不同退火温度下氧化锌薄膜可见发光与n型导电研究

聂朦; 赵艳; 曾勇; 蒋毅坚

doi:10.7498/aps.62.176801

摘要

采用脉冲激光沉积法在蓝宝石衬底上制备出可见光发光良好的氧化锌薄膜, 在不同的温度下进行了后退火处理. 随着退火温度的升高, 薄膜的可见光发光发生了显著改变, 载流子浓度、迁移率、电阻率也呈现出一定的变化规律. 结合 X射线衍射、扫描电子显微镜、光致发光谱及霍尔测量, 探讨了本征氧化锌薄膜可见光发光的发射机理, 并分析了其 n型导电的原因.

关键词:

ZnO thin films with good visible emissions were deposited on Al2O3 substrates by pulsed laser deposition and subsequently annealed at different temperatures in oxygen ambient. The visible emission property of the films varied significantly with different annealing temperatures. The resistivity, carrier concentration and mobility of the films showed certain rules. From the results of X-ray diffraction, scanning electron microscope, photoluminescence and Hall measurements, the mechanism of visible emission and the reason of showing n-type conductivity in native ZnO thin films were analyzed in this paper.

Keywords:

作者及机构信息

1.
北京工业大学激光工程研究院, 北京 100124

基金项目: 国家自然科学基金(批准号: 51005005)和北京市教委项目(批准号: KM201210005021)资助的课题.

Authors and contacts

1.
Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51005005), and the Beijing Municipal Commission of Education, China (Grant No. KM201210005021).

参考文献

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[2]	Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 60 113]
[3]	Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790
[4]	Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907
[5]	Natsume Y, Sakata H 2000 Thin Solid Films 372 3036
[6]	Tsoutsouva M G, Panagopoulos C N, Papadimitriou D, Fasaki I, Kompitsas M 2011 Mater. Sci. Eng. B-Adv. Funct. Solid-state Mater. 176 480483
[7]	Bentes L, Ayouchi R, Santos C, Schwarz R, Sanguino P, Conde O, Peres M, Monteiro T, Teodoro O 2007 Superlattice. Microst. 42 152157
[8]	Ttipathi S, Choudhary R J, Tripathi A, Baranwal V, Pandey A C, Gerlach J W, Dar C, Kanjilal D 2008 Nucl. Instrum. Meth. B 266 15331536
[9]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 0711017
[10]	Kuo F L, Lin M T, Mensah B A, Scharf T W, Shepherd N D 2010 Phys. Status Solidi A-Appl. Mater. Sci. 207 24872491
[11]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 0535165
[12]	Sardari S E, Iliadis A A, Stamataki M, Tsamakis D, Konofaos N 2010 Solid-state Electron. 54 11501154
[13]	Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B, Nordlund K 2005 Phys. Rev. Lett. 95 22550222
[14]	Zhu B L, Zhao X Z, Su F H, Li G H, Wu X G, Wu J, Wu R 2010 Vacuum 84 12801286
[15]	Fernandez-Hevia D, de Frutos J, Caballero A C, Fernandez J F 2003 Appl. Phys. Lett. 83 26922694
[16]	Ye J D, Gu S L, Qin F, Zhu S M, Liu S M, Zhou X, Liu W, Hu L Q, Zhang R, Shi Y, Zheng Y D 2005 Appl. Phys. A: Mater. Sci. Process. 81 759762
[17]	Liu J, Zhao Y, Jiang Y J, Liu Y L 2010 Chin. Phys. B 19 0878018
[18]	Wang J, Du G T, Zhang Y T, Zhao B J, Yang X T, Liu D L 2004 J. Cryst. Growth 263 269272
[19]	Heo Y W, Norton D P, Pearton S J 2005 J. Appl. Phys. 98 0735027
[20]	Clatot J, Campet G, Zeinert A, Labrugere C, Rougier A 2011 Appl. Surf. Sci. 257 51815184
[21]	Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phy. D-Appl. Phys. 45 19510419
[22]	Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 12650112
[23]	Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 16520216
[24]	Janotti A, Van de Walle C G 2005 Appl. Phys. Lett. 87 12210212

施引文献

[1]	Choi Y S, Kang J W, Hwang D K, Park S J 2010 IEEE T. Electron. 57 2641
[2]	Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 60 113]
[3]	Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790
[4]	Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907
[5]	Natsume Y, Sakata H 2000 Thin Solid Films 372 3036
[6]	Tsoutsouva M G, Panagopoulos C N, Papadimitriou D, Fasaki I, Kompitsas M 2011 Mater. Sci. Eng. B-Adv. Funct. Solid-state Mater. 176 480483
[7]	Bentes L, Ayouchi R, Santos C, Schwarz R, Sanguino P, Conde O, Peres M, Monteiro T, Teodoro O 2007 Superlattice. Microst. 42 152157
[8]	Ttipathi S, Choudhary R J, Tripathi A, Baranwal V, Pandey A C, Gerlach J W, Dar C, Kanjilal D 2008 Nucl. Instrum. Meth. B 266 15331536
[9]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 0711017
[10]	Kuo F L, Lin M T, Mensah B A, Scharf T W, Shepherd N D 2010 Phys. Status Solidi A-Appl. Mater. Sci. 207 24872491
[11]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 0535165
[12]	Sardari S E, Iliadis A A, Stamataki M, Tsamakis D, Konofaos N 2010 Solid-state Electron. 54 11501154
[13]	Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B, Nordlund K 2005 Phys. Rev. Lett. 95 22550222
[14]	Zhu B L, Zhao X Z, Su F H, Li G H, Wu X G, Wu J, Wu R 2010 Vacuum 84 12801286
[15]	Fernandez-Hevia D, de Frutos J, Caballero A C, Fernandez J F 2003 Appl. Phys. Lett. 83 26922694
[16]	Ye J D, Gu S L, Qin F, Zhu S M, Liu S M, Zhou X, Liu W, Hu L Q, Zhang R, Shi Y, Zheng Y D 2005 Appl. Phys. A: Mater. Sci. Process. 81 759762
[17]	Liu J, Zhao Y, Jiang Y J, Liu Y L 2010 Chin. Phys. B 19 0878018
[18]	Wang J, Du G T, Zhang Y T, Zhao B J, Yang X T, Liu D L 2004 J. Cryst. Growth 263 269272
[19]	Heo Y W, Norton D P, Pearton S J 2005 J. Appl. Phys. 98 0735027
[20]	Clatot J, Campet G, Zeinert A, Labrugere C, Rougier A 2011 Appl. Surf. Sci. 257 51815184
[21]	Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phy. D-Appl. Phys. 45 19510419
[22]	Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 12650112
[23]	Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 16520216
[24]	Janotti A, Van de Walle C G 2005 Appl. Phys. Lett. 87 12210212

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