二维磁性半导体笼目晶格Nb<sub>3</sub>Cl<sub>8</sub>单层的磁性及自旋电子输运性质

樊晓筝; 李怡莲; 吴怡; 陈俊彩; 徐国亮; 安义鹏

doi:10.7498/aps.72.20231163

摘要

具有本征磁性的二维半导体材料在实现低功耗、小尺寸和高效率的自旋电子学器件方面具有重要应用前景. 一些拥有特殊晶格结构的二维材料, 如笼目晶格结构, 凭借其在磁性和电学方面的新颖性质而受到研究者的青睐. 最近, 一种新的具有笼目晶格结构的二维磁性半导体材料Nb₃Cl₈单层被成功制备出来, 为探索具有笼目结构的二维磁性半导体器件提供了新机会. 本文通过第一性原理方法研究了Nb₃Cl₈单层的电子结构、磁各向异性, 构造了其p-n结二极管结构, 并研究了其自旋输运性质. 结果表明, Nb₃Cl₈单层易磁化轴在平面内, 沿x轴方向, Nb原子对磁各向异性起主要贡献, 且相关磁性可通过应力应变进行调控. 此外, 基于Nb₃Cl₈单层的p-n结二极管纳米器件表现出整流效应、自旋过滤效应以及负微分电阻现象. 这些结果表明了Nb₃Cl₈单层在下一代高性能自旋电子器件方面具有较大的应用潜力.

关键词:

Abstract

Two-dimensional semiconductor materials with intrinsic magnetism have great application prospects in realizing spintronic devices with low power consumption, small size and high efficiency. Some two-dimensional materials with special lattice structures, such as kagome lattice crystals, are favored by researchers because of their novel properties in magnetism and electronic properties. Recently, a new two-dimensional magnetic semiconductor material Nb₃Cl₈ monolayer with kagome lattice structure was successfully prepared, which provides a new platform for exploring two-dimensional magnetic semiconductor devices with kagome structure. In this work, we study the electronic structure and magnetic anisotropy of Nb₃Cl₈ monolayer. We also further construct its p-n junction diode and study its spin transport properties by using density functional theory combined with non-equilibrium Green’s function method. The results show that the phonon spectrum of the Nb₃Cl₈ monolayer has no negative frequency, confirming its dynamic stability. The band gap of the spin-down state (1.157 eV) is significantly larger than that of the spin-up state (0.639 eV). The magnetic moment of the Nb₃Cl₈ monolayer is 0.997 μ_B, and its easy magnetization axis is in the plane and along the x-axis direction based on its energy of magnetic anisotropy. The Nb atoms make the main contribution to the magnetic anisotropy. When the strain is applied, the band gap of the spin-down states will decrease, while the band gap of the spin-up state monotonically decreases from the negative (compress) to positive (tensile) strain. As the strain variable goes from –6% to 6%, the contribution of Nb atoms to the total magnetic moment gradually increases. Moreover, strain causes the easy magnetization axis of the Nb₃Cl₈ monolayer to flip vertically from in-plane to out-plane. The designed p-n junction diode nanodevice based on Nb₃Cl₈ monolayer exhibits an obvious rectification effect. In addition, the current in the spin-up state is larger than that in the spin-down state, exhibiting a spin-polarized transport behavior. Moreover, a negative differential resistance (NDR) phenomenon is also observed, which could be used in the NDR devices. These results demonstrate that the Nb₃Cl₈ monolayer material has great potential applications in the next-generation high-performance spintronic devices, and further experimental verification and exploration of this material and related two-dimensional materials are needed.

Keywords:

作者及机构信息

河南师范大学物理学院, 新乡　453007

通信作者: 安义鹏, ypan@htu.edu.cn

基金项目: 国家自然科学基金(批准号: 12274117)、河南省高校科技创新团队(批准号: 24IRTSTHN025)、河南省优秀青年科学基金(批准号: 202300410226)、中原英才计划-中原青年拔尖人才项目(2021年)、河南省高校重点科研项目(批准号: 22A140020)和河南省外籍专家工作室项目(批准号: GZS2023007)资助的课题.

Authors and contacts

School of Physics, Henan Normal University, Xinxiang 453007, China

Corresponding author: An Yi-Peng, ypan@htu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12274117), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 24IRTSTHN025), the Science Foundation for the Excellent Youth Scholars of Henan Province, China (Grant No. 202300410226), the Young Top-notch Talents Project of Henan Province, China (2021 year), the Key Scientific Project of Universities of Henan Province, China (Grant No. 22A140020), and the Henan Center for Outstanding Overseas Scientists, China (Grant No. GZS2023007).

