |
Xue Fang-shi. ENERGY BAND CALCULATION FOR GaAs, GaP AND GaAsxP1-x. Acta Physica Sinica,
1986, 35(10): 1315-1321.
doi: 10.7498/aps.35.1315
|
[20] |
ZHAO XUE-SHU, LI GUO-HUA, HAN HE-XIANG, WANG ZHAO-PING, TANG RU-MING, HU JING-ZHU. A STUDY OF PHOTOLUMINESCENCE OF GaP(N,Te,Zn) UNDER HIGH PRESSURES. Acta Physica Sinica,
1984, 33(4): 583-587.
doi: 10.7498/aps.33.583
|