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利用混合物理化学气相沉积法在6H-SiC(001)衬底上制备干净的MgB2超导超薄膜.在本底气体压强、载气氢气流量等条件一定的情况下,改变B2H6流量及沉积时间,制备得到不同厚度的系列MgB2超薄膜样品,并研究了超导转变温度Tc、剩余电阻率(42K)、上临界磁场Hc2等与膜厚的关系.该系列超薄膜沿c轴外延生长,随膜厚度的变小,Tc(0)降低,(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于厚度为7.5 nm的MgB2超薄膜,Tc(0) =32.8 K,(42K) =118 cm,是迄今为止所观测到的厚度为7.5 nm的MgB2超薄膜最高的Tc值;对于厚度为10 nm的MgB2膜,Tc(0)=35.5 K,(42K)=17.7 cm,上临界磁场0Hc2估算为12 T左右,零磁场、4 K时的临界电流密度Jc=1.0107 A/cm2,是迄今为止10 nm厚MgB2超薄膜的最高Jc值,且其表面连接性良好,均方根粗糙度为0.731 nm.这预示MgB2超薄膜在超导纳米器件上具有广阔的应用前景.
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关键词:
- MgB2超薄膜 /
- 薄膜生长 /
- 氢气流量 /
- 混合物理化学气相沉积
We fabricate MgB2 ultra-thin films via hybrid physical-chemical vapor deposition technique. Under the same background pressure, the same H2 flow rate, by changing B2H6 flow rate and deposition time, we fabricate a series of ultra-thin films with thickness ranging from 5 nm to 80 nm. These films grow on SiC substrate, and are all c-axis epitaxial. We study the Volmer-Weber mode in the film formation. As the thickness increases, critical transition temperature Tc(0) also increases and the residual resistivity decreases. Especially, a very high Tc(0) 32.8 K for the 7.5 nm film, and Tc(0) 36.5 K, low residual resistivity (42 K) 17.7 cm, and extremely high critical current density Jc (0 T,4 K) 107 A/cm2, upper critical field Hc2(0) for 10 nm film are achieved. Moreover, by optimizing the H2 flow rate, we obtain relatively smooth surface of the 10 nm epitaxial film, with a root-mean-square roughness of 0.731 nm, which makes them well qualified for device applications.-
Keywords:
- MgB2 ultra-thin film /
- film growth /
- H2 flowing rate /
- hybrid physical-chemical vapor deposition
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[11] Zhuang C G 2008 Ph.D. Dissertation (Beijing:Peking University) p77 (in Chinese) [庄承钢 2008 博士学位论文(北京:北京大学) 第77页]
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[23] Meng X F, Amous R S, Pierce F S, Wang K M, Xu C H, Deaver B S Jr, Poon S J 1991 IEEE Trans. Magn. 27 3305
[24] Zeng X H, Pogrebnyakov A V, Zhu M H, Jones J E, Xi X X, Xu S Y, Wertz E, Li Q, Redwing J M, Lettieri J, Vaithyanathan V, Schlom D G, Liu Z K, Trithaveesak O, Schubert J 2003 Appl. Phys. Lett. 82 2097
[25] Zhuang C G, Meng S, Zhang C Y, Feng Q R, Gan Z Z, Yang H, Jing Y, Wen H H, Xi X X 2008 J. Appl. Phys. 104 013924
[26] Zhang Y H 2009 Superconductivity Physics (3rd ed)(Hefei: University of Science and Technology of China Press) p236 (in Chinese) [张裕恒 2009 超导物理 (第3版) (合肥:中国科学技术大学出版社) 第236页 ]
