近地轨道质子和α粒子入射InP产生的位移损伤模拟

白雨蓉; 李培; 何欢; 刘方; 李薇; 贺朝会

doi:10.7498/aps.73.20231499

摘要

磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点, 是制备航天器电子器件的优良材料. 近地轨道内的质子和α粒子对近地卫星威胁巨大, 其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素. 本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150 μm 二氧化硅和2.54 mm 铝层屏蔽后, 在500/1000/5000 μm InP材料中产生的非电离能量损失(non-ionizing energy loss, NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能. 研究发现: 低能质子射程短且较易发生非电离反应, 入射粒子能谱中低能粒子占比越大, 材料厚度越小, NIEL值越大; 计算质子和α粒子年总非电离损伤能, 质子的年总非电离损伤能占比达98%, 表明质子是近地轨道内产生位移损伤的主要因素; α粒子年总非电离损伤能占比小, 但其在InP中的NIEL约为质子的2—10倍, 应关注α粒子在InP中产生的单粒子位移损伤效应. 本文计算为InP材料在空间辐射环境的应用提供了参考依据.

关键词:

Abstract

Indium phosphide (InP) material hasmany advantages, such as large band gap, high electron mobility, high photoelectric conversion efficiency, high temperature resistance, and radiation resistance, which is superior to silicon (Si) and gallium arsenide (GaAs). Meanwhile InP is widely used in optical communication, high-frequency millimeter waves, optoelectronic integrated circuits, satellite communication, space solar cells, and other fields. Radiation particles incident on InP device can generate displacement atoms inside the device through elastic processes. And these displacement atoms continue cascade collisions to generate lattice defects which are vacancies, interstitials, and clusters. These defects capture electrons-holes by defective energy levels in the energy band, and then resulting in a decrease in the life of minority carriers which is the reason of degradation of InP devices. The process of degradation of InP device, induced by lattice defects from ion-irradiation, is called displacement damage effect (DDE). The non-ionizing loss energy (NIEL) scaling is a useful method to predict the degradation of device caused by DDE of radiation particles. Many studies have shown that the NIEL is linearly related to the damage coefficient of InP device. Previous studies of radiation damage effect of InP device mainly focused on single-energy protons, electrons, and neutrons. Of the particles in low earth orbit (LEO),the vast majority of particles are protons, with a few being α particles and electrons, while the electron’s NIEL is too small and its DDE is negligible. The InP’s NIEL induced by proton and α energy in LEO has not been studied in detail. Therefore, this paper uses Monte Carlo software Geant4 to study the NIEL, damage energy distribution with depth, and annual total non-ionization loss energy generated by protons and α particles in LEO in 500/1000/5000 μm InP materials. The shielding of 150-μm-thick SiO₂ layer and 2.54-mm-thick Al layer from protons and α particles are used as InP solar cell and InP devices in spacecraft, respectively. It is found that the energy spectrum determines the non-ionizing damage energy $ {T}_{\text{dam}} $ distribution, and then influences the NIEL value: the NIEL value increases with $ {T}_{\text{dam}} $ increasing and thickness of InP material decreasing. And α NIEL is larger than proton’s, the single particle DDE of InP device, induced by α particles, should be concerned. The annual non-ionizing damage energy of proton accounts for 98%, which means that proton is the main factor degrading InP devices in LEO.

Keywords:

作者及机构信息

西安交通大学核科学与技术学院, 西安　710049

通信作者: 李培, lipei0916@xjtu.edu.cn

基金项目: 国家自然科学基金 (批准号: 11975179) 资助的课题.

Authors and contacts

School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China

Corresponding author: Li Pei, lipei0916@xjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11975179).

