分数维方法研究GaAs薄膜中的极化子

武振华; 李华; 严亮星; 刘炳灿; 田强

doi:10.7498/aps.62.097302

摘要

本文采用分数维方法, 在讨论Al0.3Ga0.7As衬底上GaAs薄膜的分数维基础上, 计算了GaAs薄膜中的极化子结合能和有效质量. 随着薄膜厚度的增加, 极化子结合能和质量变化单调地减小. 当薄膜厚度Lw70 并且衬底厚度Lb200 时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响比较显著, 随着衬底厚度的增加, 薄膜中极化子的结合能和质量变化逐渐变大; 当薄膜厚度Lw70 或者衬底厚度Lb200 时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响不显著. 研究结果为GaAs薄膜电子和光电子器件的研究和应用提供参考.

关键词:

Abstract

Within the framework of the fraction-dimensional space approach, the binding energy and the effective mass of a polaron confined in a GaAs film deposited on Al0.3Ga0.7As substrate have been investigated. It is shown that the polaron binding energy and mass shift decrease monotonously with increasing film thickness. For the film thickness of Lw70 and the substrate thickness of Lb200 , the substrate thickness will influence the polaron binding energy and mass shift. The polaron binding energy and mass shift increase with increasing substrate thickness. In the region Lw70 or Lb200 , the substrate thickness has no influence on the polaron binding energy and mass shift.

Keywords:

作者及机构信息

1.
北京师范大学物理系, 北京 100875;

2.
装甲兵工程学院基础部, 北京 100072

基金项目: 国家自然科学基金(批准号:10574011,10974017)资助的课题.

Authors and contacts

1.
Department of Physics, Beijing Normal University, Beijing 100875, China;

2.
Department of Fundamental Courses, Academy of Armored Force Engineering, Beijing 100072, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10574011, 10974017).

参考文献

[1]	Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[2]	Zhao F Q, Zhou B Q 2007 Acta Phys. Sin. 56 4856 (in Chinese) [赵凤岐, 周炳卿 2007 56 4856]
[3]	Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[4]	He X F 1987 Solid State Commun. 61 53 He X F 1990 Solid State Commun. 75 111
[5]	He X F 1990 Phys. Rev. B 42 11751 He X F 1991 Phys. Rev. B 43 2063
[6]	Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[7]	Lefebvre P, Christol P, Mathieu H 1992 Phys. Rev. B 46 13603
[8]	Christol P, Lefebvre P, Mathieu H 1993 J. Appl. Phys. 74 5626
[9]	de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[10]	Matos-Abiague A, Oliveira L E, de Dios-Leyva M 1998 Phys. Rev. B 58 4072
[11]	Wang Z P, Liang X X 2009 Phys. Lett. A 373 2596
[12]	Zhao Q X, Monemar B, Holtz P O, Willander M, Fimland B O, Johannessen K 1994 Phys. Rev. B 50 4476
[13]	Reyes-Gómez E, Matos-Abiague A, Perdomo-Leiva C A, de Dios-Leyva M, Oliveira L E 2000 Phys. Rev. B 61 13104
[14]	Singh J, Birkedal D, Lyssenko V G, Hvam J M 1996 Phys. Rev. B 53 15909
[15]	Thilagam A 1997 Phys. Rev. B 55 7804
[16]	Wang Z P, Liang X X 2010 Solid State Commun. 150 356
[17]	Matos-Abiague A, Oliveira L E, de Dios-Leyva M 2001 Physica B 296 342
[18]	Reyes-Gómez E, Perdomo-Leiva C A, Oliveira L E, de Dios-Leyva M 2000 Physica E 8 239
[19]	Oliveira L E, Duque C A, Porras-Montenegro N, de Dios-Leyva M 2001 Physica B 302-303 72
[20]	Reyes-Gómez E, Oliveira L E, de Dios-Leyva M 1999 J. Appl. Phys. 85 4045
[21]	Mikhailov I D, Betancur F J, Escorcia R A, Sierra-Ortega J 2003 Phys. Rev. B 67 115317
[22]	Kundrotas J, Črškus A, Ašmontas S, Valušis G 2005 Phys. Rev. B 72 235322
[23]	Kundrotas J, Črškus A, Ašmontas S, Valušis G, Halsall M P, Johannessen E, Harrison P 2007 Semicond. Sci. Technol. 22 1070
[24]	Matos-Abiague A 2002 J. Phys.: Condens. Matter 14 4543
[25]	Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[26]	Matos-Abiague A 2002 Phys. Rev. B 65 165321
[27]	Rodrí}guez Suárez R L, Matos-Abiague A 2003 Physica E 18 485
[28]	Thilagam A Matos-Abiague A 2004 J. Phys.: Condens. Matter 16 3981
[29]	Wang Z P, Liang X X, Wang X 2007 Eur. Phys. J. B 59 41
[30]	Deng Y P, Lv B B, Tian Q 2010 Acta Phys. Sin. 59 4961 (in Chinese) [邓艳平, 吕彬彬, 田强 2010 59 4961]
[31]	Deng Y P Tian Q 2011 Sci. China: Phys. Mech. Astron. 54 1593