[27] Gao J L, Zhou J Z, Zhang L 2008 Physics 37 493 (in Chinese) [高建龙、周建中、张 莉 2008 物理 37 493]
[28] Xu S Y, Li Q, Wertz E, Hu Y F, Pogrebnyakov A V, Zeng X H, Xi X X, Redwing J M 2003 Phys. Rev. B 68 224501
[29] Wu Y S, Zhao Y, Wexler D, Kim J H, Dou S X 2008 Physica C 468 218
[30] Lee S, Chen K, Baek S H, Dai W Q, Moeckly B H, Li Q, Xi X X, Rzchowski M S, Eom C B 2009 IEEE Trans. Appl. Supercond. 19 2811
[31] Yamamoto H, Tsukamoto A, Hasegawa H, Saitoh K, Okada M, Kitaguchi H 2005 Physica C 426—431 1444
[32] Zhu H M, Zhang Y B, Sun X L, Xiong W J, Zhou S P 2007 Physica C 452 11
[33] Gubin A I, Il’in K S, Vitusevich S A, Siegel M, Klein N 2005 Phys. Rev. B 72 064503
[34] Suh J D, Sung G Y 1995 Physica C 252 54
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[1] Nagamatsu J, Nakagawa N, Muranaka T,Zenitani Y,Akimitsu J 2001 Nature 410 63
[2] Larbalestier D C, Cooley L D, Rikel M O, Polyanskii A A, Jiang J, Patnaik S, Cai X Y, Feldmann D M, Gurevich A, Squitieri A A, Naus M T, Eom C B, Hellstrom E E, Cava R J, Regan K A, Rogado N, Hayward M A, He T, Slusky J S, Khalifah P, Inumaru K, Haas M 2001 Nature 410 186
[3] Scanlan R M, Malozemoff A P, Larbalestier D C 2004 Proc. IEEE 92 1639
[4] ter Brake H J M, Buchholz F I, Burnell G, Claeson T, Crété D, Febvre P, Gerritsma G J, Hilgenkamp H, Humphreys R, Ivanov Z, Jutzi W, Khabipov M I, Mannhart J, Meye H G, Niemeyer J, Ravex A, Rogalla H, Russo M, Satchell J, Siegel M, Töpfer H, Uhlmann F H, Villégier J C, Wikborg E, Winkler D, Zorin A B 2006 Physica C 439 1
[5] Shimakage H, Tatsumi M, Wang Z 2008 Supercond. Sci. Technol. 21 095009
[6] Zeng X H, Alexe J V, Pogrebnyakov A V, Kotcharov A E, Jones J, Xi X X, Lysczek E M, Redwing J M, Xu S Y, Li Q, Lettieri J, Schlom D G, Tian W, Pan X Q, Liu Z K 2002 Nat. Mater. 1 35
[7] Xi X X, Pogrebnyakov A V, Xu S Y, Chen K, Cui Y, Maertz E C, Zhuang C G, Li Q, Lamborn D R, Redwing J M, Liu Z K, Soukiassian A, Schlom D G, Weng X J, Dickey E C, Chen Y B, Tian W, Pan X Q, Cybart S A, Dynes R C 2007 Physica C 456 22
[8] Zhuang C G, Tan T, Wang Y Z, Bai S S, Ma X B, Yang H, Zhang G H, He Y S, Wen H H, Xi X X, Feng Q R, Gan Z Z 2009 Supercond. Sci. Technol. 22 025002
[9] Espiau de Lamastre R, Odier P, Villégiera J C 2007 Appl. Phys. Lett. 91 232501
[10] Bouchiat V, Faucher M, Thirion C, Wernsdorfer W, Fournier T, Pannetier B 2001 Appl. Phys. Lett. 79 123
[11] Zhuang C G 2008 Ph.D. Dissertation (Beijing:Peking University) p77 (in Chinese) [庄承钢 2008 博士学位论文(北京:北京大学) 第77页]