[1]	Gong C, Li L, Li Z, Ji H, Stern A, Xia Y, Cao T, Bao W, Wang C, Wang Y, Qiu Z Q, Cava R J, Louie S G, Xia J, Zhang X 2017 Nature 546 265 Google Scholar
[2]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[3]	An M, Dong S 2020 APL Mater. 8 110704 Google Scholar
[4]	Ataca C, Sahin H, Ciraci S 2012 J. Phys. Chem. C 116 8983 Google Scholar
[5]	Du Y C, Yang L M, Liu H, Ye P D 2014 APL Mater. 2 092510 Google Scholar
[6]	Li G P, Yao K L, Gao G Y 2018 Nanotechnology 29 015204 Google Scholar
[7]	Li X X, Fan Z Q, Liu P Z, Chen M L, Liu X, Jia C K, Sun D M, Jiang X W, Han Z, Bouchiat V, Guo J J, Chen J H, Zhang Z D 2017 Nat. Commun. 8 970 Google Scholar
[8]	Yuan J, Chen Y, Xie Y, Zhang X, Rao D, Guo Y, Yan X, Feng Y P, Cai Y 2020 Proc. Natl. Acad. Sci. U.S.A. 117 6362 Google Scholar
[9]	An Y P, Gong S J, Hou Y S, Li J, Wu R Q, Jiao Z Y, Wang T X, Jiao J T 2020 J. Phys. Condens. Matter 32 055503 Google Scholar
[10]	An Y P, Hou Y S, Wang H, Li J, Wu R Q, Wang T X, Da H X, Jiao J T 2019 Phys. Rev. A 11 064031 Google Scholar
[11]	An Y P, Jiao J T, Hou Y S, Wang H, Wu D P, Wang T X, Fu Z M, Xu G L, Wu R Q 2018 Phys. Chem. Chem. Phys. 20 21552 Google Scholar
[12]	An Y P, Jiao J T, Hou Y S, Wang H, Wu R Q, Liu C, Chen X N, Wang T X, Wang K 2019 J. Phys. Condens. Matter 31 065301 Google Scholar
[13]	Feng B, Zhang J, Zhong Q, Li W, Li S, Li H, Cheng P, Meng S, Chen L, Wu K 2016 Nat. Chem. 8 563 Google Scholar
[14]	Mannix A J, Zhou X F, Kiraly B, Wood J D, Alducin D, Myers B D, Liu X, Fisher B L, Santiago U, Guest J R, Yacaman M J, Ponce A, Oganov A R, Hersam M C, Guisinger N P 2015 Science 350 1513 Google Scholar
[15]	Arcudia J, Kempt R, Cifuentes-Quintal M E, Heine T, Merino G 2020 Phys. Rev. Lett. 125 196401 Google Scholar
[16]	Jin Z H, Mullen J T, Kim K W 2016 Appl. Phys. Lett. 109 053108 Google Scholar
[17]	Lu J, Fan Z Q, Gong J, Chen J Z, ManduLa H, Zhang Y Y, Yang S Y, Jiang X W 2018 Phys. Chem. Chem. Phys. 20 5699 Google Scholar
[18]	Sibari A, Kerrami Z, Kara A, Benaissa M 2020 J. Appl. Phys. 127 225703 Google Scholar
[19]	An Y P, Wang K, Gong S J, Hou Y S, Ma C L, Zhu M F, Zhao C X, Wang T X, Ma S H, Wang H Y, Wu R Q, Liu W M 2021 npj Comput. Mater. 7 45 Google Scholar
[20]	Feng Y L, Wang Z L, Zuo X, Gao G Y 2022 Appl. Phys. Lett. 120 092405 Google Scholar
[21]	Gao Y F, Liao J B, Wang H Y, Wu Y, Li Y L, Wang K, Ma C L, Gong S J, Wang T X, Dong X, Jiao Z Y, An Y P 2022 Phys. Rev. A 18 034033 Google Scholar
[22]	Yan H J, Guan Q Y, Chen H F, Cui X Y, Shu Z, Liang D, Wang B W, Cai Y Q 2022 J. Mater. Chem. A 10 23744 Google Scholar
[23]	Liu Q, Li J J, Wu D, Deng X Q, Zhang Z H, Fan Z Q, Chen K Q 2021 Phys. Rev. B 104 045412 Google Scholar
[24]	Fan Z Q, Jiang X W, Chen J Z, Luo J W 2018 ACS Appl. Mater. Interfaces 10 19271 Google Scholar
[25]	Fan Z Q, Jiang X W, Luo J W, Jiao L Y, Huang R, Li S S, Wang L W 2017 Phys. Rev. B 96 165402 Google Scholar
[26]	Fan Z Q, Zhang Z H, Yang S Y 2020 Nanoscale 12 21750 Google Scholar
[27]	王贺岩, 高怡帆, 廖家宝, 陈俊彩, 李怡莲, 吴怡, 徐国亮, 安义鹏 2022 71 097502 Google Scholar Wang H Y, Gao Y F, Liao J B, Chen J C, Li Y L, Wu Y, Xu G L, An Y P 2022 Acta Phys. Sin. 71 097502 Google Scholar
[28]	Chen J C, Guo Y L, Ma C L, Gong S J, Zhao C X, Wang T X, Dong X, Jiao Z Y, Ma S H, Xu G L, An Y P 2023 Phys. Rev. A 19 054013 Google Scholar
[29]	Chen S B, Huang C X, Sun H S, Ding J F, Jena P, Kan E 2019 J. Phys. Chem. C 123 17987 Google Scholar
[30]	Dayen J F, Ray S J, Karis O, Vera-Marun I J, Kamalakar M V 2020 Appl. Phys. Rev. 7 011303 Google Scholar
[31]	Žutić I, Fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323 Google Scholar
[32]	Lin H L, Yan F G, Hu C, Zheng Y H, Sheng Y, Zhu W K, Wang Z, Zheng H Z, Wang K Y 2022 Nanoscale 14 2352 Google Scholar
[33]	Zhu W K, Xie S H, Lin H L, Zhang G J, Wu H, Hu T G, Wang Z, Zhang X M, Xu J H, Wang Y J, Zheng Y H, Yan F G, Zhang J, Zhao L X, Patané A, Zhang J, Chang H X, Wang K Y 2022 Chin. Phys. Lett. 39 128501 Google Scholar
[34]	Zhu W K, Lin H L, Yan F G, Hu C, Wang Z, Zhao L X, Deng Y C, Kudrynskyi Z R, Zhou T, Kovalyuk Z D, Zheng Y H, Patanè A, Žutić I, Li S S, Zheng H Z, Wang K Y 2021 Adv. Mater. 33 2104658 Google Scholar
[35]	Zhu W K, Zhu Y M, Zhou T, Zhang X P, Lin H L, Cui Q R, Yan F G, Wang Z, Deng Y C, Yang H X, Zhao L X, Žutić I, Belashchenko K D, Wang K Y 2023 Nat. Commun. 14 5371 Google Scholar
[36]	Wang Z A, Xue W S, Yan F G, Zhu W K, Liu Y, Zhang X H, Wei Z M, Chang K, Yuan Z, Wang K Y 2023 Nano Lett. 23 710 Google Scholar
