In2O3：Sn中间层改善B掺杂ZnO薄膜的性能及其应用研究

赵慧旭; 陈新亮; 杨旭; 杜建; 白立沙; 陈泽; 赵颖; 张晓丹

doi:10.7498/aps.63.056801

摘要

金属有机化学气相沉积（MOCVD）法生长的掺硼氧化锌（BZO）薄膜，具有天然的类金字塔绒面结构，作为硅基薄膜太阳电池的前电极具有良好的陷光效果. 但直接获得的BZO薄膜表面形貌过于尖锐，影响后续硅基薄膜材料生长质量及太阳电池的光电转换效率. 本文设计了以一层超薄In2O3：Sn（ITO）薄膜（～ 4 nm厚度）作为中间层的多层膜，并通过对顶层BZO薄膜的厚度调制，改善BZO 薄膜的表面特性，薄膜结构为：glass/底层BZO/ITO/顶层BZO. 合适厚度的顶层BZO薄膜有助于获得类似菜花状形貌特征，尖锐的表面趋于柔和，而较厚的顶层BZO薄膜仍然保持类金字塔状结构. 柔和的BZO薄膜表面结构有助于提高后续生长薄膜电池的结晶质量. 将获得的新型三明治结构多层膜应用于p-i-n型氢化微晶硅（c-Si：H）薄膜太阳电池，相比传统的BZO薄膜，电池的量子效率QE在500800 nm 波长范围提高了～ 10%，并且电池的Jsc和Voc均有所提高.

关键词:

Abstract

Boron-doped zinc oxide (BZO) films with a natural pyramid-textured surface grown by metal organic chemical vapor deposition (MOCVD) have large light trapping effect in thin film silicon solar cells when used as front contact electrodes. However, the surface topography of traditional BZO films is so sharp as to damage the quality of the subsequent silicon thin film materials and to reduce the photovoltaic conversion efficiency of the solar cells. In this work, an ultra-thin In2O3:Sn(ITO)film (～ 4 nm) is used as the interlayer in the sandwiched structure of the multilayer films, i.e. glass/bottom BZO layer /ITO interlayer/top BZO layer. The surface properties can be improved through modulating the thickness of the top BZO layer. Appropriate thickness of top BZO layer and ITO interlayer are helpful for obtaining the cauliflower-like surface morphology and thus the sharp structure becomes relatively gentle, but the surface morphology still keeps a pyramid feature when depositing thicker top BZO layer. The relatively gentle surface morphology could promote crystallization quality ofc-Si:H thin film materials and reduce cracks in intrinsic layer and TCO/P-Si interface defects. Finally, this new sandwiched structure of multilayer ZnO films is applied in c-Si:H p-i-n thin film solar cells. Compared with traditional BZO films, the quantum efficiency (QE) of solar cells with a sandwiched structure of ZnO increases by about 10%, and both the open-circuit voltage (Voc) and short-circuit current density (Jsc) may increase and thus improve the solar cell efficiency.

Keywords:

作者及机构信息

1.
南开大学光电子薄膜器件与技术研究所, 南开大学光电子薄膜器件与技术天津市重点实验室与南开大学光电信息技术科学教育部重点实验室, 天津 300071

基金项目: 国家重点基础研究发展计划（批准号：2011CBA00705，2011CBA00706，2011CBA00707）、天津市重大科技支撑计划项目（批准号：11TXSYGX22100）、天津市应用基础及前沿技术研究计划（批准号：13JCZDJC26900）、科技部国际合作项目（批准号：2009DFA62580）、科技部863高技术发展计划（批准号：2013AA050302）和中央高校基本科研业务费专项资金项目（批准号：65010341）资助的课题.

Authors and contacts

1.
Institute of Photo-electronic Thin Film Devices and Technology, Tianjin Key laboratory of Photo-electronic Thin Film Devices and Technology, Key laboratory of Opto-electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071, China

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant Nos. 2011CBA00705, 2011CBA00706 2011CBA00707), the Major Science and Technology Support Project of Tianjin, China City (Grant No. 11TXSYGX22100), the Tianjin Applied Basic Research Project and Cutting-edge Technology Research Plan, China (Grant No. 13JCZDJC26900), the International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580), the National High Technology Research and Development Program of China (Grant No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (Grant No. 65010341).

