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在考虑了电导率调制效应的情况下对深亚微米静电放电(electrostatic discharge, ESD)保护器件的衬底电阻流控电压源模型进行优化, 并根据轻掺杂体衬底和重掺杂外延型衬底的不同物理机制提出了可根据 版图尺寸调整的精简衬底电阻宏模型, 所建模型准确地预估了不同衬底 结构上源极扩散到衬底接触扩散间距变化对触发电压Vt1的影响. 栅接地n型金属氧化物半导体器件的击穿特性结果表明, 所提出的衬底电阻模 型与实验结果符合良好, 且仿真时间仅为器件仿真软件的7%, 为ESD保护器件版 图优化设计提供了方法支持.
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关键词:
- 栅接地n型金属氧化物半导体器件 /
- 静电放电 /
- 衬底电阻模型
The current controlled voltage source model of substrate parasitic resistance of deep sub-micron electrostatic discharge protection device is optimized by considering the effect of conductance modulation. A compact macro-model of substrate resistance is presented according to the characteristics of lightly doped bulk substrate and heavily doped substrate with a lightly doped epitaxial layer, which is scalable with the layout dimension. The experimental model parameters of devices with various spaces between source and substrate diffusion can be extracted by device simulation. The breakdown behavior of gate grounded negative-channel metal oxide semiconductor shows the effectiveness of this method. In the meantime, the simulation time-consuming of the compact model is only 7% that of the device simulation software.-
Keywords:
- gate grounded negative channel metal oxide semiconductor /
- electrostatic discharge /
- substrate resistance model
[1] Liu S H, Tan W 2000 Physics 29 304 (in Chinese) [刘尚合, 谭伟 2000 物理 29 304]
[2] Zhu Z W, Hao Y, Zhang J F, Fang J P, Liu H X 2006 Acta Phys. Sin. 55 5878 (in Chinese) [朱志炜, 郝跃, 张金凤, 方建平, 刘红侠 2006 55 5878]
[3] Amerasekera A, Roozendaal L V, Bruines J, Kuper F 1991 IEEE Trans. Electron Device 38 2161
[4] Ramaswamy S, Amerasekera A, Chang M C A 1997 Proceeding of International Electron Device Meeting Washington, USA, December 10, 1997 p885
[5] Zhang B, Chai C C, Yang Y T 2010 Acta Phys. Sin. 59 8063 (in Chinese) [张冰, 柴常春, 杨银堂 2010 59 8063]
[6] Gao X F, Liou J J, Bernier J, Croft G, Oritiz-Conde A 2002 IEEE Trans. Computer-Aided Design 21 1497
[7] Liu Y D, Du L, Sun P, Chen W H 2012 Acta Phys. Sin. 61 137203 (in Chinese) [刘玉栋, 杜磊, 孙鹏, 陈文豪 2012 61 137203]
[8] Wang Y, Jia S, Sun L, Zhang G G, Zhang X, Ji L J 2007 Acta Phys. Sin. 56 7242 (in Chinese) [王源, 贾嵩, 孙磊, 张钢刚, 张兴, 吉利久 2007 56 7242]
[9] Skotnicki T, Merckel G, Merrachi A 1991 Solid State Device Research Conference Montreux, September 16-19, 1991 p559
[10] Amerasekera A, Ramaswamy S, Chang M C, Duvvury C 1996 Proceeding of Reliability Physics Symposium Dallas, USA, April 30-May 2, 1996 p318
[11] Russ C, Verhaege K, Bock K, Roussel P J 1996 Proceeding of Electrical Overstress/Electrostatic Discharge Symposium Orlando, USA, September 10-12, 1996 p302
[12] Zhou Y Z, Hajjar J J, Lisiak K 2006 International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, October 23-26, 2006 p1202
[13] Zhang X Y, Banerjee K, Amerasekera A, Gupta V, Yu Z, Dutton R W 2000 Proceeding of Reliability Physics Symposium San Jose, USA, April 10-13, 2000 p295