[37]	Ugeda M M, Brihuega I, Guinea F, Gómez-Rodríguez J M 2010 Phys. Rev. Lett. 104 096804 Google Scholar
[38]	Mishra R, Zhou W, Pennycook S J, Pantelides S T, Idrobo J C 2013 Phys. Rev. B 88 144409 Google Scholar
[39]	Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler K L, Zhong D, Schmidgall E, McGuire M A, Cobden D H, Yao W, Xiao D, Jarillo-Herrero P, Xu X 2017 Nature 546 270 Google Scholar
[40]	Zhang Z W, Shang J Z, Jiang C Y, Rasmita A, Gao W B, Yu T 2019 Nano Lett. 19 3138 Google Scholar
[41]	Cai X H, Song T C, Wilson N P, Clark G, He M H, Zhang X O, Taniguchi T, Watanabe K, Yao W, Xiao D, McGuire M A, Cobden D H, Xu X D 2019 Nano Lett. 19 3993 Google Scholar
[42]	Rosenberg E, DeStefano J M, Guo Y, Oh J S, Hashimoto M, Lu D, Birgeneau R J, Lee Y, Ke L, Yi M, Chu J-H 2022 Phys. Rev. B 106 115139 Google Scholar
[43]	Zelenskiy A, Monchesky T L, Plumer M L, Southern B W 2022 Phys. Rev. B 106 144433 Google Scholar
[44]	Yi X W, Ma X Y, Zhang Z, Liao Z W, You J Y, Su G 2022 Phys. Rev. B 106 L220505 Google Scholar
[45]	Ghimire N J, Dally R L, Poudel L, Jones D C, Michel D, Magar N T, Bleuel M, McGuire M A, Jiang J S, Mitchell J F, Lynn J W, Mazin I I 2020 Sci. Adv. 6 eabe2680 Google Scholar
[46]	Kang M G, Ye L D, Fang S A, You J S, Levitan A, Han M Y, Facio J I, Jozwiak C, Bostwick A, Rotenberg E, Chan M K, McDonald R D, Graf D, Kaznatcheev K, Vescovo E, Bell D C, Kaxiras E, van den Brink J, Richter M, Prasad Ghimire M, Checkelsky J G, Comin R 2020 Nat. Mater. 19 163 Google Scholar
[47]	Li M, Wang Q, Wang G, Yuan Z, Song W, Lou R, Liu Z, Huang Y, Liu Z, Lei H, Yin Z, Wang S 2021 Nat. Commun. 12 3129 Google Scholar
[48]	Ye L D, Kang M G, Liu J W, von Cube F, Wicker C R, Suzuki T, Jozwiak C, Bostwick A, Rotenberg E, Bell D C, Fu L, Comin R, Checkelsky J G 2018 Nature 555 638 Google Scholar
[49]	Yin J X, Zhang S S, Li H, Jiang K, Chang G Q, Zhang B J, Lian B, Xiang C, Belopolski I, Zheng H, Cochran T A, Xu S Y, Bian G, Liu K, Chang T R, Lin H, Lu Z Y, Wang Z Q, Jia S, Wang W H, Hasan M Z 2018 Nature 562 91 Google Scholar
[50]	Xu X T, Yin J X, Ma W, Tien H J, Qiang X B, Reddy P V S, Zhou H, Shen J, Lu H Z, Chang T R, Qu Z, Jia S 2022 Nat. Commun. 13 1197 Google Scholar
[51]	Sun Z Y, Zhou H, Wang C X, Kumar S, Geng D Y, Yue S S, Han X, Haraguchi Y, Shimada K, Cheng P, Chen L, Shi Y G, Wu K H, Meng S, Feng B J 2022 Nano Lett. 22 4596 Google Scholar
[52]	Jiang J, Liang Q, Meng R, Yang Q, Tan C, Sun X, Chen X 2017 Nanoscale 9 2992 Google Scholar
[53]	Smidstrup S, Stradi D, Wellendorff J, Khomyakov P A, Vej-Hansen U G, Lee M E, Ghosh T, Jónsson E, Jónsson H, Stokbro K 2017 Phys. Rev. B 96 195309 Google Scholar
[54]	Brandbyge M, Mozos J L, Ordejón P, Taylor J, Stokbro K 2002 Phys. Rev. B 65 165401 Google Scholar
[55]	Marmolejo-Tejada J M, Dolui K, Lazic P, Chang P H, Smidstrup S, Stradi D, Stokbro K, Nikolić B K 2017 Nano Lett. 179 5626 Google Scholar
[56]	Smidstrup S, Markussen T, Vancraeyveld P, Wellendorff J, Schneider J, Gunst T, Verstichel B, Stradi D, Khomyakov P A, Vej-Hansen U G, Lee M E, Chill S T, Rasmussen F, Penazzi G, Corsetti F, Ojanperä A, Jensen K, Palsgaard M L N, Martinez U, Blom A, Brandbyge M, Stokbro K 2020 J. Phys. Condens. Matter 32 015901 Google Scholar
[57]	van Setten M J, Giantomassi M, Bousquet E, Verstraete M J, Hamann D R, Gonze X, Rignanese G M 2017 Comput. Phys. Commun. 226 39 Google Scholar
[58]	Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865 Google Scholar
[59]	Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188 Google Scholar
[60]	Mortazavi B, Zhuang X, Rabczuk T 2022 Appl. Phys. A 128 934 Google Scholar
[61]	Meng R S, Pereira L D, Locquet J P, Afanas'ev V, Pourtois G, Houssa M 2022 npj Comput. Mater. 8 230 Google Scholar
[62]	Lado J L, Fernández-Rossier J 2017 2D Mater. 4 035002 Google Scholar
[63]	Daalderop G H O, Kelly P J, Schuurmans M F H 1990 Phys. Rev. B 41 11919 Google Scholar
[64]	姜楠, 李奥林, 蘧水仙, 勾思, 欧阳方平 2022 71 206303 Google Scholar Jiang N, Li A L, Qu S X, Gou S, Ouyang F P 2022 Acta Phys. Sin. 71 206303 Google Scholar
[65]	Lv H Y, Lu W J, Shao D F, Liu Y, Sun Y P 2015 Phys. Rev. B 92 214419 Google Scholar
[66]	Webster L, Yan J A 2018 Phys. Rev. B 98 144411 Google Scholar
[67]	Stradi D, Martinez U, Blom A, Brandbyge M, Stokbro K 2016 Phys. Rev. B 93 155302 Google Scholar
[68]	Gunst T, Markussen T, Stokbro K, Brandbyge M 2016 Phys. Rev. B 93 035414 Google Scholar
[69]	Lee I H, Martin R M 1997 Phys. Rev. B 56 7197 Google Scholar
[70]	Büttiker M, Imry Y, Landauer R, Pinhas S 1985 Phys. Rev. B 31 6207 Google Scholar