施引文献

[1]	Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[2]	Zhao F Q, Zhou B Q 2007 Acta Phys. Sin. 56 4856 (in Chinese) [赵凤岐, 周炳卿 2007 56 4856]
[3]	Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[4]	He X F 1987 Solid State Commun. 61 53 He X F 1990 Solid State Commun. 75 111
[5]	He X F 1990 Phys. Rev. B 42 11751 He X F 1991 Phys. Rev. B 43 2063
[6]	Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[7]	Lefebvre P, Christol P, Mathieu H 1992 Phys. Rev. B 46 13603
[8]	Christol P, Lefebvre P, Mathieu H 1993 J. Appl. Phys. 74 5626
[9]	de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[10]	Matos-Abiague A, Oliveira L E, de Dios-Leyva M 1998 Phys. Rev. B 58 4072
[11]	Wang Z P, Liang X X 2009 Phys. Lett. A 373 2596
[12]	Zhao Q X, Monemar B, Holtz P O, Willander M, Fimland B O, Johannessen K 1994 Phys. Rev. B 50 4476
[13]	Reyes-Gómez E, Matos-Abiague A, Perdomo-Leiva C A, de Dios-Leyva M, Oliveira L E 2000 Phys. Rev. B 61 13104
[14]	Singh J, Birkedal D, Lyssenko V G, Hvam J M 1996 Phys. Rev. B 53 15909
[15]	Thilagam A 1997 Phys. Rev. B 55 7804
[16]	Wang Z P, Liang X X 2010 Solid State Commun. 150 356
[17]	Matos-Abiague A, Oliveira L E, de Dios-Leyva M 2001 Physica B 296 342
[18]	Reyes-Gómez E, Perdomo-Leiva C A, Oliveira L E, de Dios-Leyva M 2000 Physica E 8 239
[19]	Oliveira L E, Duque C A, Porras-Montenegro N, de Dios-Leyva M 2001 Physica B 302-303 72
[20]	Reyes-Gómez E, Oliveira L E, de Dios-Leyva M 1999 J. Appl. Phys. 85 4045
[21]	Mikhailov I D, Betancur F J, Escorcia R A, Sierra-Ortega J 2003 Phys. Rev. B 67 115317
[22]	Kundrotas J, Črškus A, Ašmontas S, Valušis G 2005 Phys. Rev. B 72 235322
[23]	Kundrotas J, Črškus A, Ašmontas S, Valušis G, Halsall M P, Johannessen E, Harrison P 2007 Semicond. Sci. Technol. 22 1070
[24]	Matos-Abiague A 2002 J. Phys.: Condens. Matter 14 4543
[25]	Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[26]	Matos-Abiague A 2002 Phys. Rev. B 65 165321
[27]	Rodrí}guez Suárez R L, Matos-Abiague A 2003 Physica E 18 485
[28]	Thilagam A Matos-Abiague A 2004 J. Phys.: Condens. Matter 16 3981
[29]	Wang Z P, Liang X X, Wang X 2007 Eur. Phys. J. B 59 41
[30]	Deng Y P, Lv B B, Tian Q 2010 Acta Phys. Sin. 59 4961 (in Chinese) [邓艳平, 吕彬彬, 田强 2010 59 4961]
[31]	Deng Y P Tian Q 2011 Sci. China: Phys. Mech. Astron. 54 1593

