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采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数Keff 达到了3.6×105 J/m3, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.Co/Ni multilayers with Pt underlayers have been prepared by magnetron sputtering technique, and their perpendicular magnetic anisotropy (PMA) was studied by the anomalous Hall effect (AHE). The PMA of the samples can be studied by the intensity of Hall signal (RHall), remanence ratio (Mr/Ms), coercivity (HC) and the squarefless of the samples in the Hall hysteresis loops. A clear PMA is observed in the as-deposited amorphous Co/Ni multilayers. The PMA of Co/Ni multilayers is strongly dependent on the thicknesses of Pt, Co, and Ni, and the number of Co/Ni bilayers. After testing, the thicknesses of Pt, Co, and Ni, and the periodic number (n) of Co/Ni bilayers are determined to be 2 nm, 0.2 nm, 0.4 nm and 1 respectively. The optimum Co/Ni multilayer with excellent performance of PMA has a structureflexpressed as Pt(2)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2). The hysteresis loop of the sample with the field applied in plane is tested, showing the characteristics of hard axis typically. PMA can be measured by the anisotropy constant Keff which is determined by the competition of the interface anisotropy to the volume anisotropy. If the interface anisotropy is dominant, the sample will have PMA. The anisotropy constant Keff of Pt(2)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2) is 3.6×105 J/m3, illustrating that it has an excellent PMA, and the interface anisotropy of Co/Ni is the main factor that makes Keff a larger value. Since the thickness of magnetic layer in the optimum sample is only 0.8 nm and the total thickness of it less than 5 nm, the integration of the device can be studied further. Furthermore, the coercivity of an optimum Co/Ni multilayered sample is relatively small and can be increased by inserting an oxidation layer or by other ways.
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Keywords:
- Co/Ni multilayers /
- perpendicular magnetic anisotropy /
- anomalous Hall effect /
- anisotropy constant
[1] Liu L, Moriyama T, Ralph D C, Buhrman R A 2009 Appl. Phys. Lett. 94 122508
[2] Mangin S, Ravelosona D, Katine J A, Carey M J, Terris B D 2006 Nat. Mater. 5 210
[3] Meng H, Wang J P 2006 Appl. Phys. Lett. 88 172506
[4] Kou S P, Lu R, Liang J Q 2003 Chin. Phys. Lett. 19 1525
[5] Yu R, Zhang W, Weng H M, Dai X, Fang Z 2010 Phys. 39 618 (in Chinese) [余睿, 张薇, 翁红明, 戴希, 方忠 2010 物理 39 618]
[6] Kohn W, Luttinger J M 1957 Phys. Rev. 108 590
[7] Luttinger J M 1958 Phys. Rev. 112 739
[8] Berger L 1970 Phys. Rev. B 2 4959
[9] Smith J 1973 Phys. Rev. B 8 2349
[10] Berger L 1973 Phys. Rev. B 8 2351
[11] Smith J 1976 Phys. Rev. B 17 1450
[12] McGuire T R, Gambino R J, Handley R C O 1980 The Hall Effect and Its Applications (Vol. 1) (New York: Plenum Publishing Corp.) pp137
[13] Carvello B, Ducruet C, Rodmacq B, Auffret S, Gautier E, Gaudin G, Dieny B 2009 Appl. Phys. Lett. 92 102508
[14] Seki T, Mitani S, Yakushiji K, Takanashi K 2006 Appl. Phys. Lett. 88 172504
[15] Zhang X, Shi L, Li J, Xia Y J, Shi Z, Zhou S M 2013 Chin. Phys. B 22 117803
[16] Chen W, Beaujour J M L, Loubens G, Keni A D, Sun J Z 2008 Appl. Phys. Lett. 92 012507
[17] Thiyagarajah N, Bae S, Joo H W, Han Y C, Kim J 2008 Appl. Phys. Lett. 92 062504
[18] Van Dijken S, Crofton M, CzaPkiewiez M, Zoladz M, Stobiecki T 2006 J. Appl.Phys. 99 083901
[19] Mishra S K, Radu F, Valencia S, Schmitz D, Schierle E, Drr H A, Eberhardt W 2010 Phys. Rev. B 81 212404
[20] Chen X, Liu H F, Han X F, Ji Y 2013 Acta Phys. Sin. 62 137501 (in Chinese) [陈希, 刘厚方, 韩秀峰, 姬扬 2013 62 137501]
[21] Nakayama, Kai T, Shimomura N, Amano M, Kitagawa E, Nagase T, Yoshikawa M, Kishi T, Ikegawa S, Yoda H 2008 J. Appl. Phys. 103 07A710
[22] Ueda K, Koyama T, Hiramatsu R, Chiba D, Fukami S, Tanigawa H, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y, Ono T 2012 Appl. Phys. Lett. 100 202407