文章全文 : translate this paragraph

参考文献

[1]	Sun S X, Ji H F, Yao H J, Li S, Jin Z, Ding P, Zhong Y H 2016 Chin. Phys. B 25 4 Google Scholar
[2]	Shatalov A, Subramanian S, Klein A 2001 IEEE Trans. Nucl. Sci. 48 2262 Google Scholar
[3]	Yamaguchi M, Takamoto T, Taylor S J, Walters R J, Summers G P, Flood D J, Ohmori M 1997 J. Appl. Phys. 81 6013 Google Scholar
[4]	Srour J R, Palko J W 2013 IEEE Trans. Nucl. Sci. 60 1740 Google Scholar
[5]	Jay A, Hemeryck A, Richard N, Martin-Samos L, Raine M, Le Roch A, Mousseau N, Goiffon V, Paillet P, Gaillardin M, Magnan P 2018 IEEE Trans. Nucl. Sci. 65 724 Google Scholar
[6]	Nordlund K, Zinkle S J, Sand A E, Granberg F, Averback R S, Stoller R E, Suzudo T, Malerba L, Banhart F, Weber W J, Willaime F, Dudarev S L, Simeone D 2018 J. Nucl. Mater. 512 450 Google Scholar
[7]	Summers G P, Burke E A, Shapiro P, Messenger S R, Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372 Google Scholar
[8]	Messenger S R, Burke E A, Summers G P, Xapsos M A, Walters R J, Jackson E M, Weaver B D 1999 IEEE Trans. Nucl. Sci. 46 1595 Google Scholar
[9]	Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653 Google Scholar
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[18]	Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
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[20]	Dietrich W F, Shea M A, Smart D F 1997 IEEE T. Nucl. Sci. 44 2150 Google Scholar

施引文献

图 1 1—300 MeV质子和α粒子在InP中的NIEL值　(a)质子^[15]; (b) α粒子^[19]

Fig. 1. NIEL of 1—300 MeV protons and α in InP materials: (a) Proton ^[15]; (b) α^[19].

下载: 全尺寸图片幻灯片

图 2 InP太阳能电池工况模拟设置图　(a)近地轨道内质子和α粒子能谱; (b) InP太阳能电池模拟结构图, 即500 μm×500 μm区域源离子入射500/1000/5000 μm InP材料(深蓝色)经过150 μm SiO₂(浅蓝色)后的示意图

Fig. 2. The simulation settings of InP solar cell: (a) Proton and α energy spectrum in low Earth orbit; (b) simulation structure diagram of InP solar cells, the schematic of 500 μm×500 μm area source ion-incident 500/1000/5000 μm InP materials (deep blue) after 150 μm SiO₂ (light blue)

下载: 全尺寸图片幻灯片

图 3 航天器内部InP电子器件工况模拟设置图　(a)近地轨道内经过2.54 mm铝层屏蔽的质子和α粒子能谱; (b) InP材料模拟结构图, 即500 μm×500 μm区域源离子入射500/1000/5000 μm InP材料

Fig. 3. The simulation settings of InP electronics in spacecraft: (a) Proton and α energy spectrum after the shielding of 2.54 mm Al in low Earth orbit; (b) simulation structure diagram of InP solar cells, the schematic of 500 μm×500 μm area source ion-incident 500/1000/5000 μm InP materials.

下载: 全尺寸图片幻灯片

图 4 近地轨道内质子和α粒子经过150 μm SiO₂屏蔽后入射5000 μm InP中产生的$ {T}_{\text{dam}} $随深度分布, 数值的阴影是通过10次模拟计算得出的标准偏差

Fig. 4. The distribution of $ {T}_{\text{dam}} $with depth of 5000 μm InP materials induced by proton and α in low Earth orbit after the shielding of 150 μm SiO₂. The shadow of values is standard deviation which is calculated by ten simulations.

下载: 全尺寸图片幻灯片

图 5 近地轨道内质子和α粒子经过2.54 mm铝层后在5000 μm InP中产生的$ {T}_{\text{dam}} $随深度分布, 数值的阴影是通过10次模拟计算得出的标准偏差

Fig. 5. The distribution of $ {T}_{\text{dam}} $ with depth of 5000 μm InP materials induced by proton and α in low Earth orbit after the shielding of 2.54 mm Al. The shadow of values is standard deviation which is calculated by ten simulations.

下载: 全尺寸图片幻灯片

表 1 近地轨道质子及α粒子经过150 μm SiO₂后在InP产生的NIEL统计表

Table 1. NIEL of InP induced by proton and α in low Earth orbit after the shielding of 150 μm SiO₂.

粒子种类厚度/μm NIEL/(MeV·cm²·g^–1) 离散系数

质子 500 0.00219 0.01023
1000 0.00159 0.01381
5000 0.00075 0.01017
α 500 0.00705 0.02649
1000 0.00697 0.01609
5000 0.00691 0.00797

下载: 导出CSV

表 2 近地轨道质子及α粒子经过2.54 mm 铝层后在InP产生的NIEL统计表

Table 2. NIEL of InP induced by proton and α in low Earth orbit after the shielding of 2.54 mm Al.