[1]	刘俊娟, 魏增江, 常虹, 张亚琳, 邸冰. 杂质离子对有机共轭聚合物中极化子动力学性质的影响. , 2016, 65(6): 067202. doi: 10.7498/aps.65.067202
[2]	赵翠兰, 王丽丽, 赵丽丽. 有限深抛物势量子盘中极化子的激发态性质. , 2015, 64(18): 186301. doi: 10.7498/aps.64.186301
[3]	邸冰, 王亚东, 张亚琳. 链间耦合对极化子非弹性散射性质的影响. , 2013, 62(10): 107202. doi: 10.7498/aps.62.107202
[4]	刘炳灿, 李华, 严亮星, 孙慧, 田强. GaAs薄膜的有效量子限制长度及其极化子特性. , 2013, 62(19): 197302. doi: 10.7498/aps.62.197302
[5]	伊丁, 秦伟, 解士杰. 钙钛矿锰氧化物中的极化子研究. , 2012, 61(20): 207101. doi: 10.7498/aps.61.207101
[6]	任学藻, 贺树, 丛红璐, 王旭文. 两格点两电子Hubbard-Holstein模型极化子的量子纠缠特性. , 2012, 61(12): 124207. doi: 10.7498/aps.61.124207
[7]	赵翠兰, 丛银川. 球壳量子点中极化子和量子比特的声子效应. , 2012, 61(18): 186301. doi: 10.7498/aps.61.186301
[8]	王启文, 红兰. 二维量子点中极化子的自旋弛豫. , 2012, 61(1): 017107. doi: 10.7498/aps.61.017107
[9]	宋瑞, 刘晓静, 王亚东, 邸冰, 安忠. 电子-晶格耦合非线性项对极化子性质的影响. , 2010, 59(5): 3461-3465. doi: 10.7498/aps.59.3461
[10]	赵翠兰, 高宽云. 声子和磁场对量子环中极化子性质的影响. , 2010, 59(7): 4857-4862. doi: 10.7498/aps.59.4857
[11]	孙震, 安忠, 李元, 刘文, 刘德胜, 解士杰. 高聚物中极化子和三重态激子的碰撞过程研究. , 2009, 58(6): 4150-4155. doi: 10.7498/aps.58.4150
[12]	任学藻, 黄书文, 廖旭, 汪克林. 有限格点一维Holstein极化子研究. , 2009, 58(4): 2680-2683. doi: 10.7498/aps.58.2680
[13]	任俊峰, 张玉滨, 解士杰. 铁磁/有机半导体/铁磁系统的电流自旋极化性质研究. , 2007, 56(8): 4785-4790. doi: 10.7498/aps.56.4785
[14]	赵凤岐, 周炳卿. 外电场作用下纤锌矿氮化物抛物量子阱中极化子能级. , 2007, 56(8): 4856-4863. doi: 10.7498/aps.56.4856
[15]	张耘. 极化子荧光及其断层扫描对Ti:LiNbO3光波导表征研究. , 2007, 56(1): 280-284. doi: 10.7498/aps.56.280
[16]	任学藻, 廖旭, 刘涛, 汪克林. 电子与双声子相互作用对Holstein极化子的影响. , 2006, 55(6): 2865-2870. doi: 10.7498/aps.55.2865
[17]	熊昌民, 孙继荣, 王登京, 沈保根. 厚度与应变效应对La0.67Ca0.33MnO3薄膜电输运与居里温度的影响. , 2004, 53(11): 3909-3915. doi: 10.7498/aps.53.3909
[18]	沈韩, 许华, 陈敏, 李景德. 钇掺杂钨酸铅晶体中的极化子和导纳谱. , 2003, 52(12): 3125-3129. doi: 10.7498/aps.52.3125
[19]	王鹿霞, 张大成, 刘德胜, 韩圣浩, 解士杰. 基态非简并聚合物中的极化子和双极化子动力学. , 2003, 52(10): 2547-2552. doi: 10.7498/aps.52.2547
[20]	魏建华, 解士杰, 梅良模. 混合卤化物中的极化子与双极化子. , 2000, 49(11): 2264-2270. doi: 10.7498/aps.49.2264

计量

文章访问数: 6511
PDF下载量: 481
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板