银纳米颗粒/多孔硅复合材料的制备与气敏性能研究

严达利; 李申予; 刘士余; 竺云

doi:10.7498/aps.64.137104

摘要

采用双槽电化学腐蚀法以电阻率为10-15 cm的p型100晶向的单晶硅片制备了孔径约为1.5 m, 孔深约为15-20 m的p型多孔硅, 并以此多孔硅作为基底采用无电沉积法通过调控沉积时间在其表面沉积了不同厚度的银纳米颗粒薄膜. 采用扫描电子显微镜和X 射线衍射仪表征了银纳米颗粒/多孔硅复合材料的形貌和微观结构, 结果表明银纳米颗粒较均匀的分布于多孔硅的表面上且沉积时间对产物的形貌有重要影响. 采用静态配气法在室温下研究了银纳米颗粒/多孔硅复合材料对NH3的气敏性能. 气敏测试结果表明沉积时间对产物的气敏性能影响较大. 当沉积时间较短时, 适量银纳米颗粒掺杂的多孔硅复合材料由于其较高的比表面积以及特殊的形貌和结构, 对NH3气体表现出较高的灵敏度、优良的响应/恢复性能. 室温下, 其对50 ppm 的NH3气体的气敏灵敏度可以达到5.8左右.

关键词:

Abstract

The p-type porous silicon layer with the aperture about 1.5 microns and hole depth about 15 microns is prepared by electrochemical etching of a p-type monocrystalline silicon wafer with a resistivity 10-15 cm and along [100] orientation in a double-tank cell which consists of the electrolyte (volume ratio HF: DMF=1:2). Silver nanoparticles film with different thickness has been deposited on porous silicon by the electroless deposition for different deposition times. Morphology and microstructure of the silver nanoparticles/porous silicon composite and ere studied by scanning electron microscope and X ray diffracmeter. Result indicates that the silver nanoparticles are uniformly distributed on the surface of porous silicon and the deposition time has an important influence on the morphology of the composite. The gas-sensing properties of the silver nanoparticles/porous silicon composite to NH3 are tested at room temperature by the static volumetric method. Results show that the deposition time has a significant impact on the gas-sensing properties of the silver nanoparticles/porous silicon. In a short deposition time, the composite with an appropriate amount of silver nanoparticles doped on the porous silicon shows good gas-sensing properties to NH3 with high sensitivity, fast response-recovery characteristic due to the high specific surface area and special microstructure. At room temperature, the gas sensor has a sensitivity of about 5.8 to 50 ppm NH3.

Keywords:

作者及机构信息

1.
天津师范大学物理与材料科学学院, 天津 300387;

2.
河北工业大学海洋科学与工程学院, 天津 300401

基金项目: 国家自然科学基金(批准号:11104203)和天津师范大学博士基金(批准号:52XB1416)资助的课题.

Authors and contacts

1.
College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China;

2.
School of Marine Science and Engineering, Hebei University of Technology, Tianjin 300130, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11104203), and the Tianjin Normal University Doctoral Foundation, China (Grant No. 52XB1416).