施引文献

图 1 (a) Nb₃Cl₈单层晶体结构的俯视图(上)和侧视图(下), x轴代表锯齿型方向; (b) 声子谱以及投影声子态密度; 自旋向上(c)和向下(d)状态的元素投影电子能带以及投影态密度; Γ点附近自旋向上(e)和向下(f)状态的导带与价带的三维视图以及在第一布里渊区的二维投影; 色卡显示了图(e)、图(f)中从低(红色)到高(紫色)的能量本征值; 费米能级(E_F)设置在能量零点位置

Fig. 1. (a) Top view (top) and side view (bottom) of Nb₃Cl₈ monolayer crystal structure, x axis refers to the zigzag irection; (b) phonon spectrum and phonon projected density of states; element-projected electronic band and density of states for the spin-up (c) and spin-down (d) states; 3D views for the spin-up (e) and spin-down (f) states of the conduction and valence bands around the Γ point, and 2D views in the first Brillouin zone projection. Color map shows the values for (e), (f) from low (red) to high (purple). the Fermi level (E_F) is set at the energy zero position.

下载: 全尺寸图片幻灯片

图 2 (a) x-y平面内E_MA随极角θ和ϕ的变化; (b) y-z平面内E_MA随极角θ和ϕ的变化, 插图显示极坐标; (c) θ = 90°, ϕ = 90°(y轴方向)的E_MA轨道投影; (d) θ = 90°, ϕ = 0°(x轴方向)的E_MA轨道投影; y轴(θ = 90°, ϕ = 90°)和z轴(θ = 0°, ϕ = 90°)方向的能量设置为x-y和y-z平面的零参考

Fig. 2. (a) E_MA variation with polar angles θ and ϕ in the x-y plane; (b) E_MA variation with polar angles θ and ϕ in the y-z plane, inset shows polar coordinates; orbital projections of E_MA corresponding to polar angles of (c) θ = 90°, ϕ = 90° (y axis direction) and (d) θ = 90°, ϕ = 0° (x axis direction). Energy of y axis (θ = 90°, ϕ = 90°) and z axis (θ = 0°, ϕ = 90°) directions are set as zero reference of the x-y and y-z plane.

下载: 全尺寸图片幻灯片

图 3 (a) Nb₃Cl₈单层自旋向上态与自旋向下态带隙随应力应变的变化; (b) Nb₃Cl₈单层能量变化量($ \Delta E $)和Nb原子对总磁矩的贡献($ {{{M_{{\mathrm{Nb}}}}} / {{M_{{\mathrm{Total}}}}}} $)随应力应变的变化

Fig. 3. (a) Variation of the band gap with strain in the spin-up and spin-down states of Nb₃Cl₈ monolayer; (b) variation of the energy change ($ \Delta E $) and the contribution of Nb atoms to the total magnetic moment ($ {{{M_{{\mathrm{Nb}}}}} / {{M_{{\mathrm{Total}}}}}} $) with strain in the Nb₃Cl₈ monolayer.

