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设计并制作了结构尺寸为毫米量级的AlGaN/GaN 高电子迁移率晶体管（HEMT）生物传感器，采用数值分析的方法分析了器件传感区域长度与宽度比值及待测物调控二维电子气（2DEG）距离与感测信号之间的关系，给出了结构尺寸为毫米量级的AlGaN/GaN HEMT生物传感器的设计依据，以不同浓度的前列腺特异性抗原（PSA）为待测物，对制作的AlGaN/GaN HEMT生物传感器进行了初步测量，测试结果表明，在50 mV的电压下，毫米量级的AlGaN/GaN HEMT生物传感器的对PSA的探测极限低于0.1 pg/ml.实验表明毫米量级的AlGaN/GaN HEMT生物传感器具有灵敏度高，易于集成等优点，具备良好的应用前景.In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated. Factors influencing the capability of the AlGaN/GaN HEMT biosensor are analyzed. UV/ozone is used to oxidize GaN surface and then 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer can be bound to the sensing region. This serves as a binding layer in the attachment of prostate specific antibody (anti-PSA) for prostate specific antigen detection. The millimeter grade biomolecule-gated GaN/AlGaN HEMT sensor shows a quick response when the target prostate specific antigen in a buffer solution is added to the antibody-immobilized sensing area. The detection capability of this biomolecule-gate sensor estimated to be below 0.1 pg/ml level using a 21.5 mm2 sensing area, which is the best result of GaN/AlGaN HEMT biosensor for PSA detection till now. The electrical result of the biomolecule-gated GaN/AlGaN HEMT biosensor suggests that this biosensor might be a useful tool for the prostate cancer screening.
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Keywords:
- two-dimensional electron gas /
- high electron mobility transistor /
- biosensor /
- prostate specific antigen
[1] Xue W 2012 MS. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences) (in Chinese) [薛伟2012 硕士学位论文(北京: 中国科学院研究生院)]
[2] Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409 (in Chinese)[张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃2009 58 3409]
[3] Lin T H 2006 MS. Dissertation (Tainan: National Cheng Kung University) (in Chinese) [林宗翰2006 硕士学位论文(台南: 国立成功大学)]
[4] Sun J D, Qin H, Lewis R A, Sun Y F, Zhang X Y, Cai Y, Wu D M, Zhang B S 2012 Appl. Phys. Lett. 100 173513
[5] Sun Y F, Sun J D, Zhang X Y, Qin H, Zhang B S, Wu D M 2012 Chin. Phys. B 21 108504
[6] Hu W D, Wang L, Chen X S, Guo N, Miao J S, Yu A Q, Lu W 2013 Opt. Quant Electron 45 713
[7] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Transactions on Electron Devices 59 1393
[8] Xu Z, Wang J Y, Cai Y, Liu J Q, Yang Z, Li X P, Wang M J, Yu M, Xin B, Wu W G, Ma X H, Zhang J C, Hao Y 2014 IEEE Electron Device Letters 35 33
[9] Kang B S, Wang H T, Lele T P, Tseng Y, Ren F, Pearton S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J 2007 Appl. Phys. Lett. 91 112106
[10] Chen K H, Wang H W, Kang B S, Chang C Y, Wang Y L, Lele T P, Ren F, Pearton S J, Dabiran A, Osinsky A, Chow P P 2008 Sensors and Actuators B 134 386
[11] Wang Y L, Chu B H, Chen K H, Chang C Y, Lele T P, Papadi G, Coleman J K, Sheppard B J, Dungen C F, Pearton, S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J, Ren F 2009 Appl. Phys. Lett. 94 243901
[12] Ito T, Forman S M, Cao C, Li F, Eddy C R, Mastro J M A, Holm R T, Henry R L, Hohn K L, Edgar J H 2008 Langmuir 24 6630
