基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管潜在缺陷退化模型

孙鹏; 杜磊; 陈文豪; 何亮

doi:10.7498/aps.61.067801

摘要

基于金属-氧化物-半导体-场效应管(MOSFET)辐射损伤的微观机理,推导出了MOSFET经历辐照之后氧化层空穴俘获与阈值电压漂移之间关系的表达式.又根据MOSFET中1/f噪声产生的微观机理,建立了辐照之前MOSFET的1/f噪声功率谱幅值与阈值电压漂移量之间的定量关系,并通过实验予以验证.结果表明,辐照之前的1/f噪声功率谱幅值与辐照之后的阈值电压漂移量存在正比例关系,阈值电压漂移量可以反映出MOSFET内部的潜在缺陷的退化程度,因此,该模型有助于利用1/f噪声参量来表征MOSFET内部潜在缺陷的数量和严重程度.

关键词:

Abstract

Based on metal-oxide-semiconductor field effect transistor (MOSFET) microscopic mechanism of radiation damage, a relation between radiation induced increase in number of oxide hole-traps and post-irradiation threshold voltage drift is proposed. Then, Based on MOSFET microscopic mechanism of1/f noise generation, a quantitative relationship between pre-irradiation1/f noise power spectral amplitude and post-irradiation threshold voltage drift is founded, which accords well with the experimental results. This relationship shows that pre-irradiation1/f noise power spectral amplitude is proportional to post-irradiation threshold voltage drift, which can reflect the degradation of latent defect in MOSFET. So, this modal is helpful to characterize the quantity and severity of latent defect in MOSFET by using1/f noise parameters.

Keywords:

作者及机构信息

1.
西安电子科技大学技术物理学院, 西安 710071

通信作者: 孙鹏, stevesun517@gmail.com

基金项目: 国家自然科学基金(批准号: 60276028)资助的课题.

Authors and contacts

1.
School of Technical Physics, Xidian University, Xi’an 710071, China

Corresponding author: Sun Peng, stevesun517@gmail.com

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60276028)

参考文献

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施引文献

[1]	Ma T P, Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Device and Circuits (New York: A Wiley-Interscience Pub-lication John Wiley Sons)
[2]
[3]	Fleetwood D M, Meisenheimer T L, Scofield J H 1994 IEEE Trans. Electron. Dev. 41 1953
[4]
[5]	Scofield J H, Fleetwood D M 1991 IEEE Trans. Nucl. Sci. 38 1567
[6]	Fleetwood D M, Scofield J H 1990 Phys. Rev. Lett. 64 579
[7]
[8]
[9]	Jindal R P 2006 IEEE Trans. Electron Dev. 53 2051
[10]
[11]	Mete E, Tian X, Clark W F 2007 IEEE Electron Dev. Lett. 28 812
[12]
[13]	Shaposhnikov A V, Gritsenko V A, Zhidomirov G M, Roger M 2002 Phys. Sol. State 44 1028
[14]
[15]	Fleetwood D M, Winokur P S, Reber R A, Meisenheimer T L, Schwank J R, Shaneyfelt M R, Riewe L C 1993 Appl. Phys. Lett. 73 5058
[16]
[17]	Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 56 3400]
[18]
[19]	Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2004 IEEE Trans. Nucl. Sci. 51 3158
[20]
[21]	Zhung Y Q and Sun Q 1993 Noise and its Minimizing Technol-ogy in Semiconductor Devices (Beijing:National Defence Indus-try Press) pp172221 (in Chinese) [庄奕琪, 孙青 1993 半导体器件中的噪声及其低噪声化技术(北京:国防工业出版社)第l72---221页]
[22]
[23]	Bao J L, Zhuang Y Q, Du L 2005 Acta Phys. Sin. 54 2118 (in Chinese) [包军林, 庄奕琪, 杜磊 2005 54 2118]
[24]
[25]	Zhuang Y Q and Sun Q 1991 IEEE Trans. on Electron Dev. 38 2540
[26]	Hung K K, Ping K K, Hu C 1990 IEEE Trans. Electron. Dev. 37 654
[27]
[28]	Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[29]
[30]
[31]	Scofield J H, Doerr T P, Fleetwood D M 1989 IEEE Trans. Nucl. Sci. 36 1946
[32]
[33]	Zhang T Q, Liu C Y, Liu J L 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐 2001 50 2434]

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