粒子种类厚度/μm NIEL/(MeV·cm²·g^–1) 离散系数

质子 500 0.00403 0.00511
1000 0.00387 0.00554
5000 0.00300 0.00840
α 500 0.00704 0.01135
1000 0.00702 0.00505
5000 0.00689 0.00290

下载: 导出CSV

表 3 不同屏蔽材料下近地轨道的质子和α粒子在500 μm InP中产生的年总非电离损伤能汇总

Table 3. Annual non-ionizing damage energy and percent of proton and α in low Earth orbit after the shielding of 150 μm SiO₂ and 2.54 mm Al in 500 μm InP materials

屏蔽材料入射粒子粒子数目总非电离损伤能/MeV 占比/%

150 μm SiO₂ 质子 53395886 26452.04 98.73
α 222307 339.85 1.27
2.54 mm 铝质子 94458945 86520.48 99.58
α 219853 365.77 0.42

下载: 导出CSV

map

[1]	Sun S X, Ji H F, Yao H J, Li S, Jin Z, Ding P, Zhong Y H 2016 Chin. Phys. B 25 4 Google Scholar
[2]	Shatalov A, Subramanian S, Klein A 2001 IEEE Trans. Nucl. Sci. 48 2262 Google Scholar
[3]	Yamaguchi M, Takamoto T, Taylor S J, Walters R J, Summers G P, Flood D J, Ohmori M 1997 J. Appl. Phys. 81 6013 Google Scholar
[4]	Srour J R, Palko J W 2013 IEEE Trans. Nucl. Sci. 60 1740 Google Scholar
[5]	Jay A, Hemeryck A, Richard N, Martin-Samos L, Raine M, Le Roch A, Mousseau N, Goiffon V, Paillet P, Gaillardin M, Magnan P 2018 IEEE Trans. Nucl. Sci. 65 724 Google Scholar
[6]	Nordlund K, Zinkle S J, Sand A E, Granberg F, Averback R S, Stoller R E, Suzudo T, Malerba L, Banhart F, Weber W J, Willaime F, Dudarev S L, Simeone D 2018 J. Nucl. Mater. 512 450 Google Scholar
[7]	Summers G P, Burke E A, Shapiro P, Messenger S R, Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372 Google Scholar
[8]	Messenger S R, Burke E A, Summers G P, Xapsos M A, Walters R J, Jackson E M, Weaver B D 1999 IEEE Trans. Nucl. Sci. 46 1595 Google Scholar
[9]	Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653 Google Scholar
[10]	Li C H, Lu H L, Zhang Y M, Liu M, Zhao X H 2015 IEEE Trans. Nucl. Sci. 62 1336 Google Scholar
[11]	白雨蓉, 李永宏, 刘方, 廖文龙, 何欢, 杨卫涛, 贺朝会 2021 70 172401 Google Scholar Bai Y R, Li Y H, Liu F, Liao W L, He H, Yang W T, He C H 2021 Acta Phys. Sin. 70 172401 Google Scholar
[12]	李薇, 白雨蓉, 郭昊轩, 贺朝会, 李永宏 2022 71 082401 Google Scholar Li W, Bai Y R, Guo H X, He C H, Li Y H 2022 Acta Phys. Sin. 71 082401 Google Scholar
[13]	Akkerman A, Barak J 2006 IEEE Trans. Nucl. Sci. 53 3667 Google Scholar
[14]	Akkerman A, Barak J 2007 Nucl. Instrum. Meth. B 260 529 Google Scholar
[15]	Insoo J, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summers G P, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1924 Google Scholar
[16]	Agostinelli S, Allison J, Amako K, et al. 2003 Nucl. Instrum. Meth. A 506 250 Google Scholar
[17]	Liu L, Mei B, Zheng Z S, Wang L, Bai Y R, Yu Q K, Li P, Zhao H D, Sun Y C, Li B 2023 IEEE Trans. Nucl. Sci. 70 1885 Google Scholar
[18]	Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
[19]	Messenger S R, Burke E A, Xapsos M A, Summers G P, Walters R J, Insoo Jun, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1919 Google Scholar
[20]	Dietrich W F, Shea M A, Smart D F 1997 IEEE T. Nucl. Sci. 44 2150 Google Scholar

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近地轨道质子和α粒子入射InP产生的位移损伤模拟