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采用射频磁控溅射技术制备了Ge, Nb共掺杂的锐钛矿结构TiO2薄膜,详细探讨了薄膜的结构、 电阻率及光学带隙等性质随Ge, Nb掺杂量、溅射功率和热处理温度等参数的变化, 发现Ge, Nb共掺杂可以同时调节TiO2薄膜的光学带隙和电阻率. 体积分数约为6% Nb和20% Ge的共掺杂TiO2薄膜电阻率由104 Ω/cm减小至 10-1 Ω/cm,光学带隙由3.2 eV减小至1.9 eV. 退火后掺杂TiO2薄膜不仅显示更低的电阻率,还表现出更强的可见-红外光吸收. 结果表明,改变Ge, Nb的掺杂量和退火条件能够制备出电阻率和带隙都可调的TiO2薄膜.
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关键词:
- Ge-Nb-TiO2薄膜 /
- 电阻率 /
- 光学带隙 /
- 磁控溅射
Ge and Nb co-doped anatase TiO2 films are prepared by using radio frequency magnetron sputtering. The structures, resistivities and band gap properties of the films, which depend on Ge and Nb doping amounts, sputtering power and annealing temperature, are discussed. It is found that the band gap and resistivity of TiO2 film can be simultaneously tailored by co-doping with Ge and Nb. With doping volume fractions of 6% Nb and 20% Ge, the resistivity of the film can be reduced from 104 Ω/cm to 10-1 Ω/cm, and the band gap from 3.2 eV to 1.9 eV. After annealing, the Ge and Nb co-doped TiO2 film shows not only a lower resistivity but also a stronger absorption for visible and infrared light. As a result, Ge and Nb co-doped TiO2 film with adjustable band gap and resistivity can be prepared with magnetron sputtering by choosing proper Ge and Nb doping amounts and annealing conditions.-
Keywords:
- Ge-Nb-TiO2 film /
- resistivity /
- band gap /
- radio frequency magnetron sputtering
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[24] Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758
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[27] Hitosugi T, Yamada N, Nakao S, Hirose Y, Hasegawa T 2010 Phys. Status Solidi A 207 1529
[28] Khan A F, Mehmood M, Aslam M, Ismat Shah S 2010 J. Colloid Interf. Sci. 343 271
[29] Tang H, Prasad, Sanjines R, Schmid P, Levy F 1994 J. Appl. Phys. 75 2042
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[1] Bach U, Lupo D, Comte P, Moser J E, Weissörtel F, Salbeck J, Spreitzer H, Grätzel M 1998 Nature 395 583
[2] O'Hayre R, Nanu M, Schoonman J, Goossens A, Wang Q, Grätzel M 2006 Adv. Funct. Mater. 16 1566
[3] Lin H, Huang C P, Li W, Ni C, Ismat Shah S, Tseng Y H 2006 Appl. Catal. B: Environ. 68 1
[4] Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548
[5] Kurtz S R, Gordon R G 1997 Thin Solid Films 147 167
[6] Cui Y F, Yuan Z H Acta Phys. Sin. 55 5127 (in Chinese) [崔永锋, 袁志好 2006 55 5127]
[7] Bu J L, Jiang Z Y, Jiao S H 2012 Adv. Mater. Res. 415-417 2036
[8] Mwabora J M, Lindgren T, Avendano E, Jaramillo T F, Lu J, Lindquist S E, Granqvist C 2004 J. Phys. Chem. B 108 20193
[9] Umebayashi T, Yamaki T, Itoh H, Asai K 2002 Appl. Phys. Lett. 81 454
[10] Sakthivel S, Kisch H 2003 Angew. Chem. Int. Ed. 42 4908
[11] Wu X W, Wu D J, Liu X J 2010 Acta Phys. Sin. 59 4788 (in Chinese) [吴雪炜, 吴大建, 刘晓峻 2010 59 4788]
[12] Zhang Y, Tang C Q, Dai J 2005 Acta Phys. Sin. 54 323 (in Chinese) [张勇, 唐超群, 戴君 2005 54 323]
[13] Chatterjee S, Goyal A, Ismat Shah S 2006 Mater. Lett. 60 3541
[14] Chatterjee S 2008 Solar Energy 82 95
[15] Gai Y Q, Li J B, Li S S, Xia J B, Wei S H 2009 Phys. Rev. Lett. 102 36402
[16] Zhang X J, Gao P, Liu Q J 2010 Acta Phys. Sin. 59 4930 (in Chinese) [张学军, 高攀, 柳清菊 2010 59 4930]
[17] Luo H, Takata T, Lee Y, Zhao J F, Domen K, Yan Y S 2004 Chem. Mater. 16 846
[18] Furubayashi Y, Hitosugi T, Yamamoto Y, Inana K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101
[19] Hitosugi T, Yamada N, Nakao S, Kirose Y, hasegawa T 2010 Phys. Status Solidi A 207 1529
[20] Liu G A, Yang G J, Zheng F S 2007 Chin. J. Vacuum Sci. Technol. 27 254 (in Chinese) [刘贵昴, 杨贵进, 郑妃盛 2007 真空科学与技术学报 27 254]
[21] Ghosh T B, Dhabal S, Datta A K 2003 J. Appl. Phys. 94 4577
[22] Guo M L, Zhang X D, Liang C T 2011 Physica B: Condensed Matter 406 3354
[23] Tang H, Prasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 1994
[24] Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758
[25] Hitosugi T, Kamisaka H, Yamashita K, Nogawa H, Furubayashi Y, Nakao S, Yamada N, Chikamatsu A, Kumigashira H, Oshima M, Hirose Y, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 111203
[26] Hamberg I, Granqvist C G 1986 J. Appl. Phys. 60 123
[27] Hitosugi T, Yamada N, Nakao S, Hirose Y, Hasegawa T 2010 Phys. Status Solidi A 207 1529
[28] Khan A F, Mehmood M, Aslam M, Ismat Shah S 2010 J. Colloid Interf. Sci. 343 271
[29] Tang H, Prasad, Sanjines R, Schmid P, Levy F 1994 J. Appl. Phys. 75 2042
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