铜铟镓硒太阳能电池多层膜的结构分析

潘惠平; 薄连坤; 黄太武; 张毅; 于涛; 姚淑德

doi:10.7498/aps.61.228801

摘要

对于溅射后硒化和共蒸发等方法制备的铜铟镓硒(CIGS)太阳能电池薄膜, 利用多种分析方法研究了CIGS多层膜的复杂结构等.研究表明: 卢瑟福背散射(RBS)在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析(AES)均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS, Mo与CIGS的界面处;X射线荧光(XRF)结果表明,电池效率最高的CIGS层中In, Ga比例为In:Ga=0.7:0.3; X射线衍射(XRD)结果显示: 退火后的CIGS/Mo薄膜结晶品质得到了优化.

关键词:

Abstract

In this paper, the complex structure of CuInGaSe (CIGS), which is fabricated by a two-step progress (the deposition step and the salinization) or co-evaporation method, is analyzed in detail by several methods. Rutherford backscattering spectroscopy (RBS) shows unique advantage for investigating CIGS multi-layer. For the two-step CIGS thin films, both Ga and In atoms reveal a gradient distribution. Such a distribution that Ga atoms are more likely to be localized in a deeper layer of surface than in a shallow layer of surface, has no relation with the Mo layer. RBS and Auger electron spectroscopy (AES) prove that there appears diffusion in the interfaces of multi-layers, especially the interfaces of CdS and CIGS, Mo and CIGS. X-ray fluorescence (XRF) indicates that CIGS thin film presents the highest efficiency when the content ratio of In and Ga atoms is 0.7:0.3. Structural investigation by X-ray diffraction reveals the improved crystalline quality after annealing.

Keywords:

作者及机构信息

1.
北京大学核物理与核技术国家重点实验室,北京 100871;

2.
黔南民族师范学院物理与电子科学系, 都匀 558000;

3.
南开大学光电子薄膜器件与技术研究所, 天津 300071

基金项目: 国家自然科学基金(批准号: 10875004)和国家重点基础研究发展计划 (批准号: 2010CB832904)资助的课题.

Authors and contacts

1.
State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China;

2.
Department of Physics and Electionic Science, Qiannan Normal College for Nationalities, Duyun 558000, China;

3.
Institute of Photoelectronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 10875004), and the National Basic Research Program of China (Grant No. 2010CB832904).

参考文献

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[8]	Wuerz R, Eicke A, Frankenfeld M, Kessler F, Powalla M, Rogin P 2009 Thin Solid Films. 517 2415
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[10]	Scheer R Thin Solid Films. 2011, doi:10.1016/j.tsf.2011.01.092
[11]	Han D L, Zhang G, Zhuang D M, Yuan J S, Song J 2007 Vacuum 44 30 (in Chinese) [韩东麟, 张弓, 庄大明, 元金石, 宋军, 2007 真空科学与技术学报 44 30]
[12]	Marudachalam M, Birkmire R W, Hichri H, Schultz J M, Swartzlander A, Al-Jassim M M 1997 J. Appl. Phys. 82 2896
[13]	Wada T, Kohara N, Nishiwaki S, Negami T 2001 Thin Solid Films 387 118
[14]	Assmann L, Bernéde J C, Drici A, Amory C, Halgand E, Morsli M 2005 Appl. Surf. Sci. 246 159
[15]	Wang H, Yao S D, Pan Y B, Zhang G Y 2007 Acta Phys. Sin. 56 3350 (in Chinese) [王欢, 姚淑德, 潘尧波, 张国义 2007 56 3350]
[16]	Gossla M, Shafarman W N 2005 Thin Solid Films 480-481 33
[17]	Jackson P, Würz R, Rau U, Mattheis J, Kurth M, Schlötzer T, Bilger G, Werner J H 2007 Prog. Photovolt. Res. Appl. 15 507
[18]	Dittrich H, Prinz U, Szot J, Schock H W, 1989 Proceedings of the 9th European Communities Photovoltaic Solar Energy Conference Freiburg, Fed. Rep. of Germany 25-29 September 1989 p163
[19]	Nakada T, Kunioka A 1999 Appl. Phys. Lett. 74 2444
[20]	Liao D X, Rockett A 2003 J. Appl. Phys. 93 9380
[21]	Zheng Q L, Zhuang D M, Zhang G, Li Q F 2006 Chin. J. Vac. Sci. Technol. 26 36 (in Chinese) [郑麒麟, 庄大明, 张弓, 李秋芳 2006 真空科学与技术学报 26 36]