[23] Ryu K-S, Thomas L, Yang S-H, Parkin S S P 2012 Appl. Phys. Express. 5 093006
[24] Lavrijsen R, Haazen P P J, Mure E, Franken J H, Kohlhepp J T, Swagten H J M, Koopsmans B 2012 Appl. Phys. Lett. 100 262408
[25] Tanigawa H, Ohshima N, Suzuki T, Suemitsu K, Kariyada E 2012 J. Appl. Phys., Part 1. 51 100202
[26] Wang R X, Xiao Y C, Zhao J L 2014 Acta Phys. Sin. 63 217601 (in Chinese) [王日兴, 肖运昌, 赵婧莉 2014 63 217601]
[27] Zhang P, Xie K X, Lin W W, Wu D, Sang H 2014 Appl. Phys. Lett. 104 082404
[28] Ding Y F, Jack H, Judy, Wang J P 2005 J. Appl. Phys. 97 10J117
[29] Jungblut R, oehoorn R C, Johnson M T, Johnson aan de Stegge J, Reinders A 1994 J. Appl. Phys. 75 6659
[30] Fu Y Q, Liu Y, Jin C, Yu G H 2009 Acta Phys. Sin. 58 7977 (in Chinese) [付艳强, 刘洋, 金川于广华 2009 58 7977]
[31] Johnsony M T, Bloemenzx P J H, Broedery F J A, Vries J J 1996 Rep. Prog. Phys. 59 1409
[32] Liu S, Ju H L, Yu G H, Li B H, Chen X B 2014 Chin. J. R. Mater. 38 762 (in Chinese) [刘帅, 俱海浪, 于广华, 李宝河, 陈晓白 2014 稀有金属 38 762]
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[1] Liu L, Moriyama T, Ralph D C, Buhrman R A 2009 Appl. Phys. Lett. 94 122508
[2] Mangin S, Ravelosona D, Katine J A, Carey M J, Terris B D 2006 Nat. Mater. 5 210
[3] Meng H, Wang J P 2006 Appl. Phys. Lett. 88 172506
[4] Kou S P, Lu R, Liang J Q 2003 Chin. Phys. Lett. 19 1525
[5] Yu R, Zhang W, Weng H M, Dai X, Fang Z 2010 Phys. 39 618 (in Chinese) [余睿, 张薇, 翁红明, 戴希, 方忠 2010 物理 39 618]
[6] Kohn W, Luttinger J M 1957 Phys. Rev. 108 590
[7] Luttinger J M 1958 Phys. Rev. 112 739
[8] Berger L 1970 Phys. Rev. B 2 4959
[9] Smith J 1973 Phys. Rev. B 8 2349
[10] Berger L 1973 Phys. Rev. B 8 2351
[11] Smith J 1976 Phys. Rev. B 17 1450
[12] McGuire T R, Gambino R J, Handley R C O 1980 The Hall Effect and Its Applications (Vol. 1) (New York: Plenum Publishing Corp.) pp137
[13] Carvello B, Ducruet C, Rodmacq B, Auffret S, Gautier E, Gaudin G, Dieny B 2009 Appl. Phys. Lett. 92 102508
[14] Seki T, Mitani S, Yakushiji K, Takanashi K 2006 Appl. Phys. Lett. 88 172504
[15] Zhang X, Shi L, Li J, Xia Y J, Shi Z, Zhou S M 2013 Chin. Phys. B 22 117803
[16] Chen W, Beaujour J M L, Loubens G, Keni A D, Sun J Z 2008 Appl. Phys. Lett. 92 012507
[17] Thiyagarajah N, Bae S, Joo H W, Han Y C, Kim J 2008 Appl. Phys. Lett. 92 062504
[18] Van Dijken S, Crofton M, CzaPkiewiez M, Zoladz M, Stobiecki T 2006 J. Appl.Phys. 99 083901
[19] Mishra S K, Radu F, Valencia S, Schmitz D, Schierle E, Drr H A, Eberhardt W 2010 Phys. Rev. B 81 212404
[20] Chen X, Liu H F, Han X F, Ji Y 2013 Acta Phys. Sin. 62 137501 (in Chinese) [陈希, 刘厚方, 韩秀峰, 姬扬 2013 62 137501]
[21] Nakayama, Kai T, Shimomura N, Amano M, Kitagawa E, Nagase T, Yoshikawa M, Kishi T, Ikegawa S, Yoda H 2008 J. Appl. Phys. 103 07A710
[22] Ueda K, Koyama T, Hiramatsu R, Chiba D, Fukami S, Tanigawa H, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y, Ono T 2012 Appl. Phys. Lett. 100 202407
[23] Ryu K-S, Thomas L, Yang S-H, Parkin S S P 2012 Appl. Phys. Express. 5 093006
[24] Lavrijsen R, Haazen P P J, Mure E, Franken J H, Kohlhepp J T, Swagten H J M, Koopsmans B 2012 Appl. Phys. Lett. 100 262408
[25] Tanigawa H, Ohshima N, Suzuki T, Suemitsu K, Kariyada E 2012 J. Appl. Phys., Part 1. 51 100202
[26] Wang R X, Xiao Y C, Zhao J L 2014 Acta Phys. Sin. 63 217601 (in Chinese) [王日兴, 肖运昌, 赵婧莉 2014 63 217601]
[27] Zhang P, Xie K X, Lin W W, Wu D, Sang H 2014 Appl. Phys. Lett. 104 082404
[28] Ding Y F, Jack H, Judy, Wang J P 2005 J. Appl. Phys. 97 10J117
[29] Jungblut R, oehoorn R C, Johnson M T, Johnson aan de Stegge J, Reinders A 1994 J. Appl. Phys. 75 6659
[30] Fu Y Q, Liu Y, Jin C, Yu G H 2009 Acta Phys. Sin. 58 7977 (in Chinese) [付艳强, 刘洋, 金川于广华 2009 58 7977]
[31] Johnsony M T, Bloemenzx P J H, Broedery F J A, Vries J J 1996 Rep. Prog. Phys. 59 1409
[32] Liu S, Ju H L, Yu G H, Li B H, Chen X B 2014 Chin. J. R. Mater. 38 762 (in Chinese) [刘帅, 俱海浪, 于广华, 李宝河, 陈晓白 2014 稀有金属 38 762]
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