参考文献

[1]	Meier J, Spitznagel J, Kroll U, Bucher C, Fay S, Moriarty T, Shah A 2004 Thin Solid Films 451-452 518
[2]	Wang L, Zhang X D, Yang X, Wei C C, Zhang D K, Wang G C, Sun J, Zhao Y 2013 Acta Phys. Sin. 62 058801 (in Chinese) [王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2013 62 058801]
[3]	Steinhauser J, Fay S, Oliveira N, Vallat-Sauvain E, Ballif C 2007 Appl. Phys. Lett. 90 142107
[4]	Addonizio M L, Antonaia A 2009 Thin Solid Films 518 1026
[5]	Zhang C, Chen X L, Wang F, Yan C B, Huang Q, Zhao Y, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 23 (in Chinese) [张翅, 陈新亮, 王斐, 闫聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 61 23]
[6]	Kubon M, Boehmer E, Siebke F, Rech B, Beneking C, Wagner H 1996 Sol. Energy Mater. Sol. Cells 41-42 485
[7]	Nuruddin A, Abelson J R 2001 Thin Solid Films 394 49
[8]	Lai K C, Liu C C, Lu C H, Yeh C H, Houng M P 2010 Sol. Energy Mater. Sol. Cells 94 397
[9]	Jerome S 2008 Low pressure chemical vapor deposited zinc oxide for silicon thin film solar cells Ph. D. Dissertation (Neuchatel: Universite of Neuchatel Institut of Microtechnique)
[10]	Stiebig H, Siebke F, Beyer W, Beneking C, Rech B, Wagner H 1997 Sol. Energy Mater. Sol. Cells 48 351
[11]	Ganguly G, Carlson D E, Hegedus S S, Ryan D, Gordon R G, Pang D, Reedy R C 2004 Appl. Phys. Lett. 85 3
[12]	Boccard M, Cuony P, Despeisse M, Domine D, Feltrin A, Wyrsch N, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 195
[13]	Aswin H, Taweewat K, Ihsanul A Y, Shinsuke M, Makoto K 2010 Appl. Phys. Express 3 051102
[14]	Steinhauser J, Boucher J F, Omnes E, Borrello D, Sauvain E V, Monteduro G, Marmelo M, Orhan J B, Wolf B, Bailat J, Benagli S, Meier J, Kroll U 2011 Thin Solid Films 520 1218
[15]	Soderstrom K, Bugnon G, Haug F J, Nicolay S, Ballif C 2012 Sol. Energy Mater. Sol. Cells 101 193
[16]	Boccard M, Battaglia C, Hanni S, SoderstromK, Escarre J, Nicolay S, Meillaud F, Despeisse M, Ballif C 2012 Nano Lett. 12 1344
[17]	Messerschmidt D, Nicolay S, Ding L, Bugnon G, Meillaud F, Eberhardt J, Ballif C 2013 J. Appl. Phys. 113 024908