[14] Dutton R W 1975 IEEE Trans. Electron Device 22 334
[15] Shreeve R, Fiez T S, Mayaram K 2004 Proceeding of International Symposium on Circuits and Systems Vancouver, Canada, May 23-26, 2004 p157
[16] Amerasekera A, Gupta V, Vasanth K, Ramaswamy S 1999 Proceeding of International Reliability Physics Symposium San Diego, USA, March 23-25, 1999 p159
[17] Xu C G, Fiez T, Mayaram K 2004 IEEE Trans. Circ. Syst. 51 1223
[18] Veronis G, Lu Y C, Dutton R W 2004 Proc. of Int. Symp. on Quality Electronic Design San Jose, USA, March 22-24, 2004 p303
[19] Lan H, Chen T W, Chui C O, Nikaeen P, Kim J W, Dutton R W 2006 IEEE J. Solid-State Circ. 41 1817
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[1] Liu S H, Tan W 2000 Physics 29 304 (in Chinese) [刘尚合, 谭伟 2000 物理 29 304]
[2] Zhu Z W, Hao Y, Zhang J F, Fang J P, Liu H X 2006 Acta Phys. Sin. 55 5878 (in Chinese) [朱志炜, 郝跃, 张金凤, 方建平, 刘红侠 2006 55 5878]
[3] Amerasekera A, Roozendaal L V, Bruines J, Kuper F 1991 IEEE Trans. Electron Device 38 2161
[4] Ramaswamy S, Amerasekera A, Chang M C A 1997 Proceeding of International Electron Device Meeting Washington, USA, December 10, 1997 p885
[5] Zhang B, Chai C C, Yang Y T 2010 Acta Phys. Sin. 59 8063 (in Chinese) [张冰, 柴常春, 杨银堂 2010 59 8063]
[6] Gao X F, Liou J J, Bernier J, Croft G, Oritiz-Conde A 2002 IEEE Trans. Computer-Aided Design 21 1497
[7] Liu Y D, Du L, Sun P, Chen W H 2012 Acta Phys. Sin. 61 137203 (in Chinese) [刘玉栋, 杜磊, 孙鹏, 陈文豪 2012 61 137203]
[8] Wang Y, Jia S, Sun L, Zhang G G, Zhang X, Ji L J 2007 Acta Phys. Sin. 56 7242 (in Chinese) [王源, 贾嵩, 孙磊, 张钢刚, 张兴, 吉利久 2007 56 7242]
[9] Skotnicki T, Merckel G, Merrachi A 1991 Solid State Device Research Conference Montreux, September 16-19, 1991 p559
[10] Amerasekera A, Ramaswamy S, Chang M C, Duvvury C 1996 Proceeding of Reliability Physics Symposium Dallas, USA, April 30-May 2, 1996 p318
[11] Russ C, Verhaege K, Bock K, Roussel P J 1996 Proceeding of Electrical Overstress/Electrostatic Discharge Symposium Orlando, USA, September 10-12, 1996 p302
[12] Zhou Y Z, Hajjar J J, Lisiak K 2006 International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, October 23-26, 2006 p1202
[13] Zhang X Y, Banerjee K, Amerasekera A, Gupta V, Yu Z, Dutton R W 2000 Proceeding of Reliability Physics Symposium San Jose, USA, April 10-13, 2000 p295
[14] Dutton R W 1975 IEEE Trans. Electron Device 22 334
[15] Shreeve R, Fiez T S, Mayaram K 2004 Proceeding of International Symposium on Circuits and Systems Vancouver, Canada, May 23-26, 2004 p157
[16] Amerasekera A, Gupta V, Vasanth K, Ramaswamy S 1999 Proceeding of International Reliability Physics Symposium San Diego, USA, March 23-25, 1999 p159
[17] Xu C G, Fiez T, Mayaram K 2004 IEEE Trans. Circ. Syst. 51 1223
[18] Veronis G, Lu Y C, Dutton R W 2004 Proc. of Int. Symp. on Quality Electronic Design San Jose, USA, March 22-24, 2004 p303
[19] Lan H, Chen T W, Chui C O, Nikaeen P, Kim J W, Dutton R W 2006 IEEE J. Solid-State Circ. 41 1817
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