退火温度对N+注入ZnO:Mn薄膜结构及室温铁磁性的影响

杨天勇; 孔春阳; 阮海波; 秦国平; 李万俊; 梁薇薇; 孟祥丹; 赵永红; 方亮; 崔玉亭

doi:10.7498/aps.61.168101

摘要

采用射频磁控溅射法在石英玻璃衬底上制备了ZnO:Mn薄膜, 结合N+ 注入获得Mn-N共掺ZnO薄膜, 进而研究了退火温度对其结构及室温铁磁性的影响. 结果表明, 退火后ZnO:(Mn, N) 薄膜中Mn2+和N3-均处于ZnO晶格位, 没有杂质相生成. 退火温度的升高有助于修复N+注入引起的晶格损伤, 同时也会让N逸出薄膜, 导致受主(NO)浓度降低. 室温铁磁性存在于ZnO:(Mn, N)薄膜中, 其强弱受NO浓度的影响, 铁磁性起源可采用束缚磁极化子模型进行解释.

关键词:

Abstract

The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, and the N3- may escape from the film, which results in the reducing of acceptor (NO) concentration. Ferromagnetism is observed in the (Mn,N)-codoped ZnO thin film at 300 K and found to be the sensitive to the acceptor concentration. The mechanism of room-temperature ferromagnetism in the ZnO:(Mn, N) is discussed based on the bound magnetic polaron model.

Keywords:

作者及机构信息

1.
重庆市光电功能材料重点实验室, 重庆 400047;

2.
重庆大学物理学院, 重庆 400030

基金项目: 重庆市自然科学基金(批准号: CSTC. 2011BA4031)资助的课题.

Authors and contacts

1.
Key Laboratory of Optoelectronic Functional Materials of Chongqing, Chongqing 400047, China;

2.
College of Physics, Chongqing University, Chongqing 400030, China

Funds: Project supported by the Natural Science Foundation of Chongqing, China (Grant No. CSTC. 2011BA4031).

参考文献

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施引文献

[1]	Look D C 2001 Mater. Sci. Eng. B 80 383
[2]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[3]	Dietl T, Ohno H, Matsukura F, Clibert J, Ferrand D 2000 Science 287 1019
[4]	Souza T M, Cunha Lima da I C, Boselli M A 2008 Appl. Phys. Lett. 92 152511
[5]	Zhao L, Lu P F, Yu Z Y, Guo X T, Shen Y, Ye H, Yuan G F, Zhang L 2010 J. Appl. Phys. 108 113924
[6]	Zou C W, Wang H J, Yi M L, Li M, Liu C S, Guo L P, Fu D J, Kang T W 2010 Appl. Surf. Sci. 256 2453
[7]	Qiu D J, Wang J, Ding K B, Shi H J, Jia Y 2008 Acta Phys. Sin. 57 5249 (in Chinese) [邱东江, 王俊, 丁扣宝, 施红军, 郏寅 2008 57 5249]
[8]	Lu Z L, Yan G Q, Wang S, Zou W Q, Mo Z R, Lü L Y, Zhang F M, Du Y W, Xu M X, Xia Z H 2008 J. Appl. Phys. 104 033919
[9]	Yang Z, Liu J L, Biasini M, Beyermann W P 2008 Appl. Phys. Lett. 92 042111
[10]	Yan H L, Zhong X L, Wang J B, Huang G J, Ding S L, Zhou G C, Zhou Y C 2007 Appl. Phys. Lett. 90 082503
[11]	Xu Q Y, Schmidt H, Hartmann L, Hochmuth H, Lorenz M, Setzer A, Esquinazi P, Meinecke C, Grundmann M 2007 Appl. Phys. Lett. 91 092503
[12]	Wang Q, Sun Q, Jena P, Kawazoe K 2004 Phys. Rev. B 70 052408
[13]	Zou W Q, Lu Z L, Wang S, Liu Y, Lu L, Li L, Zhang F M, Dou Y W 2009 Acta Phys. Sin. 58 5763 (in Chinese) [邹文琴, 路忠林, 王申, 刘圆, 陆路, 郦莉, 张凤鸣, 都有为 2009 58 5763]
[14]	Xu H Y, Liu Y C, Xu C S, Liu Y X, Shao C L 2006 Appl. Phys. Lett. 88 242502
[15]	Peng L P, Fang L, Yang X F, Li Y J, Huang Q L, Wu F, Kong C Y 2009 J. Alloys Compd. 484 576
[16]	Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213
[17]	Asmar A R, Atanas J P, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol J L, Jabbour J, Juillaget S, Foucaran A 2005 J. Cryst. Growth 279 399
[18]	Kaschner A, Haboeck U, Martin S, Matthias S, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner Z, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909
[19]	Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903
[20]	Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913
[21]	Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[22]	Wang J B, Huang G J, Zhong X L, Sun L Z, Zhou T C, Liu E H 2006 Appl. Phys. Lett. 88 252502
[23]	Yadav H K, Sreenivas K, Katiyar R S, Gupta V 2007 J. Appl. D: Appl. Phys. 40 6005
[24]	Hu Y M, Wang C Y, Lee S S, Han T C, Chou W Y, Chen G J 2011 J. Raman Spectrosc. 42 434
[25]	He Q B, Xu J Y, Li X H, Kamzin A, Kamzina L 2007 Chin. Phys. Lett. 24 3500
[26]	Cong C J, Liao L, Liu Q Y, Li J C, Zhang K L 2006 Nanotechnology 17 1520
[27]	Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang R, Zheng Y D 2009 Appl. Phys. Lett. 95 192106
[28]	Yang H J, Zhao L Y, Zhang Y J, Wang Y X, Liu H L, Wei M B 2007 Solid State Commun. 143 566

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