下载: 全尺寸图片幻灯片

图 4 (a) Z型Nb₃Cl₈单层p-n结二极管示意图; (b) Z型Nb₃Cl₈单层p-n结二极管I-V曲线; (c) Z型Nb₃Cl₈单层p-n结二极管的微分电导(dI/dV)曲线; (d) Z型Nb₃Cl₈单层p-n结二极管整流比(RR)和极化比(PR)

Fig. 4. (a) Schematic diagram of Z-type Nb₃Cl₈ monolayer p-n junction diode; (b) I-V curve of Z-type Nb₃Cl₈ monolayer p-n junction diode; (c) differential conductance (dI/dV) curve of Z-type Nb₃Cl₈ monolayer p-n junction diode; (d) rectification ratio (RR) and polarization ratio (PR) of Z-type Nb₃Cl₈ monolayer p-n junction diode.

下载: 全尺寸图片幻灯片

map

[1]	Gong C, Li L, Li Z, Ji H, Stern A, Xia Y, Cao T, Bao W, Wang C, Wang Y, Qiu Z Q, Cava R J, Louie S G, Xia J, Zhang X 2017 Nature 546 265 Google Scholar
[2]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[3]	An M, Dong S 2020 APL Mater. 8 110704 Google Scholar
[4]	Ataca C, Sahin H, Ciraci S 2012 J. Phys. Chem. C 116 8983 Google Scholar
[5]	Du Y C, Yang L M, Liu H, Ye P D 2014 APL Mater. 2 092510 Google Scholar
[6]	Li G P, Yao K L, Gao G Y 2018 Nanotechnology 29 015204 Google Scholar
[7]	Li X X, Fan Z Q, Liu P Z, Chen M L, Liu X, Jia C K, Sun D M, Jiang X W, Han Z, Bouchiat V, Guo J J, Chen J H, Zhang Z D 2017 Nat. Commun. 8 970 Google Scholar
[8]	Yuan J, Chen Y, Xie Y, Zhang X, Rao D, Guo Y, Yan X, Feng Y P, Cai Y 2020 Proc. Natl. Acad. Sci. U.S.A. 117 6362 Google Scholar
[9]	An Y P, Gong S J, Hou Y S, Li J, Wu R Q, Jiao Z Y, Wang T X, Jiao J T 2020 J. Phys. Condens. Matter 32 055503 Google Scholar
[10]	An Y P, Hou Y S, Wang H, Li J, Wu R Q, Wang T X, Da H X, Jiao J T 2019 Phys. Rev. A 11 064031 Google Scholar
[11]	An Y P, Jiao J T, Hou Y S, Wang H, Wu D P, Wang T X, Fu Z M, Xu G L, Wu R Q 2018 Phys. Chem. Chem. Phys. 20 21552 Google Scholar
[12]	An Y P, Jiao J T, Hou Y S, Wang H, Wu R Q, Liu C, Chen X N, Wang T X, Wang K 2019 J. Phys. Condens. Matter 31 065301 Google Scholar
[13]	Feng B, Zhang J, Zhong Q, Li W, Li S, Li H, Cheng P, Meng S, Chen L, Wu K 2016 Nat. Chem. 8 563 Google Scholar
[14]	Mannix A J, Zhou X F, Kiraly B, Wood J D, Alducin D, Myers B D, Liu X, Fisher B L, Santiago U, Guest J R, Yacaman M J, Ponce A, Oganov A R, Hersam M C, Guisinger N P 2015 Science 350 1513 Google Scholar
[15]	Arcudia J, Kempt R, Cifuentes-Quintal M E, Heine T, Merino G 2020 Phys. Rev. Lett. 125 196401 Google Scholar
[16]	Jin Z H, Mullen J T, Kim K W 2016 Appl. Phys. Lett. 109 053108 Google Scholar
[17]	Lu J, Fan Z Q, Gong J, Chen J Z, ManduLa H, Zhang Y Y, Yang S Y, Jiang X W 2018 Phys. Chem. Chem. Phys. 20 5699 Google Scholar
[18]	Sibari A, Kerrami Z, Kara A, Benaissa M 2020 J. Appl. Phys. 127 225703 Google Scholar
[19]	An Y P, Wang K, Gong S J, Hou Y S, Ma C L, Zhu M F, Zhao C X, Wang T X, Ma S H, Wang H Y, Wu R Q, Liu W M 2021 npj Comput. Mater. 7 45 Google Scholar
[20]	Feng Y L, Wang Z L, Zuo X, Gao G Y 2022 Appl. Phys. Lett. 120 092405 Google Scholar
[21]	Gao Y F, Liao J B, Wang H Y, Wu Y, Li Y L, Wang K, Ma C L, Gong S J, Wang T X, Dong X, Jiao Z Y, An Y P 2022 Phys. Rev. A 18 034033 Google Scholar
[22]	Yan H J, Guan Q Y, Chen H F, Cui X Y, Shu Z, Liang D, Wang B W, Cai Y Q 2022 J. Mater. Chem. A 10 23744 Google Scholar
[23]	Liu Q, Li J J, Wu D, Deng X Q, Zhang Z H, Fan Z Q, Chen K Q 2021 Phys. Rev. B 104 045412 Google Scholar
[24]	Fan Z Q, Jiang X W, Chen J Z, Luo J W 2018 ACS Appl. Mater. Interfaces 10 19271 Google Scholar
[25]	Fan Z Q, Jiang X W, Luo J W, Jiao L Y, Huang R, Li S S, Wang L W 2017 Phys. Rev. B 96 165402 Google Scholar
[26]	Fan Z Q, Zhang Z H, Yang S Y 2020 Nanoscale 12 21750 Google Scholar
[27]	王贺岩, 高怡帆, 廖家宝, 陈俊彩, 李怡莲, 吴怡, 徐国亮, 安义鹏 2022 71 097502 Google Scholar Wang H Y, Gao Y F, Liao J B, Chen J C, Li Y L, Wu Y, Xu G L, An Y P 2022 Acta Phys. Sin. 71 097502 Google Scholar
[28]	Chen J C, Guo Y L, Ma C L, Gong S J, Zhao C X, Wang T X, Dong X, Jiao Z Y, Ma S H, Xu G L, An Y P 2023 Phys. Rev. A 19 054013 Google Scholar
[29]	Chen S B, Huang C X, Sun H S, Ding J F, Jena P, Kan E 2019 J. Phys. Chem. C 123 17987 Google Scholar
[30]	Dayen J F, Ray S J, Karis O, Vera-Marun I J, Kamalakar M V 2020 Appl. Phys. Rev. 7 011303 Google Scholar
[31]	Žutić I, Fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323 Google Scholar
[32]	Lin H L, Yan F G, Hu C, Zheng Y H, Sheng Y, Zhu W K, Wang Z, Zheng H Z, Wang K Y 2022 Nanoscale 14 2352 Google Scholar
[33]	Zhu W K, Xie S H, Lin H L, Zhang G J, Wu H, Hu T G, Wang Z, Zhang X M, Xu J H, Wang Y J, Zheng Y H, Yan F G, Zhang J, Zhao L X, Patané A, Zhang J, Chang H X, Wang K Y 2022 Chin. Phys. Lett. 39 128501 Google Scholar
[34]	Zhu W K, Lin H L, Yan F G, Hu C, Wang Z, Zhao L X, Deng Y C, Kudrynskyi Z R, Zhou T, Kovalyuk Z D, Zheng Y H, Patanè A, Žutić I, Li S S, Zheng H Z, Wang K Y 2021 Adv. Mater. 33 2104658 Google Scholar
[35]	Zhu W K, Zhu Y M, Zhou T, Zhang X P, Lin H L, Cui Q R, Yan F G, Wang Z, Deng Y C, Yang H X, Zhao L X, Žutić I, Belashchenko K D, Wang K Y 2023 Nat. Commun. 14 5371 Google Scholar