[18]	Yan C B, Chen X L, Wang F, Sun J, Zhang D K, Wei C C, Zhang X D, Zhao Y, Geng X H 2012 Thin Solid Films 521 249
[19]	Battaglia C, Escarre J, Soderstrom K, Boccard M, Ballif C 2012 Energy Procedia 15 206
[20]	Chen X L, Xue J M, Zhang D K, Sun J, Ren H Z, Zhao Y, Geng X H 2007 Acta Phys. Sin. 56 1563 (in Chinese) [陈新亮, 薛俊明, 张德坤, 孙建, 任慧志, 赵颖, 耿新华 2007 56 1563]
[21]	Saito T, Watanabe Y, Takahashi K, Matsuzawa T, Baosheng Sang, Konagai M 1997 Sol. Energy Mater. Sol. Cells 49 187
[22]	Nicolay S, Fay S, Ballif C 2009 Crystal Growth & Design 9 4957
[23]	Addonizio M L, Diletto C 2008 Sol. Energy Mater. Sol. Cells 92 1488
[24]	Xue Z Q, Wu Q D, Li H 1991 Physics of Thin Films (Beijing: Electronic Industry Press) pp20-42 (in Chinese) [薛增泉, 吴全德, 李浩 1991 薄膜物理(北京: 电子工业出版社) 第20–42页]
[25]	Yoo J, Lee J, Kim S, Yoon K, Park I J, Dhungel S K, Karunagaran B, Mangalaraj D, Yi J 2005 Thin Solid Films 480-481 213
[26]	Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing: National Defense Industry Press) pp98-99 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1994 半导体物理学(北京: 国防工业出版社) 第98–99页]
[27]	Fay S, Steinhauser J, Oliveira N, Sauvain E V, Ballif C 2007 Thin Solid Films 515 8558
[28]	Fay S, Steinhauser J, Nicolay S, Ballif C 2010 Thin Solid Films 518 2961
[29]	Beneking C, Rech B, Wieder S, Kluth O, Wagner H, Frammelsberger W, Geyer R, Lechner P, Rubel H, Schade H 1999 Thin Solid Films 351 241
[30]	Loffler J, Groenen R, Linden J L, S,en M C M, Schropp R E I 2001 Thin Solid Films 392 315
[31]	Bhosle V, Tiwari A, Narayan J 2006 J. Appl. Phys. 100 0331-713
[32]	Meillaud F, Feltrin A, Despeisse M, Haug F J, Domine D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127
[33]	Muller J, Rech B, Springer J, Vanecek M 2004 Solar Energy 77 917
[34]	Krc J, Lipovsek B, Bokalic M, Campa A, Oyama T, Kambe M, Matsui T, Sai H, Kondo M, Topic M 2010 Thin Solid Films 518 3054
[35]	Despeisse M, Battaglia C, Boccard M, Bugnon G, Charriere M, Cuony P, Hanni S, Lofgren L, Meillaud F, Parasc,olo G, Soderstrom T, Ballif C 2011 Phys. Status Solidi 208 1863

