电子器件散粒噪声测试方法研究

陈文豪; 杜磊; 庄奕琪; 包军林; 何亮; 陈华; 孙鹏; 王婷岚

doi:10.7498/aps.60.050704

摘要

本文分析了超导量子干涉器(SQUID)和超导-绝缘-超导(SIS)约瑟夫森结散粒噪声测试方法的应用局限性,提出了常规器件的散粒噪声测试方案.针对常规电子器件散粒噪声特性,研究了噪声测试基本条件,并建立了低温测试系统.通过采用双层屏蔽结构和超低噪声前置放大器,实现了较好的电磁干扰屏蔽和极低的背景噪声.在10 K温度下对常规二极管散粒噪声进行了测试,通过理论和测试结果对比分析,验证了测试系统的准确和可信性.

关键词:

Abstract

The limitations to shot noise measurement methods based on superconducting quantum interference device (SQUID) and superconductivity-insulation-superconductor (SIS) Josephson junction are pointed out, and a method to measure the shot noises of conventional electronic devices is proposed. Shot noise characteristics of conventional electronic devices are analyzed, and then a low-temperature measurement system is established. By using a double-shielding construction and low noise preamplifier, the test system can achieve a good electromagnetic interference shielding and low background noise. The theoretical and the experimental results of shot noises in diodes at 10 K are in good agreement with each other. The accuracy and the credibility of measurement system are proved.

Keywords:

PACS:

作者及机构信息

(1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子学院,西安 710071

基金项目: 国家重点基础研究发展计划(973计划)(批准号:2010CB631002)资助的课题.

Authors and contacts

(1)School of Microelectronic , Xidian University , Xi’an 710071, China; (2)School of Technology Physics , Xidian University , Xi’an 710071, China

参考文献

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[10]	Obrecht M S,Abou-Allam E,Manku T 2002 Electron Devices, IEEE Transactions on 49 524
[11]	Yan C,Guofu N,Rezvani A,Taylor S S 2008 Silicon Monolithic Integrated Circuits in RF Systems 2008. SiRF 2008. IEEE Topical Meeting on, Orlando, Jan. 23—25, 2008,118
[12]	Chen C,Deen M 2002 Electron Devices, IEEE Transactions on 49 1484
[13]	Klein P 2002 Electron Device Letters, IEEE 20 399
[14]	Navid R,Dutton R 2002 Simulation of Semiconductor Processes and Devices, 2002 SISPAD 2002. International Conference on, Kobe, Japan, Sept 4—6, 2002, 75
[15]	Navid R,Jungemann C,Lee T,Dutton R 2007 J. Appl. Phys. 101 124501
[16]	Jeon J,Lee J,Kim J,Park C H,Lee H,Oh H,Kang H K,Park B G,Shin H 2009 VLSI Technology, 2009 Symposium on, Kyoto, Japan, June 16—18, 2009,48
[17]	Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Rev. Sci. Instrum. 70 2711
[18]	Onac E,Balestro F,Trauzettel B,Lodewijk C F,Kouwenhoven L P 2006 Phys. Rev. Lett. 96 026803
[19]	Steinbach A H,Martinis J M,Devoret M H 1996 Phys. Rev. Lett. 76 3806
[20]	Pralgauskaite S,Palenskis V,Matukas J,Petrulis J,KurilCik G 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66001H
[21]	Pralgauskait S,Palenskis V,Matukas J,Vizbaras A 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66000L
[22]	Gomila G,Pennetta C,Reggiani L,Sampietro M,Ferrari G,Bertuccio G 2004 Phys. Rev. Lett. 92 226601
[23]	Charalambous C D,Menemenlis N 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,2246
[24]	Charalambous C D,Menemenlis N,Kabranov O H,Makrakis D 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,1011
[25]	Nagaev K E 1995 Phys. Rev. B 52 4740
[26]	Kozub V V,Rudin A M 1995 Phys. Rev. B 52 7853
[27]	Vandamme L 2005 Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices 189
[28]	Cowley A M,Zettler R A 1968 Electron Devices, IEEE Transactions on 15 761
[29]	Montgomery H C,Clark M A 1953 Journal of Applied Physics 24 1337
[30]	Gomila G,Reggiani L,Rub X M J 2000 Journal of Applied Physics 88 3079

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