[36]	Wang Z A, Xue W S, Yan F G, Zhu W K, Liu Y, Zhang X H, Wei Z M, Chang K, Yuan Z, Wang K Y 2023 Nano Lett. 23 710 Google Scholar
[37]	Ugeda M M, Brihuega I, Guinea F, Gómez-Rodríguez J M 2010 Phys. Rev. Lett. 104 096804 Google Scholar
[38]	Mishra R, Zhou W, Pennycook S J, Pantelides S T, Idrobo J C 2013 Phys. Rev. B 88 144409 Google Scholar
[39]	Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler K L, Zhong D, Schmidgall E, McGuire M A, Cobden D H, Yao W, Xiao D, Jarillo-Herrero P, Xu X 2017 Nature 546 270 Google Scholar
[40]	Zhang Z W, Shang J Z, Jiang C Y, Rasmita A, Gao W B, Yu T 2019 Nano Lett. 19 3138 Google Scholar
[41]	Cai X H, Song T C, Wilson N P, Clark G, He M H, Zhang X O, Taniguchi T, Watanabe K, Yao W, Xiao D, McGuire M A, Cobden D H, Xu X D 2019 Nano Lett. 19 3993 Google Scholar
[42]	Rosenberg E, DeStefano J M, Guo Y, Oh J S, Hashimoto M, Lu D, Birgeneau R J, Lee Y, Ke L, Yi M, Chu J-H 2022 Phys. Rev. B 106 115139 Google Scholar
[43]	Zelenskiy A, Monchesky T L, Plumer M L, Southern B W 2022 Phys. Rev. B 106 144433 Google Scholar
[44]	Yi X W, Ma X Y, Zhang Z, Liao Z W, You J Y, Su G 2022 Phys. Rev. B 106 L220505 Google Scholar
[45]	Ghimire N J, Dally R L, Poudel L, Jones D C, Michel D, Magar N T, Bleuel M, McGuire M A, Jiang J S, Mitchell J F, Lynn J W, Mazin I I 2020 Sci. Adv. 6 eabe2680 Google Scholar
[46]	Kang M G, Ye L D, Fang S A, You J S, Levitan A, Han M Y, Facio J I, Jozwiak C, Bostwick A, Rotenberg E, Chan M K, McDonald R D, Graf D, Kaznatcheev K, Vescovo E, Bell D C, Kaxiras E, van den Brink J, Richter M, Prasad Ghimire M, Checkelsky J G, Comin R 2020 Nat. Mater. 19 163 Google Scholar
[47]	Li M, Wang Q, Wang G, Yuan Z, Song W, Lou R, Liu Z, Huang Y, Liu Z, Lei H, Yin Z, Wang S 2021 Nat. Commun. 12 3129 Google Scholar
[48]	Ye L D, Kang M G, Liu J W, von Cube F, Wicker C R, Suzuki T, Jozwiak C, Bostwick A, Rotenberg E, Bell D C, Fu L, Comin R, Checkelsky J G 2018 Nature 555 638 Google Scholar
[49]	Yin J X, Zhang S S, Li H, Jiang K, Chang G Q, Zhang B J, Lian B, Xiang C, Belopolski I, Zheng H, Cochran T A, Xu S Y, Bian G, Liu K, Chang T R, Lin H, Lu Z Y, Wang Z Q, Jia S, Wang W H, Hasan M Z 2018 Nature 562 91 Google Scholar
[50]	Xu X T, Yin J X, Ma W, Tien H J, Qiang X B, Reddy P V S, Zhou H, Shen J, Lu H Z, Chang T R, Qu Z, Jia S 2022 Nat. Commun. 13 1197 Google Scholar
[51]	Sun Z Y, Zhou H, Wang C X, Kumar S, Geng D Y, Yue S S, Han X, Haraguchi Y, Shimada K, Cheng P, Chen L, Shi Y G, Wu K H, Meng S, Feng B J 2022 Nano Lett. 22 4596 Google Scholar
[52]	Jiang J, Liang Q, Meng R, Yang Q, Tan C, Sun X, Chen X 2017 Nanoscale 9 2992 Google Scholar
[53]	Smidstrup S, Stradi D, Wellendorff J, Khomyakov P A, Vej-Hansen U G, Lee M E, Ghosh T, Jónsson E, Jónsson H, Stokbro K 2017 Phys. Rev. B 96 195309 Google Scholar
[54]	Brandbyge M, Mozos J L, Ordejón P, Taylor J, Stokbro K 2002 Phys. Rev. B 65 165401 Google Scholar
[55]	Marmolejo-Tejada J M, Dolui K, Lazic P, Chang P H, Smidstrup S, Stradi D, Stokbro K, Nikolić B K 2017 Nano Lett. 179 5626 Google Scholar
[56]	Smidstrup S, Markussen T, Vancraeyveld P, Wellendorff J, Schneider J, Gunst T, Verstichel B, Stradi D, Khomyakov P A, Vej-Hansen U G, Lee M E, Chill S T, Rasmussen F, Penazzi G, Corsetti F, Ojanperä A, Jensen K, Palsgaard M L N, Martinez U, Blom A, Brandbyge M, Stokbro K 2020 J. Phys. Condens. Matter 32 015901 Google Scholar
[57]	van Setten M J, Giantomassi M, Bousquet E, Verstraete M J, Hamann D R, Gonze X, Rignanese G M 2017 Comput. Phys. Commun. 226 39 Google Scholar
[58]	Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865 Google Scholar
[59]	Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188 Google Scholar
[60]	Mortazavi B, Zhuang X, Rabczuk T 2022 Appl. Phys. A 128 934 Google Scholar
[61]	Meng R S, Pereira L D, Locquet J P, Afanas'ev V, Pourtois G, Houssa M 2022 npj Comput. Mater. 8 230 Google Scholar
[62]	Lado J L, Fernández-Rossier J 2017 2D Mater. 4 035002 Google Scholar
[63]	Daalderop G H O, Kelly P J, Schuurmans M F H 1990 Phys. Rev. B 41 11919 Google Scholar
[64]	姜楠, 李奥林, 蘧水仙, 勾思, 欧阳方平 2022 71 206303 Google Scholar Jiang N, Li A L, Qu S X, Gou S, Ouyang F P 2022 Acta Phys. Sin. 71 206303 Google Scholar
[65]	Lv H Y, Lu W J, Shao D F, Liu Y, Sun Y P 2015 Phys. Rev. B 92 214419 Google Scholar
[66]	Webster L, Yan J A 2018 Phys. Rev. B 98 144411 Google Scholar
[67]	Stradi D, Martinez U, Blom A, Brandbyge M, Stokbro K 2016 Phys. Rev. B 93 155302 Google Scholar
[68]	Gunst T, Markussen T, Stokbro K, Brandbyge M 2016 Phys. Rev. B 93 035414 Google Scholar
[69]	Lee I H, Martin R M 1997 Phys. Rev. B 56 7197 Google Scholar
[70]	Büttiker M, Imry Y, Landauer R, Pinhas S 1985 Phys. Rev. B 31 6207 Google Scholar