施引文献

[1]	Sun Y, Wang J Q, Du Z F, Shu B J, Yu G, Wen G Z, Zhou Z H, Sun J, Zhang C J, Zhang L Z 2001 Acta Energiae Sol. Sin. 22 192 (in Chinese)
[2]	Xie D T, Zhao K, Wang L F, Zhu F, Quan S W, Meng T J, Zhang B C, Chen J E 2002 Acta Phys. Sin. 51 1377 (in Chinese)
[3]	Repins I, Contreras M A, Egaas B, DeHart C, Scharf J, Perkins C L, To B, Noufi R 2008 Prog. Photovolt: Res. Appl. 16 235
[4]	Hayashi T, Minemoto T, Zoppi G, Forbes I, Tanaka K, Yamada S, Araki T, Takakura H 2009 Sol. Energy Mater. Sol. Cells 93 922
[5]	Shi C Y, Sun Y, He Q, Li F Y, Zhao J C 2009 Sol. Energy Mater. Sol. Cells 93 654
[6]	Ding Z B, Wang Q, Wang K, Wang H, Chen T X, Zhang G Y, Yao S D 2007 Acta Phys. Sin. 56 2873 (in Chinese) [丁志博, 王琦, 王坤, 王欢, 陈田详, 张国义, 姚淑德 2007 56 2873]
[7]	Doolittle L R 1985 Nucl. Instr. and Meth. In Phys. Res. B 9 344
[8]	Wuerz R, Eicke A, Frankenfeld M, Kessler F, Powalla M, Rogin P 2009 Thin Solid Films. 517 2415
[9]	Liu W, Sun Y, He Q, Li F Y, Qiao Z X, Liu F F, Li C J, Tian J G 2008 Proceeding of 10th China Solar Photovoltaic Conference [C] 550-553 (in Chinese) [刘玮, 孙云, 何青, 李风岩, 乔在祥, 刘芳芳, 李长健, 田建国第十届中国太阳能光伏会议论文集. 中国, 常州, 2008年09月19日, 550—553]
[10]	Scheer R Thin Solid Films. 2011, doi:10.1016/j.tsf.2011.01.092
[11]	Han D L, Zhang G, Zhuang D M, Yuan J S, Song J 2007 Vacuum 44 30 (in Chinese) [韩东麟, 张弓, 庄大明, 元金石, 宋军, 2007 真空科学与技术学报 44 30]
[12]	Marudachalam M, Birkmire R W, Hichri H, Schultz J M, Swartzlander A, Al-Jassim M M 1997 J. Appl. Phys. 82 2896
[13]	Wada T, Kohara N, Nishiwaki S, Negami T 2001 Thin Solid Films 387 118
[14]	Assmann L, Bernéde J C, Drici A, Amory C, Halgand E, Morsli M 2005 Appl. Surf. Sci. 246 159
[15]	Wang H, Yao S D, Pan Y B, Zhang G Y 2007 Acta Phys. Sin. 56 3350 (in Chinese) [王欢, 姚淑德, 潘尧波, 张国义 2007 56 3350]
[16]	Gossla M, Shafarman W N 2005 Thin Solid Films 480-481 33
[17]	Jackson P, Würz R, Rau U, Mattheis J, Kurth M, Schlötzer T, Bilger G, Werner J H 2007 Prog. Photovolt. Res. Appl. 15 507
[18]	Dittrich H, Prinz U, Szot J, Schock H W, 1989 Proceedings of the 9th European Communities Photovoltaic Solar Energy Conference Freiburg, Fed. Rep. of Germany 25-29 September 1989 p163
[19]	Nakada T, Kunioka A 1999 Appl. Phys. Lett. 74 2444
[20]	Liao D X, Rockett A 2003 J. Appl. Phys. 93 9380
[21]	Zheng Q L, Zhuang D M, Zhang G, Li Q F 2006 Chin. J. Vac. Sci. Technol. 26 36 (in Chinese) [郑麒麟, 庄大明, 张弓, 李秋芳 2006 真空科学与技术学报 26 36]

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