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为了满足红外激光测试技术对多光谱集成光源在光谱范围和峰值精度等方面的要求，提出了一种高精度的多波长红外激光二极管，并设计了能够集成860 nm，905 nm和1064 nm（脉冲/单模）四种激光芯片的封装结构. 建立了基于上述封装结构下中心热沉的温度场分布模型，并根据数学建模工具求解的中心热沉温度场数值分布规范了中心热沉的加工工艺. 为了验证多波长激光二极管中心热沉对输出峰值光谱热漂移现象的抑制效果，制备了多波长激光二极管样机，并搭建了观察其峰值光谱热漂移现象的实验装置. 实验结果显示，样机仅有两种芯片的峰值光谱发生了13 nm的微弱漂移，并未超出规定的峰值半宽. 该现象证明了多波长激光二极管的输出光谱具备较高的精度和良好的稳定性.To meet the requirements, requested in infrared-laser testing techniques, in spectral range and peaks precision of multi-spectral source, we present a method for preparing multi-wavelength infrared laser diode with a high precision, and design a packaging structure which can integrate four kinds of laser chips with wavelengths 860 nm, 905 nm and 1064 nm (pulse/single). The 3D heat conduction differential equations of central-substrate are given based on the above packaging structure. According to the solutions of numerical temperature field distribution, which are solved through a mathematic-modeling tool, the processing technique of central-substrate is optimized. And the prototype of multi-wavelength laser diode is prepared, and the experimental apparatus is built which can be used to observe the phenomenon of spectral peak thermal-drifting. Experimental results show that only two spectral peaks are drifting slightly 13 nm. The drifting amount is within the half width range of their spectral peak. This phenomenon proves that the output spectra of multi-wavelength laser diode have a high precision and a well thermal stability.
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Keywords:
- multi-wavelength /
- spectral peaks /
- thermal drifting /
- temperature field
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[41] Xiang T, Song J R, Luan Z Y, Zhang X X 2012 Physical Experiment of College 25 41 (in Chinese) [项婷, 宋俊如, 栾中岳, 张欣欣2012大学物理实验25 41]
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[1] Hecht J 2003 Optics and Photonics News. 1 42
[2] [3] [4] Wang X J, Wang Y G, Cao X P 2004 Military Metrology (Beijing: Defense Industry Press) (in Chinese) [王煊军, 汪元贵, 曹小平2003军事计量学(北京: 国防工业出版社)]
[5] Huai G M, Guo Q F 2003 Defense Metrology (Beijing: Defense Industry Press) (in Chinese) [怀国模, 郭群芳2003国防计量(北京: 国防工业出版社)]
[6] [7] Yang H R 2005 Applied Optics 26 1 (in Chinese) [杨鸿儒 2005 应用光学 26 1]
[8] [9] [10] Masaki Tatsumi US Patent US 20050069006 A1 [2005-03-31]
[11] [12] Liu H, Xu D G, Yao J Q 2009 Chin. Phys. B 18 1077
[13] Wu D H, He Z H, Niu Z C 2006 Chin. Phys. Lett. 23 1005
[14] [15] [16] Wang W, Wang L F, Xie H Y 2006 Chin. Phys. Lett. 23 126
[17] [18] Qioptiq, Inc. Co
[19] [20] Li P L, Wang Y S, Zhao S L, Zhang F J, Xu Z 2012 Chin. Phys. B 21 127804
[21] Zhu J F, Xu L, Lin Q F, Zhong X, Han H N, Wei Z Y 2013 Chin. Phys. B 22 054210
[22] [23] [24] ROHM semiconductor Co
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[33] [34] Li H G 2000 Ph. D. Dissertation (Xian: Xidian University) (in Chinese) [李汉国2000博士学位论文(西安: 西安电子科技大学)]
[35] [36] Hou L Z, Qiang X F, Sun X M 1999 Applied Laser August 178 (in Chinese) [侯立周, 强锡富, 孙晓明2005应用激光August 178]
[37] [38] Liu Y Y 2008 Ms. D. Dissertation (Changchun: Changchun University of Since and Technology) (in Chinese) [刘谊元2008硕士学位论文(长春: 长春理工大学)]
[39] [40] Luo Z D, Huang Y D 2003 Spectroscopic Physics of Solid Laser Material (Fujian: Fujian Press of Science and Technology) p97-102 (in Chinese) [罗遵度, 黄艺东2003固体激光材料光谱物理学(福建: 福建科技出版社)第97–102页]
[41] Xiang T, Song J R, Luan Z Y, Zhang X X 2012 Physical Experiment of College 25 41 (in Chinese) [项婷, 宋俊如, 栾中岳, 张欣欣2012大学物理实验25 41]
[42] [43] Su M K, Ni G Q, Zuo F 2007 Opto-Electronic Engineering 34 48 (in Chinese) [苏美开, 倪国强, 左眆2007光电工程34 48]
[44] [45] Du B X 2001 Semiconductor Laser Theory (Beijing: The Publish of Enginery Industry) p264-269 (in Chinese) [杜宝勋2001半导体激光器原理(北京: 兵器工业出版社)第264–269页]
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