施引文献

[1]	Meier J, Spitznagel J, Kroll U, Bucher C, Fay S, Moriarty T, Shah A 2004 Thin Solid Films 451-452 518
[2]	Wang L, Zhang X D, Yang X, Wei C C, Zhang D K, Wang G C, Sun J, Zhao Y 2013 Acta Phys. Sin. 62 058801 (in Chinese) [王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2013 62 058801]
[3]	Steinhauser J, Fay S, Oliveira N, Vallat-Sauvain E, Ballif C 2007 Appl. Phys. Lett. 90 142107
[4]	Addonizio M L, Antonaia A 2009 Thin Solid Films 518 1026
[5]	Zhang C, Chen X L, Wang F, Yan C B, Huang Q, Zhao Y, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 23 (in Chinese) [张翅, 陈新亮, 王斐, 闫聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 61 23]
[6]	Kubon M, Boehmer E, Siebke F, Rech B, Beneking C, Wagner H 1996 Sol. Energy Mater. Sol. Cells 41-42 485
[7]	Nuruddin A, Abelson J R 2001 Thin Solid Films 394 49
[8]	Lai K C, Liu C C, Lu C H, Yeh C H, Houng M P 2010 Sol. Energy Mater. Sol. Cells 94 397
[9]	Jerome S 2008 Low pressure chemical vapor deposited zinc oxide for silicon thin film solar cells Ph. D. Dissertation (Neuchatel: Universite of Neuchatel Institut of Microtechnique)
[10]	Stiebig H, Siebke F, Beyer W, Beneking C, Rech B, Wagner H 1997 Sol. Energy Mater. Sol. Cells 48 351
[11]	Ganguly G, Carlson D E, Hegedus S S, Ryan D, Gordon R G, Pang D, Reedy R C 2004 Appl. Phys. Lett. 85 3
[12]	Boccard M, Cuony P, Despeisse M, Domine D, Feltrin A, Wyrsch N, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 195
[13]	Aswin H, Taweewat K, Ihsanul A Y, Shinsuke M, Makoto K 2010 Appl. Phys. Express 3 051102
[14]	Steinhauser J, Boucher J F, Omnes E, Borrello D, Sauvain E V, Monteduro G, Marmelo M, Orhan J B, Wolf B, Bailat J, Benagli S, Meier J, Kroll U 2011 Thin Solid Films 520 1218
[15]	Soderstrom K, Bugnon G, Haug F J, Nicolay S, Ballif C 2012 Sol. Energy Mater. Sol. Cells 101 193
[16]	Boccard M, Battaglia C, Hanni S, SoderstromK, Escarre J, Nicolay S, Meillaud F, Despeisse M, Ballif C 2012 Nano Lett. 12 1344
[17]	Messerschmidt D, Nicolay S, Ding L, Bugnon G, Meillaud F, Eberhardt J, Ballif C 2013 J. Appl. Phys. 113 024908
[18]	Yan C B, Chen X L, Wang F, Sun J, Zhang D K, Wei C C, Zhang X D, Zhao Y, Geng X H 2012 Thin Solid Films 521 249
[19]	Battaglia C, Escarre J, Soderstrom K, Boccard M, Ballif C 2012 Energy Procedia 15 206
[20]	Chen X L, Xue J M, Zhang D K, Sun J, Ren H Z, Zhao Y, Geng X H 2007 Acta Phys. Sin. 56 1563 (in Chinese) [陈新亮, 薛俊明, 张德坤, 孙建, 任慧志, 赵颖, 耿新华 2007 56 1563]
[21]	Saito T, Watanabe Y, Takahashi K, Matsuzawa T, Baosheng Sang, Konagai M 1997 Sol. Energy Mater. Sol. Cells 49 187
[22]	Nicolay S, Fay S, Ballif C 2009 Crystal Growth & Design 9 4957
[23]	Addonizio M L, Diletto C 2008 Sol. Energy Mater. Sol. Cells 92 1488
[24]	Xue Z Q, Wu Q D, Li H 1991 Physics of Thin Films (Beijing: Electronic Industry Press) pp20-42 (in Chinese) [薛增泉, 吴全德, 李浩 1991 薄膜物理(北京: 电子工业出版社) 第20–42页]
[25]	Yoo J, Lee J, Kim S, Yoon K, Park I J, Dhungel S K, Karunagaran B, Mangalaraj D, Yi J 2005 Thin Solid Films 480-481 213
[26]	Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing: National Defense Industry Press) pp98-99 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1994 半导体物理学(北京: 国防工业出版社) 第98–99页]
[27]	Fay S, Steinhauser J, Oliveira N, Sauvain E V, Ballif C 2007 Thin Solid Films 515 8558
[28]	Fay S, Steinhauser J, Nicolay S, Ballif C 2010 Thin Solid Films 518 2961
[29]	Beneking C, Rech B, Wieder S, Kluth O, Wagner H, Frammelsberger W, Geyer R, Lechner P, Rubel H, Schade H 1999 Thin Solid Films 351 241
[30]	Loffler J, Groenen R, Linden J L, S,en M C M, Schropp R E I 2001 Thin Solid Films 392 315
[31]	Bhosle V, Tiwari A, Narayan J 2006 J. Appl. Phys. 100 0331-713
[32]	Meillaud F, Feltrin A, Despeisse M, Haug F J, Domine D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127
[33]	Muller J, Rech B, Springer J, Vanecek M 2004 Solar Energy 77 917
[34]	Krc J, Lipovsek B, Bokalic M, Campa A, Oyama T, Kambe M, Matsui T, Sai H, Kondo M, Topic M 2010 Thin Solid Films 518 3054
[35]	Despeisse M, Battaglia C, Boccard M, Bugnon G, Charriere M, Cuony P, Hanni S, Lofgren L, Meillaud F, Parasc,olo G, Soderstrom T, Ballif C 2011 Phys. Status Solidi 208 1863

