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The emission of silicon quantum dots is weaker when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dot can break the passivation to form the localized electronic state in band gap to generate active center where the stronger emission occurs. In this way we can build up the radiative matter for emission. Controlling the surface bonds on silicon quantum dots, various wavelengths of emission can be obtained. The annealing is important for the treatment of the activation. Experiments demonstrate that the stimulated emissions at about 600 nm and 700 nm appear on active silicon quantum dots, and the photoluminescence peaks are found in a range from 1500 nm to 1600 nm.
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Keywords:
- Si quantum dots /
- activation for emission /
- localized states
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[2] Fauchet P M, Ruan J, Chen H, Pavesi L, Dal N L, Cazzaneli M, Elliman R G, Smith N, Smoc M, Luther-Davies B 2005 Opt. Mater. 27 745
[3] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[4] Rong H S, Liu A S, Jones R C, Cohen O, Hak D, Nicolaescu R, Fang A, Paniccia M 2005 Nature 433 292
[5] Faraci G, Gibilisco S, Pennisi A R, Franzo G, Rosa S L, Lozzi L 2008 Phys. Rev. B 78 245425
[6] Huang W Q, Zhang R T, Wang H X, Jin F, Xu L, Qin S J, Wu K Y, Liu S R, Qin C J 2008 Opt. Commun. 281 5229
[7] Huang W Q, Xu L, Wu K Y, Liu S R 2007 J. Appl. Phys. 102 053517
[8] Chen S, Qian B, Chen K J, Zhang X G, Xu J, Ma Z Y, Li W, Huang X F 2007 Appl. Phys. Lett. 90 174101
[9] Dousse A, Lanco L, Suffczynski J, Semenova E, Miard A, Lemaitre A, Sagnes I, Roblin C, Bloch J, Senellart P 2008 Phys. Rev. Lett. 101 267404
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[1] Pavesi L, Negro L D, Mazzoleni C, Franzo G, Prioto E 2000 Nature 408 440
[2] Fauchet P M, Ruan J, Chen H, Pavesi L, Dal N L, Cazzaneli M, Elliman R G, Smith N, Smoc M, Luther-Davies B 2005 Opt. Mater. 27 745
[3] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[4] Rong H S, Liu A S, Jones R C, Cohen O, Hak D, Nicolaescu R, Fang A, Paniccia M 2005 Nature 433 292
[5] Faraci G, Gibilisco S, Pennisi A R, Franzo G, Rosa S L, Lozzi L 2008 Phys. Rev. B 78 245425
[6] Huang W Q, Zhang R T, Wang H X, Jin F, Xu L, Qin S J, Wu K Y, Liu S R, Qin C J 2008 Opt. Commun. 281 5229
[7] Huang W Q, Xu L, Wu K Y, Liu S R 2007 J. Appl. Phys. 102 053517
[8] Chen S, Qian B, Chen K J, Zhang X G, Xu J, Ma Z Y, Li W, Huang X F 2007 Appl. Phys. Lett. 90 174101
[9] Dousse A, Lanco L, Suffczynski J, Semenova E, Miard A, Lemaitre A, Sagnes I, Roblin C, Bloch J, Senellart P 2008 Phys. Rev. Lett. 101 267404
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