参考文献

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[2]	Li M D, Hu M, Zeng P, Ma S Y, Yan W J, Qin Y X 2013 Electrochim Acta 108 167
[3]	Li M D, Hu M, Liu Q L, Ma S Y, Sun P 2013 Appl Surf Sci. 268 188
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[6]	Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Li C Q 2013 Mater Lett. 112 12
[7]	Zeng P, Zhang P, Hu M, Ma S Y, Yan W J 2014 Chinese Physics B 23 58103
[8]	Ali N K, Hashim M R, Aziz A A 2008 Solid State Electron. 52 1071
[9]	Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波, 胡明, 张伟, 张绪瑞, 李德军, 王明霞 2007 56 4032]
[10]	Sun P, Hu M, Liu B, Sun F Y, Xu L J 2011 Acta Phys. Sin. 60 050704 (in Chinese) [孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 60 050704]
[11]	Balucani M, Nenzi P, Chubenko E, Klyshko A, Bondarenko V 2011 Journal of Nanoparticle Research. 13 5985
[12]	Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Qin Y X 2014 Sensor Actuat B-Chem. 192 341
[13]	Ma S Y, Hu M, Zeng P, Yan W J, Li M D 2013 Mater Lett. 99 57
[14]	Kanungo J, Saha H, Basu S 2010 Sensor Actuat B-Chem. 147 128
[15]	Yan W J, Hu M, Zeng P, Ma S Y, Li M D 2014 Appl. Surf. Sci. 292 551
[16]	S. Ozdemir, J. L. Gole 2010 Sensor Actuat B-Chem. 151 274
[17]	Yan D L, Hu M, Li S Y, Liang J R, Wu Y Q, Ma S Y 2014 Electrochim Acta. 115 297
[18]	Mareš J, Krištofik J, Hulicius E 1995 Thin Solid Films. 255 272
[19]	Hu M, Liu Q L, Jia D L, Li M D 2013 Acta Phys. Sin. 62 057102 (in Chinese) [胡明, 刘青林, 贾丁立, 李明达 2013 62 057102]
[20]	Sun P, Hu M, Li M D, Ma S Y 2012 Acta Physico-Chimica Sinica. 02 489
[21]	Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V La, Quercia L, Francia G Di, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sensor Actuat B-Chem. 68 74
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施引文献

[1]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chinese Physics B 21 58201
[2]	Li M D, Hu M, Zeng P, Ma S Y, Yan W J, Qin Y X 2013 Electrochim Acta 108 167
[3]	Li M D, Hu M, Liu Q L, Ma S Y, Sun P 2013 Appl Surf Sci. 268 188
[4]	Ozdemir S, Gole J L 2010 Sensor Actuat B-Chem. 151 274
[5]	Razi F, Rahimi F 2008 Sensor Actuat B-Chem. 132 40
[6]	Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Li C Q 2013 Mater Lett. 112 12
[7]	Zeng P, Zhang P, Hu M, Ma S Y, Yan W J 2014 Chinese Physics B 23 58103
[8]	Ali N K, Hashim M R, Aziz A A 2008 Solid State Electron. 52 1071
[9]	Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波, 胡明, 张伟, 张绪瑞, 李德军, 王明霞 2007 56 4032]
[10]	Sun P, Hu M, Liu B, Sun F Y, Xu L J 2011 Acta Phys. Sin. 60 050704 (in Chinese) [孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 60 050704]
[11]	Balucani M, Nenzi P, Chubenko E, Klyshko A, Bondarenko V 2011 Journal of Nanoparticle Research. 13 5985
[12]	Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Qin Y X 2014 Sensor Actuat B-Chem. 192 341
[13]	Ma S Y, Hu M, Zeng P, Yan W J, Li M D 2013 Mater Lett. 99 57
[14]	Kanungo J, Saha H, Basu S 2010 Sensor Actuat B-Chem. 147 128
[15]	Yan W J, Hu M, Zeng P, Ma S Y, Li M D 2014 Appl. Surf. Sci. 292 551
[16]	S. Ozdemir, J. L. Gole 2010 Sensor Actuat B-Chem. 151 274
[17]	Yan D L, Hu M, Li S Y, Liang J R, Wu Y Q, Ma S Y 2014 Electrochim Acta. 115 297
[18]	Mareš J, Krištofik J, Hulicius E 1995 Thin Solid Films. 255 272
[19]	Hu M, Liu Q L, Jia D L, Li M D 2013 Acta Phys. Sin. 62 057102 (in Chinese) [胡明, 刘青林, 贾丁立, 李明达 2013 62 057102]
[20]	Sun P, Hu M, Li M D, Ma S Y 2012 Acta Physico-Chimica Sinica. 02 489
[21]	Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V La, Quercia L, Francia G Di, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sensor Actuat B-Chem. 68 74
[22]	Salonen J, Lehto V P, Laine E 1997 Appl. Surf. Sci. 120 191

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