[1]	王仕东, 闫雅婷, 王瑞英, 朱志立, 谷锦华. 铯掺杂提升反梯度结构二维(CMA)₂MA₈Pb₉I₂₈钙钛矿薄膜及太阳电池的性能. , 2023, 72(13): 138801. doi: 10.7498/aps.72.20230357
[2]	任程超, 周佳凯, 张博宇, 刘璋, 赵颖, 张晓丹, 侯国付. 基于隧穿氧化物钝化接触的高效晶体硅太阳电池的研究现状与展望. , 2021, 70(17): 178401. doi: 10.7498/aps.70.20210316
[3]	曹宇, 蒋家豪, 刘超颖, 凌同, 孟丹, 周静, 刘欢, 王俊尧. 高效硫硒化锑薄膜太阳电池中的渐变能隙结构. , 2021, 70(12): 128802. doi: 10.7498/aps.70.20202016
[4]	陈新亮, 陈莉, 周忠信, 赵颖, 张晓丹. Cu2O/ZnO氧化物异质结太阳电池的研究进展. , 2018, 67(11): 118401. doi: 10.7498/aps.67.20172037
[5]	耿超, 郑义, 张永哲, 严辉. 硅薄膜太阳电池表面纳米线阵列光学设计. , 2016, 65(7): 070201. doi: 10.7498/aps.65.070201
[6]	丁东, 杨仕娥, 陈永生, 郜小勇, 谷锦华, 卢景霄. Al纳米颗粒增强微晶硅薄膜太阳电池光吸收的模拟研究. , 2015, 64(24): 248801. doi: 10.7498/aps.64.248801
[7]	刘长文, 周讯, 岳文瑾, 王命泰, 邱泽亮, 孟维利, 陈俊伟, 齐娟娟, 董超. 金属氧化物基杂化型聚合物太阳电池研究. , 2015, 64(3): 038804. doi: 10.7498/aps.64.038804
[8]	韩安军, 孙云, 李志国, 李博研, 何静靖, 张毅, 刘玮. 低温超薄高效Cu(In, Ga)Se2太阳电池的实现. , 2013, 62(4): 048401. doi: 10.7498/aps.62.048401
[9]	郑雪, 余学功, 杨德仁. -Si：H/SiNx叠层薄膜对晶体硅太阳电池的钝化. , 2013, 62(19): 198801. doi: 10.7498/aps.62.198801
[10]	曹月华, 狄国庆. 磁控溅射制备Y2O3-TiO2薄膜形貌的研究. , 2011, 60(3): 037702. doi: 10.7498/aps.60.037702
[11]	狄国庆. 溅射制备Ta2O5薄膜的表面形貌与光学特性. , 2011, 60(3): 038101. doi: 10.7498/aps.60.038101
[12]	张坤, 刘芳洋, 赖延清, 李轶, 颜畅, 张治安, 李劼, 刘业翔. 太阳电池用Cu2ZnSnS4薄膜的反应溅射原位生长及表征. , 2011, 60(2): 028802. doi: 10.7498/aps.60.028802
[13]	周春兰, 励旭东, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁. 氧化随机织构硅表面对单晶硅太阳电池性能的影响研究. , 2011, 60(3): 038201. doi: 10.7498/aps.60.038201
[14]	寇东星, 刘伟庆, 胡林华, 黄阳, 戴松元, 姜年权. 电极表面改性对染料敏化太阳电池性能影响的机理研究. , 2010, 59(8): 5857-5862. doi: 10.7498/aps.59.5857
[15]	蔡宏琨, 陶科, 王林申, 赵敬芳, 隋妍萍, 张德贤. 柔性衬底非晶硅薄膜太阳电池界面处理的研究. , 2009, 58(11): 7921-7925. doi: 10.7498/aps.58.7921
[16]	梁林云, 戴松元, 方霞琴, 胡林华. 染料敏化太阳电池中TiO2膜内电子传输和背反应特性研究. , 2008, 57(3): 1956-1962. doi: 10.7498/aps.57.1956
[17]	黄建国, 韩建伟, 李宏伟, 蔡明辉, 李小银. 空间微小碎片对低轨道航天器太阳电池表面撞击损伤研究. , 2008, 57(12): 7950-7954. doi: 10.7498/aps.57.7950
[18]	戴松元, 孔凡太, 胡林华, 史成武, 方霞琴, 潘旭, 王孔嘉. 染料敏化纳米薄膜太阳电池实验研究. , 2005, 54(4): 1919-1926. doi: 10.7498/aps.54.1919
[19]	徐炜炜, 戴松元, 方霞琴, 胡林华, 孔凡太, 潘旭, 王孔嘉. 电沉积处理与染料敏化纳米薄膜太阳电池的优化. , 2005, 54(12): 5943-5948. doi: 10.7498/aps.54.5943
[20]	曾隆月, 戴松元, 王孔嘉, 史成武, 孔凡太, 胡林华, 潘旭. 染料敏化纳米ZnO薄膜太阳电池机理初探. , 2005, 54(1): 53-57. doi: 10.7498/aps.54.53

计量

文章访问数: 6502
PDF下载量: 1233
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板