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如何提高硅基薄膜太阳电池的光稳定性是硅基薄膜太阳电池研究和产业化过程中非常重要的问题. 为了提高非晶硅/微晶硅叠层电池的光稳定性, 本文首先给出了良好光稳定性非晶硅顶电池的结果, 然后重点研究了N/P隧穿结和微晶硅底电池本征层硅烷浓度梯度对叠层电池光稳定性的影响. 经过初步优化, 连续光照1000 h后非晶硅/微晶硅叠层电池的最小光致衰退率只有7%.
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关键词:
- 光致稳定性 /
- 非晶硅/微晶硅叠层太阳电池 /
- 硅烷浓度梯度 /
- 隧穿结
Improving the light-soaking stability of silicon-based thin film solar cells is a very important issue for industrial production. In order to obtain high-efficiency a-Si:H/μc-Si:H tandem solar cells with good light-soaking stability, In this paper we first present the results about a-Si:H top solar cell with high light-soaking stability. Then we mainly investigate the influences of N/P tunnel junction and silane concentration (SC) profiling of μc-Si:H i-layer on the light-soaking stability of a-Si:H/μc-Si:H tandem solar cells. Up to now we have been able to obtain a-Si:H/μc-Si:H tandem solar cell with a light-soaking degradation ratio of only 7%.-
Keywords:
- light-soaking stability /
- a-Si:H/μc-Si:H tandem solar cell /
- silane concentration profiling /
- N/P tunnel junction
[1] Staebler D L, Wronski C R 1977 Appl. Phys. Lett. 31 292
[2] Finger F, Carius R, Dylla T, Klein S, Okur S, Günes M 2005 Journal of Optoelectronics and Advanced Materials 7 83
[3] Wang Y 2007 Ph. D. Dissertation (Tianjin: Nankai University) (in Chinese) [王岩 2007 博士学位论文 (天津: 南开大学)]
[4] Yan B J, Yue G Z, Yang J, Banerjee A, Guha S 2003 Mat. Res. Soc. Symp. Proc. 762 A4.1.1
[5] Xue J M, Ren H Z, Sun J, Guo Q C, Wang Y, Zhang D K, Han X Y, Hou G F, Geng X H 2005 Proceedings of the 15th International Photovoltaic Science & Engineering Conference (PVSEC-15) Shanghai China, Oct 11-14, 2005 p646
[6] Wang Y, Han X Y, Ren H Z, Hou G F, Guo Q C, Zhu F, Zhang D K, Sun J, Xue J M, Zhao Y, Geng X H 2006 Acta Phys. Sin. 55 947 (in Chinese) 王岩, 韩晓艳, 任慧志, 侯国付, 郭群超, 朱锋, 张德坤, 孙建, 薛俊明, 赵颖, 耿新华 2006 55 947
[7] Li G J, Hou G F, Han X Y, Yuan Y J, Wei C C, Sun J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 1674
[8] Yan B J, Yue G Z, Yang J, Gu H S, Williamson D L, Han D X, Jiang C S 2004 Appl. Phys. Lett. 85 1955
[9] Yue Guo Z, Yan B J, Ganguly G, Yang J, Gu H S, Teplin C W 2006 Appl. Phys. Lett. 88 263507
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[1] Staebler D L, Wronski C R 1977 Appl. Phys. Lett. 31 292
[2] Finger F, Carius R, Dylla T, Klein S, Okur S, Günes M 2005 Journal of Optoelectronics and Advanced Materials 7 83
[3] Wang Y 2007 Ph. D. Dissertation (Tianjin: Nankai University) (in Chinese) [王岩 2007 博士学位论文 (天津: 南开大学)]
[4] Yan B J, Yue G Z, Yang J, Banerjee A, Guha S 2003 Mat. Res. Soc. Symp. Proc. 762 A4.1.1
[5] Xue J M, Ren H Z, Sun J, Guo Q C, Wang Y, Zhang D K, Han X Y, Hou G F, Geng X H 2005 Proceedings of the 15th International Photovoltaic Science & Engineering Conference (PVSEC-15) Shanghai China, Oct 11-14, 2005 p646
[6] Wang Y, Han X Y, Ren H Z, Hou G F, Guo Q C, Zhu F, Zhang D K, Sun J, Xue J M, Zhao Y, Geng X H 2006 Acta Phys. Sin. 55 947 (in Chinese) 王岩, 韩晓艳, 任慧志, 侯国付, 郭群超, 朱锋, 张德坤, 孙建, 薛俊明, 赵颖, 耿新华 2006 55 947
[7] Li G J, Hou G F, Han X Y, Yuan Y J, Wei C C, Sun J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 1674
[8] Yan B J, Yue G Z, Yang J, Gu H S, Williamson D L, Han D X, Jiang C S 2004 Appl. Phys. Lett. 85 1955
[9] Yue Guo Z, Yan B J, Ganguly G, Yang J, Gu H S, Teplin C W 2006 Appl. Phys. Lett. 88 263507
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