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Study on simulation method for the thin film growth processes on atomic scale is currently a hot research field. The simulation method mainly aiming at nanometer scale model demands huge computational cost and memory cost. In order to solve the problem, a cellular method combined with Monte Carlo method is presented in this article to simulate the growth processes of thin film on micron scale. Based on cellular method for model representation and evolutionary computation, we greatly reduce the memory requirements and improve the efficiency of computation, and the Monte Carlo method is used to determine the particle migration. Moreover, specific research on the growth process of silicon nitride thin film is implemented, and the simulation results are compared with the experimental data and the molecular dynamics simulation results of the surface morphology and composition, so as to verify the effectiveness of this method.
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Keywords:
- thin film growth /
- cellular method /
- Monte Carlo method
[1] Wu Z Q, Wang B 2001 Film Growth (Beijing:Science Press) pp354-416 (in Chinese) [吴自勤, 王兵2001薄膜生长(北京: 科学出版社)第354–416页]
[2] Shan Y C 2006 Ph. D. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese) [单英春2006博士学位论文(哈尔滨: 哈尔滨工业大学)]
[3] Zhang P F, Zheng X P, He D Y, Li L 2007 Sci. China, Ser. G 37 1 (in Chinese) [张佩峰, 郑小平, 贺德衍, 李廉 2007 中国科学:G辑 37 1]
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[5] Vogl P, Hansen U, Fiorentini V 2002 Comput. Mater. Sci. 24 58
[6] Yang H J, Song Y X, Zheng S L, Jia P F 2013 Acta Phys. Sin. 62 208201 (in Chinese) [杨宏军, 宋亦旭, 郑树琳, 贾培发 2013 62 208201]
[7] Chiaramonte L, Colombo R, Fazio G 2012 Comput. Mater. Sci. 54 227
[8] Coltrin M E, Ho P, Moffat H K, Buss R J 2000 Thin Solid Films 365 251
[9] Smith D L, Alimonda A S, Chen C C, Ready S E, Wacker B 1990 J. Electrochem. Soc. 137 614
[10] Yacoubi K, Pantel C A, Scheid E, Couderc J P 1999 J. Electrochem. Soc. 146 3009
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[13] Jiang Z Z, Zheng Z 2008 Mater. Rev. 08 228 (in Chinese) [蒋志勇, 郑忠 2008 材料导报 08 228]
[14] Song X, Hao F, Liu Y M, Yang Y Z, Yin Z H 2014 Chin. Phys. B 23 016802
[15] Deng X D, Song Y X, Li J C, Pu Y K 2014 J. Appli. Phys. 115 054902
[16] Du Z H, Li S L, Chen Y, Liu P 2001 Parallel Programming Technology for High Performance Computing (Beijing: Tsinghua University Press) pp62-68 (in Chinese) [都志辉, 李三立, 陈渝, 刘鹏2001高性能计算并行编程技术(北京: 清华大学出版社)第62–68页]
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[1] Wu Z Q, Wang B 2001 Film Growth (Beijing:Science Press) pp354-416 (in Chinese) [吴自勤, 王兵2001薄膜生长(北京: 科学出版社)第354–416页]
[2] Shan Y C 2006 Ph. D. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese) [单英春2006博士学位论文(哈尔滨: 哈尔滨工业大学)]
[3] Zhang P F, Zheng X P, He D Y, Li L 2007 Sci. China, Ser. G 37 1 (in Chinese) [张佩峰, 郑小平, 贺德衍, 李廉 2007 中国科学:G辑 37 1]
[4] Lu X, Brault P, Bauchire J M, Thomann A L, Bedra L 2014 J. Phys. D: Appl. Phys. 47 224004
[5] Vogl P, Hansen U, Fiorentini V 2002 Comput. Mater. Sci. 24 58
[6] Yang H J, Song Y X, Zheng S L, Jia P F 2013 Acta Phys. Sin. 62 208201 (in Chinese) [杨宏军, 宋亦旭, 郑树琳, 贾培发 2013 62 208201]
[7] Chiaramonte L, Colombo R, Fazio G 2012 Comput. Mater. Sci. 54 227
[8] Coltrin M E, Ho P, Moffat H K, Buss R J 2000 Thin Solid Films 365 251
[9] Smith D L, Alimonda A S, Chen C C, Ready S E, Wacker B 1990 J. Electrochem. Soc. 137 614
[10] Yacoubi K, Pantel C A, Scheid E, Couderc J P 1999 J. Electrochem. Soc. 146 3009
[11] Zhu G, Lu G W, Li Y F, Lan J H, Zhang J, Zheng Q B, Huang Q S, Sun X, Xia H R 2006 J. Synth. Cryst. 35 1 (in Chinese) [朱阁, 卢贵武, 李英峰, 蓝建慧, 张军, 郑庆彬, 黄乔松, 孙洵, 夏海瑞 2006 人工晶体学报 35 1]
[12] Zhang G Y, Wu A M, Qin F W, Gong F Q, Jiang X 2009 Semicond. Optoelectron. 04 558 (in Chinese) [张广英, 吴爱民, 秦福文, 公发全, 姜辛 2009 半导体光电 04 558]
[13] Jiang Z Z, Zheng Z 2008 Mater. Rev. 08 228 (in Chinese) [蒋志勇, 郑忠 2008 材料导报 08 228]
[14] Song X, Hao F, Liu Y M, Yang Y Z, Yin Z H 2014 Chin. Phys. B 23 016802
[15] Deng X D, Song Y X, Li J C, Pu Y K 2014 J. Appli. Phys. 115 054902
[16] Du Z H, Li S L, Chen Y, Liu P 2001 Parallel Programming Technology for High Performance Computing (Beijing: Tsinghua University Press) pp62-68 (in Chinese) [都志辉, 李三立, 陈渝, 刘鹏2001高性能计算并行编程技术(北京: 清华大学出版社)第62–68页]
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