[13] Schwarz S U, Linkohr S, Lorenz P, Krischok S, Nakamura T, Cimalla V, Nebel C E, and Ambacher O 2011 Phys. Status Solidi A 208 1626
[14] Thapa R, Alur S, Kim K, Tong F, Sharma Y, Kim M, Ahyi C, Dai J, Hong J W, Bozack M, Williams J, Son A, Dabiran A, Park M 2012 Appl. Phys. Lett. 100 232109
[15] Xue W, Li J D, Xie J, Wu D M. 2012 Micronanoelectronic Technology 7 425 (in Chinese) [薛伟, 李加东, 谢杰, 吴东岷2012 微纳电子技术7 425]
[16] Neamen D A (translated by Zhao Y Q, Yao S Y, Xie X D et al) 2007 Semiconductor Physics and Devices (Vol. 3) (Beijing: Electronics Industry Press) pp110–113 (in Chinese) [尼曼著(赵毅强, 姚素英、解晓东等译), 2007 半导体器件与物理(第三版), (北京: 电子工业出版社) 第 423-424 页]
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[1] Xue W 2012 MS. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences) (in Chinese) [薛伟2012 硕士学位论文(北京: 中国科学院研究生院)]
[2] Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409 (in Chinese)[张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃2009 58 3409]
[3] Lin T H 2006 MS. Dissertation (Tainan: National Cheng Kung University) (in Chinese) [林宗翰2006 硕士学位论文(台南: 国立成功大学)]
[4] Sun J D, Qin H, Lewis R A, Sun Y F, Zhang X Y, Cai Y, Wu D M, Zhang B S 2012 Appl. Phys. Lett. 100 173513
[5] Sun Y F, Sun J D, Zhang X Y, Qin H, Zhang B S, Wu D M 2012 Chin. Phys. B 21 108504
[6] Hu W D, Wang L, Chen X S, Guo N, Miao J S, Yu A Q, Lu W 2013 Opt. Quant Electron 45 713
[7] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Transactions on Electron Devices 59 1393
[8] Xu Z, Wang J Y, Cai Y, Liu J Q, Yang Z, Li X P, Wang M J, Yu M, Xin B, Wu W G, Ma X H, Zhang J C, Hao Y 2014 IEEE Electron Device Letters 35 33
[9] Kang B S, Wang H T, Lele T P, Tseng Y, Ren F, Pearton S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J 2007 Appl. Phys. Lett. 91 112106
[10] Chen K H, Wang H W, Kang B S, Chang C Y, Wang Y L, Lele T P, Ren F, Pearton S J, Dabiran A, Osinsky A, Chow P P 2008 Sensors and Actuators B 134 386
[11] Wang Y L, Chu B H, Chen K H, Chang C Y, Lele T P, Papadi G, Coleman J K, Sheppard B J, Dungen C F, Pearton, S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J, Ren F 2009 Appl. Phys. Lett. 94 243901
[12] Ito T, Forman S M, Cao C, Li F, Eddy C R, Mastro J M A, Holm R T, Henry R L, Hohn K L, Edgar J H 2008 Langmuir 24 6630
[13] Schwarz S U, Linkohr S, Lorenz P, Krischok S, Nakamura T, Cimalla V, Nebel C E, and Ambacher O 2011 Phys. Status Solidi A 208 1626
[14] Thapa R, Alur S, Kim K, Tong F, Sharma Y, Kim M, Ahyi C, Dai J, Hong J W, Bozack M, Williams J, Son A, Dabiran A, Park M 2012 Appl. Phys. Lett. 100 232109
[15] Xue W, Li J D, Xie J, Wu D M. 2012 Micronanoelectronic Technology 7 425 (in Chinese) [薛伟, 李加东, 谢杰, 吴东岷2012 微纳电子技术7 425]
[16] Neamen D A (translated by Zhao Y Q, Yao S Y, Xie X D et al) 2007 Semiconductor Physics and Devices (Vol. 3) (Beijing: Electronics Industry Press) pp110–113 (in Chinese) [尼曼著(赵毅强, 姚素英、解晓东等译), 2007 半导体器件与物理(第三版), (北京: 电子工业出版社) 第 423-424 页]
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