无氨法制备GaN纳米线及其光电性能研究

赵军伟; 张跃飞; 宋雪梅; 严辉; 王如志

doi:10.7498/aps.63.117702

摘要

采用等离子体增强化学气相沉积（PECVD）方法，在无氨与1050 ℃的条件下通过气液固（V-L-S）机理成功制备出六方纤锌矿结构单晶GaN纳米线其拉曼测试结果表明，所制备的纳米线存在较大的表面无序度并表现出明显的小尺寸效应样品光致发光表明其具有典型的纳米线光谱特征，另外，无氨法制备的纳米线也具有较好的场发射特性.

关键词:

Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.

Keywords:

作者及机构信息

1.
北京工业大学材料科学与工程学院, 薄膜材料与技术实验室, 北京 100124;

2.
北京工业大学固体微结构与性能研究所, 北京 100124

基金项目: 国家自然科学基金（批准号：11274029，11074017）、北京市青年拔尖人才培育计划（批准号：CIT&TCD201204037）、北京工业大学京华人才支持计划（批准号：2014-JH-L07）、北京市科技新星计划（批准号：2080B10）和北京市属市管高等学校创新团队建设推进计划（批准号：IDHT20140506）资助的课题.

Authors and contacts

1.
Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

2.
Institute of Solid State Microstructures and Properties, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274029, 11074017), the Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions, China (Grant No. CIT&TCD201204037), the Jing-Hua Talents Project of Beijing University of Technology, China (Grant No. 2014-JH-L07), the Beijing Nova program (Grant No. 2080B10), and the Foundation on the Creative Research Team Construction Promotion Project of Beijing Municipal Institution, China (Grant No. IDHT20140506).

参考文献

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施引文献

[1]	David Tsivion, Mark Schvartzman, Ronit Popovitz-Biro, Palle von Huth, Ernesto Joselevich 2011 Science 333 1003
[2]	Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308
[3]	Avit G, Lekhal K, Andre Y, Bougerol C, Reveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A 2014 Nano Lett. 14 559
[4]	Chen C C, Li Y W, Ru Z S, Xue M W, Bo Y H 2013 Acta Phys. Sin. 62 77701 (in Chinese)[陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉 2013 62 77701]
[5]	Zhang M L, Yang R X, Li Z X, Cao X Z, Wang B Y, Wang X Hui 2013 Acta Phys.Sin. 62 117103 (in Chinese)[张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖 2013 62 117103]
[6]	Han W Q, Fan S S, Li Q Q, Hu Y D 1997 Science 277 1287
[7]	Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Qiao J L, Du X Q 2011 Acta Phys. Sin. 60 057902 (in Chinese)[王晓晖, 常本康, 钱芸生, 高频, 张益军 2011 60 057902]
[8]	Shi W S, Zhang Y F, Wang N, Lee C S, Lee S T 2001 Chem. Phys. Lett. 345 377
[9]	Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263
[10]	Maoqi He, Indira Minus, Piezhen Zhou, Mohammed S N, Halpern J B 2000 Appl. Phys. Lett. 77 3731
[11]	Tevye Kuykendall, Peter Pauzauskie, Sangkwon Lee, Zhang Y F, Joshua Goldberger, Yan P D 2003 Nano Lett. 3 1063
[12]	Liu B D, Bando Y, Tang C C, Xu F F, Hu J Q, Golberg D 2005 J. Phys. Chem. B 109 17082
[13]	Wang Ying, Xue C S, Zhuang H Z, Wang Z P, Zhang D D, Huang Y L, Liu W J 2009 Applied Surface Science 255 7719
[14]	Dinh D V, Kang S M, Yang J H, Kim S W, Yoon D H 2009 J. Cryst. Growth 311 495
[15]	Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308
[16]	Yang Y, Ling Y C, Wang G M, Lu X H, Tong Y X, Yat Li 2013 Nano scale 5 1820
[17]	Wang Y Q, Wang R Z, Li Y J, Zhang Y F, Zhu M K, Wang B B, Hui Yan 2013 Cryst. Eng. Comm. 15 1626
[18]	Chen C C, Yeh C C, Chen C H, Yu M Y, Liu H L, Wu J J, Chen K H, Chen L C, Peng J Y, Chen Y F 2001 J. Am. Chem. Soc. 123 2791
[19]	Jason L Johnson, Yongho Choi, Ant Ural 2008 J. Vac. Sci. Technol. B 26 1841
[20]	Wang B B, Dong G B, Xu X Z 2011 Applied Surface Science 258 1677
[21]	Voslker Schmidt, Ulrich Gösele 2007 Science 316 698
[22]	Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89
[23]	Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263
[24]	Hannon J B, Kodambaka S, Ross F M, Tromp R M 2006 Nature 440 69
[25]	Li J Y, Chen X L, Cao Y G, Qiao Z Y, Lan Y C 2000 Applied Physics A Materials Science m& Processing 71 345
[26]	Liu H L, Chen C C, Chia C T, Yeh C C, Chen C H, Yu M Y, Keller S, Denbaars S P 2001 Chemical Physics Letters 345 245
[27]	Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395
[28]	Campbell I H, Fauchet P M 1986 Solid State Communications 58 739
[29]	Chang K W, Wu J J 2002 J. Phys. Chem. B 106 7796
[30]	Ghulam Nabi, Chuanbao Cao, Sajad Hussain, Waheed S Khan, Sagar R R, Zulfiqar Ali, Butt F K, Zahid Usman, Dapeng Yu 2012 Cryst. Eng. Comm. 14 8492
[31]	Lyu S C, Cha O H, Suh E K, Ruh H, Lee H J, Lee C J 2003 Chemical Physics Letters 367 136
[32]	Chin A H, Ahn T S, Li H W, Vaddiraju S, Bardeen C J, Ning C Z, Sunkara M K 2007 Nano Letters 7 626
[33]	Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707
[34]	Gan H Y, Liu H B, Li Y J, Zhao Q, Li Y L, Wang S, Jiu T G, Wang N, He X R, Yu D P, Zhu D B 2005 J. Am. Chem. Soc. 127 12452
[35]	Dang C, Wang B B, Wang F Y 2009 Vacuum 83 1414

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