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基于化学气相淀积(CVD)的Grove理论和Fick第一定律,提出并建立了锗硅(SiGe)/硅(Si)异质结材料减压化学气相淀积(RPCVD)生长动力学模型.与以前锗硅/硅异质结材料生长动力学模型仅考虑表面反应控制不同,本模型同时考虑了表面反应和气相传输两种控制机理,并给出了两种控制机理极限情况下的模型.本模型不仅适用于低温锗硅/硅应变异质结材料生长的表征,也适用于表征高温锗硅/硅弛豫异质结材料生长的表征.将模型计算值与实验结果进行了对比,无论是625℃低温下的应变SiGe的生长,还是900℃高温下的弛豫
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关键词:
- SiGe/Si异质结材料 /
- 化学气相淀积生长动力学模型 /
- Grove理论 /
- Fick第一定律
Based on Grove model of CVD(chemical vapor deposition) and Fick’s first law, we propose and build the RPCVD(reduced pressure chemical vapor deposition) growth kinetics model of GeSi/Si heterojunction materials. Different from previous SiGe/Si kinetics model, which only considers surface reaction controlling mechanism, our model simultaneously considers two controlling mechanisms: surface reaction and vapor transport. We also consider the model at these two controlling mechanism limits. This model is suitable for charactering the growth of both strained GeSi/Si heterojunction materials at low temperatures and relaxed GeSi/Si heterojunction materials at high temperatures. The calculated value of the model is compared with experimental results. Whether for the growth of strained SiGe at low temperature of 625 ℃, or for the growth of relaxed SiGe at high temperature of 900 ℃, the model error are both lower than 10%, which is the subject technical target.-
Keywords:
- SiGe/Si heterojunction materials /
- chemical vapor deposition growth kinetics model /
- Grove model /
- Fick’s first law
[1] Dai X Y, Hao D Y, Zhang H M, Hu H Y, Lü Y 2004 J. Xidian Univ. 31 338 (in Chinese)[戴显英、郝冬艳、张鹤鸣、湖辉勇、吕 懿 2004 西安电子科技大学学报 31 338]
[2] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[3] Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439
[4] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Ying 2006 Chin. Phys. 15 1339
[5] Wen S T, Zhang H W, Zhang L W, Chen G R, Lu J X 2010 Acta Phys. Sin. 59 491 (in Chinese)[文书堂、张红卫、张丽伟、陈改荣、卢景霄 2010 59 4901]
[6] Jang S M, Reif R 1991 Appl. Phys. Lett. 59 3162
[7] Russell N M, Breiland W G 1993 J. Appl. Phys. 73 3525
[8] Kamins T I, Meyer D J 1991 Appl. Phys. Letts. 59 178
[9] Jin X J, Liang J W 1996 Acta Electron. Sin. 24 7 (in Chinese) [金晓军、梁骏吾 1996 电子学报 24 7]
[10] Wang Y Y, Guan X D, Ma J R 1989 Fundamental of Integrated Civcuit Process p256(in Chinese)[王阳元、关旭东、马俊如 1989 集成电路工艺基础 (北京:北京大学出版社) 第256页]
[11] Grove A S 1966 Industr. Eng. Chem. 58 48
[12] Gates S M, Kulkarni S K 1991 Appl. Phys. Lett. 58 2963
[13] Fitch J T 1994 J. Electrochem. Sci. 141 1046
[14] Kongetira P, Neudeck G, Takoudis C G 1997 J. Vac. Sci. Technol. B 15 1902
[15] Yu Z, Li D Z, Cheng B W 2000 Chin. J. Semicond. 21 564 (in Chinese)[于 卓、李代宗、成步文 2000 半导体学报 21 564]
[16] Robbins D J, Glasper J L, Cullis A G 1991 Appl. Phys. 69 3729
[17] Ye Z Z, Lü J G, Lü B 2008 Semicondnctor Film Technigue and Physics p81 (in Chinese)[叶志镇、吕建国、吕 斌 2008 半导体薄膜技术与物理 (杭州:浙江大学出版社)第81页]
[18] Hartmann J M 2007 J. Cryst. Growth 305 113
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[1] Dai X Y, Hao D Y, Zhang H M, Hu H Y, Lü Y 2004 J. Xidian Univ. 31 338 (in Chinese)[戴显英、郝冬艳、张鹤鸣、湖辉勇、吕 懿 2004 西安电子科技大学学报 31 338]
[2] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[3] Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439
[4] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Ying 2006 Chin. Phys. 15 1339
[5] Wen S T, Zhang H W, Zhang L W, Chen G R, Lu J X 2010 Acta Phys. Sin. 59 491 (in Chinese)[文书堂、张红卫、张丽伟、陈改荣、卢景霄 2010 59 4901]
[6] Jang S M, Reif R 1991 Appl. Phys. Lett. 59 3162
[7] Russell N M, Breiland W G 1993 J. Appl. Phys. 73 3525
[8] Kamins T I, Meyer D J 1991 Appl. Phys. Letts. 59 178
[9] Jin X J, Liang J W 1996 Acta Electron. Sin. 24 7 (in Chinese) [金晓军、梁骏吾 1996 电子学报 24 7]
[10] Wang Y Y, Guan X D, Ma J R 1989 Fundamental of Integrated Civcuit Process p256(in Chinese)[王阳元、关旭东、马俊如 1989 集成电路工艺基础 (北京:北京大学出版社) 第256页]
[11] Grove A S 1966 Industr. Eng. Chem. 58 48
[12] Gates S M, Kulkarni S K 1991 Appl. Phys. Lett. 58 2963
[13] Fitch J T 1994 J. Electrochem. Sci. 141 1046
[14] Kongetira P, Neudeck G, Takoudis C G 1997 J. Vac. Sci. Technol. B 15 1902
[15] Yu Z, Li D Z, Cheng B W 2000 Chin. J. Semicond. 21 564 (in Chinese)[于 卓、李代宗、成步文 2000 半导体学报 21 564]
[16] Robbins D J, Glasper J L, Cullis A G 1991 Appl. Phys. 69 3729
[17] Ye Z Z, Lü J G, Lü B 2008 Semicondnctor Film Technigue and Physics p81 (in Chinese)[叶志镇、吕建国、吕 斌 2008 半导体薄膜技术与物理 (杭州:浙江大学出版社)第81页]
[18] Hartmann J M 2007 J. Cryst. Growth 305 113
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