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结合器件仿真软件Sentaurus TCAD，建立了GaAs赝高电子迁移率晶体管器件的电磁脉冲损伤模型.基于此模型，从信号参数和外接电阻两个方面出发讨论了外界条件对器件电磁脉冲损伤效应的影响.结果表明，信号参数的改变能够显著影响器件的损伤时间：信号幅度通过改变器件的吸收能量速度来影响器件的损伤效应，其与器件损伤时间成反比；信号上升时间的改变能够提前或延迟器件的击穿点，其与器件损伤时间成正比.器件外接电阻能够减弱器件的电流沟道，进而延缓器件的损伤进程，且源极外接电阻的影响更加明显.
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关键词:
- GaAs赝高电子迁移率晶体管 /
- 电磁脉冲 /
- 外界条件 /
- 损伤过程
Electronic system and device are vulnerable under intensive electromagnetic pulse (EMP) environment, where low noise amplifer (LNA) is a typical sensitive instance for electromagnetic energy. This work focuses on the EMP-induced damage effect of GaAs pseudomorphic high electron mobility transistor (PHEMT), which is the core part of LNA. Using the simulation softeware Sentaurus TCAD, an EMP-induced damage model of the GaAs PHEMT is established in this paper, and verified through the experimental result. It is shown that the damage position of the device under the injection EMP exists in the center area under gate terminal. Based on this model and aiming at EMP parameters and external resistances, the influence of the external conditions on the damage effect of the device is investigated. The results indicate that the damage time is related to EMP parameters obviously:1) the damage time is inversely proportional to EMP amplitude since higher power density is absorbed under a stronger EMP; 2) the damage time is in direct proportion to signal rising time since the breakdown time is postponed under EMP with a slower rising edge. Furthermore, it is found that a load resistor is able to weaken current channel which is effective in delaying the damage process, and this effect is more obvious, with load resistor connected with source terminal. It should be noted that the results are beneficial to and valuable in hardening method against EMP of semiconductor devices. It is feasible to design external circuit protection units, aiming at attenuating signal amplitude and increasing the rising time of injected pulse. Another effectual approach is to enlarge the source series resistance under the premise of the performance meeting the requirements.-
Keywords:
- GaAs PHEMT /
- electromagnetic pulse /
- external condition /
- damage process
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[1] Mansson D, Thottappillil R, Backstrom M, Lunden O 2008 IEEE Trans. Electronmagn. Compat. 50 101
[2] Hattori Y, Tadano H, Nagase H 2001 Electron. Commun. Japan, Part 1 84 18
[3] Kim K, Iliadis A A, Granatstein V L 2004 Solid-State Electron. 48 1795
[4] Zhou H A, Du Z W, Gong K 2005 High Power Laser and Particle Beams 17 1861 (in Chinese)[周怀安, 杜正伟, 龚克2005强激光与粒子束17 1861]
[5] Kim K, Iliadis A A 2010 Solid-State Electron. 54 18
[6] Chai C C, Xi X W, Ren X R, Yang Y T, Ma Z Y 2010 Acta Phys. Sin. 59 8118 (in Chinese)[柴常春, 席晓文, 任兴荣, 杨银堂, 马振洋2010 59 8118]
[7] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese)[马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌2012 61 078501]
[8] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Zhao Y B 2012 Chin. Phys. B 21 058502
[9] Ma Z Y, Chai C C, Ren X R, Yang Y T, Zhao Y B, Qiao L P 2013 Chin. Phys. B 22 028502
[10] Ren X R, Chai C C, Ma Z Y, Yang Y T, Qiao L P, Shi C L 2013 Acta Phys. Sin. 62 068501 (in Chinese)[任兴荣, 柴常春, 马振洋, 杨银堂, 乔丽萍, 石春蕾2013 62 068501]
[11] Zhao Z G, Ma H G, Zhao G, Wang Y, Zhong L Q 2013 High Power Laser and Particle Beams. 25 1741 (in Chinese)[赵振国, 马弘舸, 赵刚, 王艳, 钟龙权2013强激光与粒子束25 1741]
[12] Zhang C B, Wang H G, Zhang J D 2014 High Power Laser and Particle Beams 26 063014 (in Chinese)[张存波, 王弘刚, 张建德2014强激光与粒子束26 063014]
[13] Zhang C B, Zhang J D, Wang H G, Du G X 2015 Microelectr. Reliab. 55 508
[14] Xi X W, Chai C C, Ren X R, Yang Y T, Ma Z Y, Wang J 2010 J. Semicond. 31 074009
[15] Chen X, Du Z W, Gong K 2007 High Power Laser and Particle Beams 19 1197 (in Chinese)[陈曦, 杜正伟, 龚克2007强激光与粒子束19 1197]
[16] Yu X H, Chai C C, Liu Y, Yang Y T, Xi X W 2015 Chin. Phys. B 24 048502
[17] Xi X W, Chai C C, Zhao G, Yang Y T, Yu X H, Liu Y 2016 Chin. Phys. B 25 048503
[18] Xi X W, Chai C C, Liu Y, Yang Y T, Fan Q Y, Shi C L 2016 Chin. Phys. B 25 088504
[19] Ren X R 2014 Ph. D. Dissertation (Xi'an:Xidian University) (in Chinese)[任兴荣2014博士学位论文(西安:西安电子科技大学)]
[20] Yu X H, Chai C C, Liu Y, Yang Y T, Fan Q Y 2015 Microelectr. Reliab. 55 1174
[21] Guo H X, Zhou H, Chen Y S, Zhang Y M, Gong R X, Guan Y, Han F B, Gong J C 2002 Microelectr. Comput. 19 17 (in Chinese)[郭红霞, 周辉, 陈雨生, 张义门, 龚仁喜, 关颖, 韩福斌, 龚建成2002微电子学与计算机19 17]
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