[1]	柯少秋, 叶先峰, 张昊俊, 聂晓蕾, 陈天天, 刘承姗, 朱婉婷, 魏平, 赵文俞. 正负磁阻共存的Fe/Bi_0.5Sb_1.5Te₃热电磁薄膜. , 2024, 73(22): 227301. doi: 10.7498/aps.73.20240701
[2]	任延英, 李雅宁, 柳洪盛, 徐楠, 郭坤, 徐朝辉, 陈鑫, 高峻峰. 过渡金属元素掺杂对磁铁矿磁矩及磁各向异性的调控. , 2024, 73(6): 066104. doi: 10.7498/aps.73.20231744
[3]	姜舟, 蒋雪, 赵纪军. 二维kagome晶格过渡金属酞菁基异质结的电子性质. , 2023, 72(24): 247502. doi: 10.7498/aps.72.20230921
[4]	卿煜林, 彭小莉, 胡爱元. 自旋为1的双层平方晶格阻挫模型的相变. , 2022, 71(4): 047501. doi: 10.7498/aps.71.20211685
[5]	孟婧, 冯心薇, 邵倾蓉, 赵佳鹏, 谢亚丽, 何为, 詹清峰. 具有不同交换偏置方向的外延FeGa/IrMn双层膜的磁各向异性与磁化翻转. , 2022, 71(12): 127501. doi: 10.7498/aps.71.20220166
[6]	王贺岩, 高怡帆, 廖家宝, 陈俊彩, 李怡莲, 吴怡, 徐国亮, 安义鹏. 二维NiBr₂单层自旋电子输运以及光电性质. , 2022, 71(9): 097502. doi: 10.7498/aps.71.20212384
[7]	蒋小红, 秦泗晨, 幸子越, 邹星宇, 邓一帆, 王伟, 王琳. 二维磁性材料的物性研究及性能调控. , 2021, 70(12): 127801. doi: 10.7498/aps.70.20202146
[8]	杨雪, 杨青慧, 张怀武, 文岐业, 白飞明, 钟智勇, 张鼎, 黄建涛. 面外取向的(BiTm)₃(GaFe)₅O₁₂磁光单晶薄膜制备及取向机理分析. , 2021, 70(10): 107801. doi: 10.7498/aps.70.20202209
[9]	黄玉昊, 张贵涛, 王如倩, 陈乾, 王金兰. 二维双金属铁磁半导体CrMoI₆的电子结构与稳定性. , 2021, 70(20): 207301. doi: 10.7498/aps.70.20210949
[10]	文林, 胡爱元. 双二次交换作用和各向异性对反铁磁体相变温度的影响. , 2020, 69(10): 107501. doi: 10.7498/aps.69.20200077
[11]	刘祥, 米文博. Verwey相变处Fe₃O₄的结构、磁性和电输运特性. , 2020, 69(4): 040505. doi: 10.7498/aps.69.20191763
[12]	卢启海, 唐晓莉, 宋玉哲, 左显维, 韩根亮, 闫鹏勋, 刘维民. 氮化铁薄膜晶相合成热分析及其磁性. , 2019, 68(11): 118101. doi: 10.7498/aps.68.20182195
[13]	曹永泽, 赵越. 交变力磁力显微镜: 在三维空间同时观测静态和动态磁畴. , 2019, 68(16): 168502. doi: 10.7498/aps.68.20190510
[14]	肖嘉星, 鲁军, 朱礼军, 赵建华. 垂直磁各向异性L10-Mn1.67Ga超薄膜分子束外延生长与磁性研究. , 2016, 65(11): 118105. doi: 10.7498/aps.65.118105
[15]	聂帅华, 朱礼军, 潘东, 鲁军, 赵建华. 分子束外延制备的垂直易磁化MnAl薄膜结构和磁性. , 2013, 62(17): 178103. doi: 10.7498/aps.62.178103
[16]	胡艳春, 王艳文, 张克磊, 王海英, 马恒, 路庆凤. 空穴掺杂Sr2FeMoO6的晶体结构及磁性研究. , 2012, 61(22): 226101. doi: 10.7498/aps.61.226101
[17]	陈家洛, 狄国庆. 磁各向异性热电效应对自旋相关器件的影响. , 2012, 61(20): 207201. doi: 10.7498/aps.61.207201
[18]	敖琪, 张瓦利, 张熠, 吴建生. Nd-Fe-B/FeCo多层纳米复合膜的结构和磁性. , 2007, 56(2): 1135-1140. doi: 10.7498/aps.56.1135
[19]	郭玉献, 王劼, 徐彭寿, 李红红, 蔡建旺. Co0.9Fe0.1薄膜面内元素分辨的磁各向异性. , 2007, 56(2): 1121-1126. doi: 10.7498/aps.56.1121
[20]	李锐鹏, 王　劼, 李红红, 郭玉献, 王锋, 胡志伟. 软x射线磁性圆二色吸收谱研究铁单晶薄膜的面内磁各向异性. , 2005, 54(8): 3851-3855. doi: 10.7498/aps.54.3851