[12] Pogrebnyakov A V, Tenne D A, Soukiassian A, Xi X X, Redwing J M, Vaithyanathan V, Schlom D G, Xu S Y, Li Q, Johannes M D, Kasinathan D, Pickett W E 2004 Phys. Rev. Lett. 93 147006
[13] Zheng W T 2004 Thin Films Materials and Thin Films Techniques (Beijing: Chemical Industry Press) p166 (in Chinese) [郑伟涛 2004 薄膜材料与薄膜技术 (北京:化学工业出版社) 第166页]
[14] Szalowski K 2006 Phys. Rev. B 74 094501
[15] Ader J P, Buzdin A I 2006 Phys. Lett. A 351 343
[16] Pogrebnyakov A V, Redwing J M, Jones J E, Xi X X, Xu S Y, Li Q 2003 Appl. Phys. Lett. 82 16
[17] Levchenko I, Baranov O 2003 Vacuum 72 205
[18] Reso D, Silinskas M, Lisker M, Gewalt A, Burte E P 2011 Thin Solid Films 519 2150
[19] Yu W, Du J, Zhang L, Cui S K, Lu W B, Fu G S 2008 J. Inorg. Mater. 23 540 (in Chinese) [于 威、杜 杰、张 丽、崔双魁、路万兵、傅广生 2008 无机材料学报 23 540]
[20] Yu W, Cui S K, Lu W B, Wang C S, Fu G S 2006 Chin. J. Semicond. 27 1767 (in Chinese) [于 威、崔双魁、路万兵、王春生、傅广生 2006 半导体学报 27 1767]
[21] Chen J Z, Liu J H 2009 Introduction to Nanomaterials Science (Beijing: Higher Education Press) pp4—21 (in Chinese) [陈敬中、刘剑洪 2009纳米材料科学导论(北京:高等教育出版社) 第4—21页]
[22] Blank D H A, Booij W, Hilgenkamp H, Vulink B, Veldhuis D, Rogalla H 1995 IEEE Trans. Appl. Supercond. 5 2786
[23] Meng X F, Amous R S, Pierce F S, Wang K M, Xu C H, Deaver B S Jr, Poon S J 1991 IEEE Trans. Magn. 27 3305
[24] Zeng X H, Pogrebnyakov A V, Zhu M H, Jones J E, Xi X X, Xu S Y, Wertz E, Li Q, Redwing J M, Lettieri J, Vaithyanathan V, Schlom D G, Liu Z K, Trithaveesak O, Schubert J 2003 Appl. Phys. Lett. 82 2097
[25] Zhuang C G, Meng S, Zhang C Y, Feng Q R, Gan Z Z, Yang H, Jing Y, Wen H H, Xi X X 2008 J. Appl. Phys. 104 013924
[26] Zhang Y H 2009 Superconductivity Physics (3rd ed)(Hefei: University of Science and Technology of China Press) p236 (in Chinese) [张裕恒 2009 超导物理 (第3版) (合肥:中国科学技术大学出版社) 第236页 ]
[27] Gao J L, Zhou J Z, Zhang L 2008 Physics 37 493 (in Chinese) [高建龙、周建中、张 莉 2008 物理 37 493]
[28] Xu S Y, Li Q, Wertz E, Hu Y F, Pogrebnyakov A V, Zeng X H, Xi X X, Redwing J M 2003 Phys. Rev. B 68 224501
[29] Wu Y S, Zhao Y, Wexler D, Kim J H, Dou S X 2008 Physica C 468 218
[30] Lee S, Chen K, Baek S H, Dai W Q, Moeckly B H, Li Q, Xi X X, Rzchowski M S, Eom C B 2009 IEEE Trans. Appl. Supercond. 19 2811
[31] Yamamoto H, Tsukamoto A, Hasegawa H, Saitoh K, Okada M, Kitaguchi H 2005 Physica C 426—431 1444
[32] Zhu H M, Zhang Y B, Sun X L, Xiong W J, Zhou S P 2007 Physica C 452 11
[33] Gubin A I, Il’in K S, Vitusevich S A, Siegel M, Klein N 2005 Phys. Rev. B 72 064503
[34] Suh J D, Sung G Y 1995 Physica C 252 54
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