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制备了基于三(8-羟基喹啉)铝(tris-(8-hydroxyquinoline) aluminum (III), Alq3) 的有机发光二极管, 并在不同偏压下测量了器件的室温磁电导效应.在小偏压下, 发光器件展示出明显的负磁电导效应.偏压增加后, 磁电导由负值变为正值, 出现了正负转变的现象. N, N'-二苯基-N, N'-(1-萘基)-1, 1'-联苯-4, 4'-二胺(N, N'-Di(naphthalen-1-yl)-N, N' diphenyl-benzidine, NPB) 与铜酞菁 (Copper phthalocyanine, CuPc) 单极器件磁电导的测量结果表明, 发光器件在小偏压下的负磁电导效应来源于器件中的CuPc层. 双极电流的磁电导效应可用电子-空穴对模型进行解释, 而单极电流的磁电导效应可归因于器件中的极化子-双极化子转变. 在注入电流的变化过程中, 发光器件的正负磁电导转变是两种机理共同作用的结果.Organic light-emitting diode (OLED) based on tris-(8-hydroxyquinoline) aluminum(III) (Alq3) is fabricated, and its magnetoconductance (MC) effects are measured at different bias voltages. When the bias voltage is small, the OLED exhibits apparently a negative MC effect. After the bias voltage is increased, the MC value changes from negative to positive, displaying a negative-positive inversion. The MC effects in N, N'-Di(naphthalen-1-yl)-N, N' diphenyl-benzidine (NPB) and Copper phthalocyanine (CuPc) unipolar devices show that the negative MC effect in OLED comes from the CuPc layer in device. The MC effect of bipolar current can be explained using the electron-hole pair model. The MC effect of unipolar current can be attributed to the polaron-bipolaron transition in device. The positive-negative MC inversion in OLED results from the simultaneous contributions of the above two mechanisms during the variation of the injection current.
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Keywords:
- organic light-emitting diode /
- magnetoconductance /
- bipolaron /
- electron-hole pair
[1] Kalinowski J, Cocchi M, Virgili D, Di Marco P, Fattori V 2003 Chem. Phys. Lett. 380 710
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[14] Jiang W L, Meng Z H, Cong L, Wang J, Wang L Z, Han Q, Meng F C, Gao Y H 2010 Acta Phys. Sin. 59 6642 (in Chinese) [姜文龙, 孟昭辉, 从林, 汪津, 王立忠, 韩强, 孟凡超, 高永慧 2010 59 6642]
[15] Ding B F, Yao Y, Sun Z Y, Wu C Q, Gao X D, Wang Z J, Ding X M, Choy W C H, Hou X Y 2010 Appl. Phys. Lett. 97 163302
[16] Gómez J A, Nüesch F, Zuppiroli L, Graeff C F O 2010 Synth. Met. 160 317
[17] Peng Q M, Sun J X, Li X J, Li M L, Li F 2011 Appl. Phys. Lett. 99 033509
[18] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801
[19] Schellekens A J, Wagemans W, Kersten S P, Bobbert P A, Koopmans B 2011 Phys. Rev. B 84 075204
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[1] Kalinowski J, Cocchi M, Virgili D, Di Marco P, Fattori V 2003 Chem. Phys. Lett. 380 710
[2] Kalinowski J, Cocchi M, Virgili D, Fattori V, Di Marco P 2004 Phys. Rev. B 70 205303
[3] Mermer Ö, Veeraraghavan G, Francis T L, Wohlgenannt M 2005 Solid State Commun. 134 631
[4] Sheng Y, Nguyen T D, Veeraraghava G, Mermer Ö, Wohlgenannt M, Qiu S, Scherf U 2006 Phys. Rev. B 74 045213
[5] Hu B, Wu Y 2007 Nature Mater. 6 985
[6] Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J. Appl. Phys. 102 073710
[7] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201
[8] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2008 Appl. Phys. Lett. 93 263302
[9] Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201
[10] Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209
[11] Xin L Y, Li C N, Li F, Liu S Y, Hu B 2009 Appl. Phys. Lett. 95 123306
[12] Bagnich S A, Niedermeier U, Melzer C, Sarfert W, von Seggern H 2009 Appl. Phys. Lett. 106 113702
[13] Zhang Y, Liu R, Lei Y L, Cheng P, Zhang Q M, Xiong Z H 2010 Acta Phys. Sin. 59 5817 (in Chinese) [张勇, 刘荣, 雷衍连, 陈平, 张巧明, 熊祖洪 2010 59 5817]
[14] Jiang W L, Meng Z H, Cong L, Wang J, Wang L Z, Han Q, Meng F C, Gao Y H 2010 Acta Phys. Sin. 59 6642 (in Chinese) [姜文龙, 孟昭辉, 从林, 汪津, 王立忠, 韩强, 孟凡超, 高永慧 2010 59 6642]
[15] Ding B F, Yao Y, Sun Z Y, Wu C Q, Gao X D, Wang Z J, Ding X M, Choy W C H, Hou X Y 2010 Appl. Phys. Lett. 97 163302
[16] Gómez J A, Nüesch F, Zuppiroli L, Graeff C F O 2010 Synth. Met. 160 317
[17] Peng Q M, Sun J X, Li X J, Li M L, Li F 2011 Appl. Phys. Lett. 99 033509
[18] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801
[19] Schellekens A J, Wagemans W, Kersten S P, Bobbert P A, Koopmans B 2011 Phys. Rev. B 84 075204
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