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利用射频磁控溅射技术在LaNiO3/SiO2/Si(100)基底上制备了厚 度约为250 nm的0.65PMN-0.35PT(PMN-PT)薄膜. 研究高压氧氛围退火方式对PMN-PT薄膜晶体结构、形貌以及电学性能的影响. 经过XRD测试发现,在高压氧气氛围中, 温度为400℃下退火后的PMN-PT薄膜具有纯的钙钛矿相结构, 具有完全的(100)择优取向, 且衍射峰尖锐, 表明经过高压退火后的薄膜结晶极为充分. SEM表面形貌测试结果显示, 经高压退火处理的PMN-PT薄膜表面呈现出棒状或泡状的形貌. 铁电性能测试表明: 氧气氛围压强4 MPa, 退火时间4h的PMN-PT薄膜样品具有较好的铁电性能, 其剩余极化强度Pr达到10.544 C/cm2, 且电滞回线形状较好, 但漏电流较大, 这可能是由于其微结构所导致.同时介电测试发现: PMN-PT薄膜样品具有极好的介电性能, 其在1 kHz下测试的介电常数r达到913, 介电损耗tg 较小, 仅为0.065.
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关键词:
- 射频磁控溅射 /
- 高压退火 /
- 0.65PMN-0.35PT /
- 介电
Thin films of 0.65PMN-0.35PT PMN=Pb (Mg1/3Nb2/3)O3 and PT=PbTiO3 with a thickness about 250 nm were prepared on LaNiO3/SiO2/Si substrates by radio frequency magnetron sputtering. The films were annealed using high pressure annealing (HPA) technique in oxygen atmosphere. Effect of HPA on the crystal structure, morphology and electrical properties of the films was studied. XRD patterns of the films indicated that PMN-PT films treated by HPA in oxygen atmosphere (annealing temperature 400℃) showed a pure perovskite phase, with highly (100) preferred orientation. The strong and sharp diffraction peak showed the better crystallization of PMN-PT thin films after HPA. SEM observations showed that a rod or bubble morphology was present on the films surface. Ferroelectric properties tests showed that the PMN-PT film annealed in oxygen atmosphere at a pressure of 4 MPa, and annealing time of 4 h had good ferroelectric properties, in which the remanent polarization (Pr) could reach 10.544 uC/cm2. The shape of electric hysteresis was better, but the leakage current was too large, which may be due to the microstructure of the films. Meanwhile, the dielectric tests indicated that PMN-PT thin films could show very good dielectric properties, and the dielectric constant (r) could reach 913, and dielectric loss (tg) was very small, only 0.065.-
Keywords:
- high pressure annealing /
- radio frequency magnetron sputtering /
- 0.65PMN-0.35PT /
- dielectric
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[2] Bokov A, AYe Z G 2006 J Mater Sci. 41 31
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[16] Zhang X D, Meng X J, Sun J L, Lin T, Chu J H 2008 J. Cryst Growth 310 783
[17] Ye F, Lu K 1999 Phys. Rev. B 60 7018
[18] Zhang C H, Xu Z, Gao J J, Wang B K 2009 Acta. Phys. Sin. 58 6500 (in Chinese) [张崇辉, 徐卓, 高俊杰, 王斌科 2009 58 6500]
[19] Zhou D, Luo L H, Wang F F, Jia Y M, Zhao X Y, Luo H S 2008 Acta Phys. Sin. 57 4552 (in Chinese) [周丹, 罗来慧, 王飞飞, 贾艳敏, 赵祥永, 罗豪甦 2008 57 4552]
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[1] Ye Z G 1996 Ferroelectrics 184 193
[2] Bokov A, AYe Z G 2006 J Mater Sci. 41 31
[3] Cross L E 1987 Ferroelectrics 76 241
[4] Choi S W, Shrout T R, Jong S J, Bhalla A S 1989 Mater Lett. 8 253
[5] Fang F, Zhang X W, Gui Z L, Li L T 1997 J. Chin. Ceramic Soc. 25 688 (in Chinese) [方菲, 张孝文, 桂治轮, 李龙土 1997 硅酸盐学报 25 688]
[6] Xia F, Yao X 1999 J. Funct Mater 30 582 (in Chinese) [夏峰, 姚熹 1999 功能材料 30 582]
[7] Noblanc O, Gaucher P, Galvarin G 1996 J. Appl. Phys. 79 4291
[8] Gupta S M, Viehland D 1998 J. Appl. Phys. 83 407
[9] Xia F, Wang X L, Zhang L Y, Yao X 1998 J. Chin. Ceramic Soc. 26 114 (in Chinese) [夏峰, 王晓莉, 张良莹, 姚熹 1998 硅酸盐学报 6 114]
[10] Deng J X, Xing X R 2005 Chin. J. Rare Met. 29 76 (in Chinese) [邓金侠, 邢献然 2005 稀有金属 29 76]
[11] Xiao D Q, Wang Y C, P S Q, Yang B, Zhu J G, Zhang W, Wang H T 2009 Acta. Phys. Sin. 47 1754 (in Chinese) [肖定全, 王永川, 张荣龙, 彭商强, 杨斌, 朱建国, 张文, 王洪涛 1998 47 1754]
[12] Park J H, Xu F, Susan T M 2001 J. Appl. Phys. 89 568
[13] Lee S Y, Custodio M C C, Lim H J, Feigelson R S, Maria J P, Trolier-McKinstry S 2001 J. Cryst. Growth 226 247
[14] Guo H L, Liu G, Li X D, Xiao D Q, Zhu J G 2011 J. Funct Mater. 42 1441 (in Chinese) (in Chinese) [郭红力, 刘果, 李雪冬, 肖定全, 朱建国 2011 功能材料 42 1441]
[15] Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim B G 2005 Appl. Phys. Lett. 86 252902
[16] Zhang X D, Meng X J, Sun J L, Lin T, Chu J H 2008 J. Cryst Growth 310 783
[17] Ye F, Lu K 1999 Phys. Rev. B 60 7018
[18] Zhang C H, Xu Z, Gao J J, Wang B K 2009 Acta. Phys. Sin. 58 6500 (in Chinese) [张崇辉, 徐卓, 高俊杰, 王斌科 2009 58 6500]
[19] Zhou D, Luo L H, Wang F F, Jia Y M, Zhao X Y, Luo H S 2008 Acta Phys. Sin. 57 4552 (in Chinese) [周丹, 罗来慧, 王飞飞, 贾艳敏, 赵祥永, 罗豪甦 2008 57 4552]
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