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为了进一步提高深亚微米SOI (Silicon-On-Insulator) MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) 的电流驱动能力, 抑制短沟道效应和漏致势垒降低效应, 提出了非对称Halo异质栅应变Si SOI MOSFET. 在沟道源端一侧引入高掺杂Halo结构, 栅极由不同功函数的两种材料组成. 考虑新器件结构特点和应变的影响, 修正了平带电压和内建电势. 为新结构器件建立了全耗尽条件下的表面势和阈值电压二维解析模型. 模型详细分析了应变对表面势、表面场强、阈值电压的影响, 考虑了金属栅长度及功函数差变化的影响. 研究结果表明,提出的新器件结构能进一步提高电流驱动能力, 抑制短沟道效应和抑制漏致势垒降低效应, 为新器件物理参数设计提供了重要参考.In order to improve the driving current and suppress the SCE and DIBL effect of deep submicron SOI MOSFET, dual material gate strained Si SOI MOSFET structure with asymmetric Halo has been proposed. An impurity with a higher concentration is injected into the channel end near the source and the two materials with different work functions are put together to form the gate. By considering both the characteristics of the new device structure and the influence of strain, the flatband voltage and built-in potential have been corrected. A two-dimensional analytical model for the surface potential and the threshold voltage is proposed by solving Poisson’s equation. The effect of Ge fractions in the relaxed layer on surface potential, surface electric field, and threshold voltage is investigated. The model proposed in this paper takes into account the effects of gate metals length and their work functions. Results show that the novel device can increase carrier transport speed and suppress the SCE and DIBL effects, which provides a valuable reference to the physical parameter design.
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Keywords:
- asymmetric Halo /
- dual material gate /
- strained Si /
- short channel effect
[1] Rupendra K S, Ritesh G, Mridula G, Gupta R S 2009 IEEE Trans on Electron Devices 56 1284
[2] Reddy G V, Kumar M J 2005 IEEE Trans on Nanotechnology 4 260
[3] Zhou X 2000 IEEE Trans Electron Devices 47 113
[4] Li Z C 2008 Chin. Phys. B 17 4312
[5] Djeffal F, Meguellati M, Benhaya A 2009 Physica E 41 1872
[6] Reddy G V, Kumar M J 2004 Microelectronics Journal 35 761
[7] Wang X Y, Zhang H M, Song J J, Ma J L, Wang G Y, An J H 2011 Acta Phys. Sin. 60 077205 (in Chinese) [王晓艳, 张鹤鸣, 宋建军, 马建立, 王冠宇, 安久华 2011 60 077205]
[8] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣, 崔晓英, 胡辉勇, 戴显英, 宣荣喜 2007 56 3504]
[9] Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李劲, 刘红侠, 李斌, 曹磊, 袁博 2010 59 8131]
[10] Venkataraman V, Nawal S, Kummer M J 2007 IEEE Trans. on Electron Devices 54 554
[11] Kummer M J, Venkataraman V, Nawal S 2006 IEEE Trans. on Electron Devices 53 364
[12] Young K K 1989 IEEE Trans on Electron Devices 36 399
[13] Luan S Z, Liu H X, Jia R X, Cai N Q 2008 Acta Phys. Sin. 57 3807 (in Chinese) [栾苏珍、刘红侠, 贾仁需, 蔡乃琼 2008 57 3807]
[14] Reddy G V, Kumar M J 2005 IEEE Trans Nanotechnology 4 260
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[1] Rupendra K S, Ritesh G, Mridula G, Gupta R S 2009 IEEE Trans on Electron Devices 56 1284
[2] Reddy G V, Kumar M J 2005 IEEE Trans on Nanotechnology 4 260
[3] Zhou X 2000 IEEE Trans Electron Devices 47 113
[4] Li Z C 2008 Chin. Phys. B 17 4312
[5] Djeffal F, Meguellati M, Benhaya A 2009 Physica E 41 1872
[6] Reddy G V, Kumar M J 2004 Microelectronics Journal 35 761
[7] Wang X Y, Zhang H M, Song J J, Ma J L, Wang G Y, An J H 2011 Acta Phys. Sin. 60 077205 (in Chinese) [王晓艳, 张鹤鸣, 宋建军, 马建立, 王冠宇, 安久华 2011 60 077205]
[8] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣, 崔晓英, 胡辉勇, 戴显英, 宣荣喜 2007 56 3504]
[9] Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李劲, 刘红侠, 李斌, 曹磊, 袁博 2010 59 8131]
[10] Venkataraman V, Nawal S, Kummer M J 2007 IEEE Trans. on Electron Devices 54 554
[11] Kummer M J, Venkataraman V, Nawal S 2006 IEEE Trans. on Electron Devices 53 364
[12] Young K K 1989 IEEE Trans on Electron Devices 36 399
[13] Luan S Z, Liu H X, Jia R X, Cai N Q 2008 Acta Phys. Sin. 57 3807 (in Chinese) [栾苏珍、刘红侠, 贾仁需, 蔡乃琼 2008 57 3807]
[14] Reddy G V, Kumar M J 2005 IEEE Trans Nanotechnology 4 260
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