2023年72卷247503补充材料.pdf

计量

文章访问数: 4203
PDF下载量: 328
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板

二维磁性半导体笼目晶格Nb₃Cl₈单层的磁性及自旋电子输运性质

Magnetism and spin transport properties of two-dimensional magnetic semiconductor kagome lattice Nb₃Cl₈ monolayer

摘要

Abstract

作者及机构信息

河南师范大学物理学院, 新乡　453007

通信作者: 安义鹏, ypan@htu.edu.cn

Authors and contacts

School of Physics, Henan Normal University, Xinxiang 453007, China

Corresponding author: An Yi-Peng, ypan@htu.edu.cn

文章全文 : translate this paragraph

补充材料

参考文献

施引文献

目录

计量

作者中心

审稿中心

关于期刊

关于我们

搜索

留言板

二维磁性半导体笼目晶格Nb3Cl8单层的磁性及自旋电子输运性质

Magnetism and spin transport properties of two-dimensional magnetic semiconductor kagome lattice Nb3Cl8 monolayer

河南师范大学物理学院, 新乡 453007

通信作者: 安义鹏, ypan@htu.edu.cn

School of Physics, Henan Normal University, Xinxiang 453007, China

Corresponding author: An Yi-Peng, ypan@htu.edu.cn

目录

计量

出版历程

作者中心

审稿中心

关于期刊

关于我们

二维磁性半导体笼目晶格Nb₃Cl₈单层的磁性及自旋电子输运性质

Magnetism and spin transport properties of two-dimensional magnetic semiconductor kagome lattice Nb₃Cl₈ monolayer

河南师范大学物理学院, 新乡　453007